Effects of polymer residue on the pull-in of suspended graphene

Ng, Jimmy; Jones, Talmage; Martínez-Velis, I.; Wang, Albert; Hopkins, Jonathan B.; Xie, Ya‐Hong

doi:10.1116/1.5126439

Cited by 2 publications

(1 citation statement)

References 41 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The gNEMS prototypes were initially designed and fabricated using poly-crystalline graphene ribbons including varying design dimensions [11,18]. Figure 9 depicts the DCmeasured I-V characteristics for sample gNEMS devices with varying graphene ribbon lengths of L = 7 µm, 10 µm, 15 µm, and 20 µm, respectively.…”

Section: Experiments Results For Poly-crystalline Gnemsmentioning

confidence: 99%

Graphene-Based ESD Protection for Future ICs

Pan

Hao

et al. 2023

Nanomaterials

Self Cite

View full text Add to dashboard Cite

On-chip electrostatic discharge (ESD) protection is required for all integrated circuits (ICs). Conventional on-chip ESD protection relies on in-Si PN junction-based device structures for ESD. However, such in-Si PN-based ESD protection solutions pose significant challenges related to ESD protection design overhead, including parasitic capacitance, leakage current, and noises, as well as large chip area consumption and difficulty in IC layout floor planning. The design overhead effects of ESD protection devices are becoming unacceptable to modern ICs as IC technologies continuously advance, which is an emerging design-for-reliability challenge for advanced ICs. In this paper, we review the concept development of disruptive graphene-based on-chip ESD protection comprising a novel graphene nanoelectromechanical system (gNEMS) ESD switch and graphene ESD interconnects. This review discusses the simulation, design, and measurements of the gNEMS ESD protection structures and graphene ESD protection interconnects. The review aims to inspire non-traditional thinking for future on-chip ESD protection.

show abstract

Section: Experiments Results For Poly-crystalline Gnemsmentioning

confidence: 99%

Graphene-Based ESD Protection for Future ICs

Pan

Hao

et al. 2023

Nanomaterials

Self Cite

View full text Add to dashboard Cite

show abstract

Charged particle dynamics and distribution functions in low pressure dual-frequency capacitively coupled plasmas operated at low frequencies and high voltages

Hartmann

Wang

Nösges

et al. 2020

Plasma Sources Sci. Technol.

View full text Add to dashboard Cite

In high aspect ratio (HAR) dielectric plasma etching, dual-frequency capacitively coupled radio-frequency plasmas operated at low pressures of 1 Pa or less are used. Such plasma sources are often driven by a voltage waveform that includes a low-frequency component in the range of hundreds of kHz with a voltage amplitude of 10 kV and more to generate highly energetic vertical ion bombardment at the wafer. In such discharges, the energetic positive ions can overcome the repelling potential created by positive wall charges inside the etch features, which allows high aspect ratios to be reached. In order to increase the plasma density a high-frequency driving component at several 10 MHz is typically applied simultaneously. Under such discharge conditions, the boundary surfaces are bombarded by extremely energetic particles, of which the consequences are poorly understood. We investigate the charged particle dynamics and distribution functions in this strongly non-local regime in argon discharges by particle-in-cell simulations. By including a complex implementation of plasma-surface interactions, electron induced secondary electron emission (δ-electrons) is found to have a strong effect on the ionization dynamics and the plasma density. Due to the high ion energies at the electrodes, very high yields of the ion induced secondary electron emission (γ-electrons) are found. However, unlike in classical capacitive plasmas, these γ-electrons do not cause significant ionization directly, since upon acceleration in the high voltage sheaths, these electrons are too energetic to ionize the neutral gas efficiently. These γand δ-electrons as well as electrons created in the plasma bulk and accelerated 8 Author to whom any correspondence should be addressed.

show abstract

Effects of polymer residue on the pull-in of suspended graphene

Cited by 2 publications

References 41 publications

Graphene-Based ESD Protection for Future ICs

Graphene-Based ESD Protection for Future ICs

Charged particle dynamics and distribution functions in low pressure dual-frequency capacitively coupled plasmas operated at low frequencies and high voltages

Contact Info

Product

Resources

About