Effects of polishing parameters on surface quality in sapphire double-sided CMP

Li, Zhongyang; Deng, Zhaohui; Hu, Yangxuan

doi:10.1016/j.ceramint.2020.02.116

Cited by 37 publications

(11 citation statements)

References 23 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…There are many factors that affect the polishing performance in CMP, such as abrasives, , additives, working parameters (pressure, temperature, etc. ), , polishing pads, , and so forth. However, most current strategies encounter the problem of the interactions between the abrasives and the polished material .…”

Section: Introductionmentioning

confidence: 99%

Enhancing the Polishing Efficiency of CeO₂ Abrasives on the SiO₂ Substrates by Improving the Ce³⁺ Concentration on Their Surface

Luo

et al. 2022

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

The polishing activity of CeO 2 abrasives is enhanced by improving the Ce 3+ concentration on their surface. In this study, a series of Ce 1−x La x O 2 abrasives with different La 3+ doping were prepared. The abrasives were characterized by X-ray diffraction, scanning electron microscopy, transmission electron microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy. The effects of La 3+ doping on the morphology, size, and Ce 3+ concentration of the abrasives were studied. The morphology of the particles changes from sphere to octahedron with the La 3+ doping. The lattice expansion of the CeO 2 crystal after La 3+ doping also significantly improves the Ce 3+ concentration on the abrasive surface. However, the Ce 3+ concentration on the surface gradually became saturated when the x was 0.2 or more. The polishing performance proved that the material removal rate (MRR) is closely related to the Ce 3+ concentration generated by La 3+ doping. The MRR of pure CeO 2 abrasives with a Ce 3+ concentration of 20.53% on a SiO 2 substrate is 59.31 nm/min, while the Ce 0.7 La 0.3 O 2 abrasives with the Ce 3+ concentration increased to 34.41% achieved 101.12 nm/min. The polished surface quality was characterized by atomic force microscopy, which shows improved roughness of all samples. Furthermore, the differences in the removal rate of Ce 3+ and Ce 4+ in CeO 2 -based abrasives on the SiO 2 substrate were also discussed.

show abstract

Section: Introductionmentioning

confidence: 99%

Enhancing the Polishing Efficiency of CeO₂ Abrasives on the SiO₂ Substrates by Improving the Ce³⁺ Concentration on Their Surface

Luo

et al. 2022

ACS Appl. Electron. Mater.

View full text Add to dashboard Cite

show abstract

“…Observing the experimental results of sapphire, Wang [9] analyze the relative movement between workpiece and abrasive grit, and establish a mathematical model on the basis of the doublesided planetary grinding machine. Li [10,11] conducted orthogonal experiments on double-sided CMP of sapphire wafers, studied the effects of different processing parameters on material removal rate, surface roughness, and depth of SSD, and adopted the optimization method of orthogonal experimental results based on weight matrix, and obtained the effect of each factor on The in uence degree of the index value of the orthogonal experiment was compared, the processing results of sapphire wafers under different processing methods were compared, and the material removal equation based on experience and theory was established. Wang [12] examined the effects of grinding pressure, grinding wheel speed, and grinding wheel grit on the surface precision and machining e ciency, approximately obtaining 10 m/min in material removal rate.…”

Section: Introductionmentioning

confidence: 99%

Experimental study on characteristic of ultrathin sapphire wafer polishing with Layer Stacked Clamping (LSC) method

Chen

Han²,

Feng³

et al. 2022

Preprint

View full text Add to dashboard Cite

Ultrathin sapphire wafer is of great significance in the semiconductor field. In order to explore the effective clamping method of ultrathin sapphire wafer in double-side polishing, this paper studied the characteristic of Layer stacked clamping (LSC) method on polishing ultrathin sapphire wafer with double-side polishing machine. A self-made friction force test platform was built for learning the friction force between sapphire wafer and baseplate with different baseplate (stainless steel, cast iron, aluminum alloy) and different baseplate surface roughness (Ra 3.6 nm, 68.2 nm, 210.1 nm, 517.9 nm). Single factor polishing experiments were carried out on baseplate with different flatness (PV value 5.3 µm, 9.8 µm, 19.9 µm, 29.7 µm) and different thicknesses (0.082 mm, 0.104 mm, 0.119 mm). The double-side polishing experiments were carried out to compare the polishing performance on the ultrathin sapphire polishing between LSC method and traditional paraffin bonding method. The results show that the friction force of stainless steel and iron increase under the adsorption of droplets. Stainless steel performs higher friction force and is more suitable for making the baseplate. The inner fringe of limiter was cut off by the edge of the sapphire wafer and a slope was thereby formed. According to polishing results, LSC method has higher processing efficiency per unit time. The surface roughness, flatness and material removal rate are better than paraffin bonding. Finally, a smooth surface with surface roughness (Ra) 1.3 nm and flatness (PV) 0.988 µm was obtained with LSC method.

show abstract

“…However, as a typical hard-brittle and difficult-to-process material, 3 satisfying the demands required by LED substrate, such as nanoscale surface roughness, high surface shape accuracy, and damage-free, is challenging for sapphire. 4 As the last step of sapphire precision machining, the final surface quality of sapphire wafer is significantly determined by polishing, and abrasive machining, especially at fine diameter particles, is still the main planarization processing method to satisfy the performance requirements for sapphire wafer. 5 To date, surface finishing, consisting of mechanical polishing and chemical-mechanical polishing, is the most important approach in acquiring smooth and free surface/subsurface damage surface for the manufacturing of sapphire wafer.…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Synthesis of Al₂O₃/SiO₂ core–shell composite abrasives toward ultrasmooth and high-efficiency polishing for sapphire wafers

Zhao

Wang

et al. 2022

Proceedings of the Institution of Mechanical Engineers, Part E:

View full text Add to dashboard Cite

A novel Al2O3/SiO2 core–shell composite abrasive was successfully synthesized via a facile sol–gel strategy and utilized to promote the surface quality and polishing efficiency of sapphire wafer. The silica shell with dense and amorphous structure was successfully coated on Al2O3 core. Its synthesis mechanism was discussed deeply, and good dispersibility and uniform particle size were obtained. The acquired core–shell composite particles were employed for the planarization machining of sapphire wafer. Results show that the decrease in surface roughness of Al2O3/SiO2 core–shell composite abrasives during polishing is more than 20.2% of that of pure Al2O3 abrasives, the material removal rate is more than 5.1% of that of pure Al2O3 abrasives, and the residual stress of the sapphire wafer finished by composite abrasives is decreased by approximately 40%. These results demonstrate that the Al2O3/SiO2 core–shell composite abrasives provide a more excellent polishing performance for the sapphire wafer, resulting in smoother and scratch-free surface with a higher material removal rate compared with pure Al2O3 abrasives. On the basis of the reaction product analysis and elastic-plastic micro-contact mechanics, the reasons for the improvement of polishing performance were revealed in terms of chemical corrosion and mechanical abrasion.

show abstract

Effects of polishing parameters on surface quality in sapphire double-sided CMP

Cited by 37 publications

References 23 publications

Enhancing the Polishing Efficiency of CeO₂ Abrasives on the SiO₂ Substrates by Improving the Ce³⁺ Concentration on Their Surface

Enhancing the Polishing Efficiency of CeO₂ Abrasives on the SiO₂ Substrates by Improving the Ce³⁺ Concentration on Their Surface

Experimental study on characteristic of ultrathin sapphire wafer polishing with Layer Stacked Clamping (LSC) method

Synthesis of Al₂O₃/SiO₂ core–shell composite abrasives toward ultrasmooth and high-efficiency polishing for sapphire wafers

Contact Info

Product

Resources

About

Effects of polishing parameters on surface quality in sapphire double-sided CMP

Cited by 37 publications

References 23 publications

Enhancing the Polishing Efficiency of CeO2 Abrasives on the SiO2 Substrates by Improving the Ce3+ Concentration on Their Surface

Enhancing the Polishing Efficiency of CeO2 Abrasives on the SiO2 Substrates by Improving the Ce3+ Concentration on Their Surface

Experimental study on characteristic of ultrathin sapphire wafer polishing with Layer Stacked Clamping (LSC) method

Synthesis of Al2O3/SiO2 core–shell composite abrasives toward ultrasmooth and high-efficiency polishing for sapphire wafers

Contact Info

Product

Resources

About

Enhancing the Polishing Efficiency of CeO₂ Abrasives on the SiO₂ Substrates by Improving the Ce³⁺ Concentration on Their Surface

Enhancing the Polishing Efficiency of CeO₂ Abrasives on the SiO₂ Substrates by Improving the Ce³⁺ Concentration on Their Surface

Synthesis of Al₂O₃/SiO₂ core–shell composite abrasives toward ultrasmooth and high-efficiency polishing for sapphire wafers