Effects of polarization on four-beam laser interference lithography

Wang, Dapeng; Wang, Zuobin; Zhang, Ziang; Yue, Yong; Li, Dayou; Maple, Carsten

doi:10.1063/1.4793752

Cited by 56 publications

(35 citation statements)

References 34 publications

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“…In previous publications of four-beam laser interference, the phenomena of secondary periodicity or modulation of the interference pattern was found in the case of slight differences between incident angles [13]. The phenomena of modulation can lead to variable sizes of features such as the shape and period of interference structures in the final pattern distribution, and the control of absolutely equal incident angles is very difficult.…”

Section: Resultsmentioning

confidence: 98%

“…The antireflection and self-cleaning functions were due to the formation of an array of micro cone and hole structures on silicon wafer surfaces. Theoretically, using four-beam laser interference method could evenly generate squarely-distributed periodic structure patterns with the antireflection and self-cleaning functions on silicon wafer surfaces, but in practice, noticeable modulations were almost unavoidably introduced in interference patterns due to the misalignment of incident angles or unequal incident angles [13], which is not desired. In contrast to four-beam laser interference, the modulation phenomenon of three-beam laser interference method is not evident, which can avoid the generation of uneven interference patterns and produce the accurate regular interference patterns to ensure the pattern consistency.…”

Section: Introductionmentioning

confidence: 99%

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Antireflection silicon structures with hydrophobic property fabricated by three-beam laser interference

Zhao

Wang

Zhang

et al. 2015

Applied Surface Science

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a b s t r a c tThis paper demonstrates antireflective structures on silicon wafer surfaces with hydrophobic property fabricated by three-beam laser interference. In this work, a three-beam laser interference system was set up to generate periodic micro-nano hole structures with hexagonal distributions. Compared with the existing technologies, the array of hexagonally-distributed hole structures fabricated by three-beam laser interference reveals a design guideline to achieve considerably low solar-weighted reflectance (SWR) in the wavelength range of 300-780 nm. The resulting periodic hexagonally-distributed hole structures have shown extremely low SWR (1.86%) and relatively large contact angle (140 • ) providing with a self-cleaning capability on the solar cell surface.

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Section: Resultsmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

Antireflection silicon structures with hydrophobic property fabricated by three-beam laser interference

Zhao

Wang

Zhang

et al. 2015

Applied Surface Science

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“…It will influence not only on the contrast of pattern, bus also on the period of micro structure, direction of array arrangement, shapes of dots or holes [15][16][17][18]. The ideal situation is that all of the polarized components have the same vibration direction when they finally are combined on the sample surface.…”

Section: The Polarization State Of the Beammentioning

confidence: 98%

Error factors affecting the result of Laser Interference Lithography

Zhang¹,

Jiang²,

Tan

et al. 2013

2013 International Conference on Manipulation, Manufacturing and Measurement on the Nanoscale

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Laser Interference Lithography (LIL) techniques enable quantitative generation of periodic structures such as array of holes, dots and lines, which are the intrinsic structure in some optical functional material. In this paper, the most common errors factors that could affect the result of laser interference lithography were presented. The methods to enhance the quality of patterns of LIL also have been introduced.

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“…The polarization has a great influence on the intensity distribution of laser interference. 19 The substrates used in the experiments were single side polished monocrystalline silicon wafers with (100) orientation. After the structures fabricated on the samples, a scanning electron microscope (SEM, FEI XL30) was used to perform the measurements.…”

Section: Methodsmentioning

confidence: 99%

Effects of laser fluence on silicon modification by four-beam laser interference

Zhao

Wang

Zhang

et al. 2015

Journal of Applied Physics

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This paper discusses the effects of laser fluence on silicon modification by four-beam laser interference. In this work, four-beam laser interference was used to pattern single crystal silicon wafers for the fabrication of surface structures, and the number of laser pulses was applied to the process in air. By controlling the parameters of laser irradiation, different shapes of silicon structures were fabricated. The results were obtained with the single laser fluence of 354 mJ/cm 2 , 495 mJ/cm 2 , and 637 mJ/cm 2 , the pulse repetition rate of 10 Hz, the laser exposure pulses of 30, 100, and 300, the laser wavelength of 1064 nm, and the pulse duration of 7-9 ns. The effects of the heat transfer and the radiation of laser interference plasma on silicon wafer surfaces were investigated. The equations of heat flow and radiation effects of laser plasma of interfering patterns in a four-beam laser interference distribution were proposed to describe their impacts on silicon wafer surfaces. The experimental results have shown that the laser fluence has to be properly selected for the fabrication of well-defined surface structures in a four-beam laser interference process. Laser interference patterns can directly fabricate different shape structures for their corresponding applications. V C 2015 AIP Publishing LLC. [http://dx

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Effects of polarization on four-beam laser interference lithography

Cited by 56 publications

References 34 publications

Antireflection silicon structures with hydrophobic property fabricated by three-beam laser interference

Antireflection silicon structures with hydrophobic property fabricated by three-beam laser interference

Error factors affecting the result of Laser Interference Lithography

Effects of laser fluence on silicon modification by four-beam laser interference

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