Effects of photo-assisted electrodeposited on CuInSe2 thin films

Chang, Tsung Wei; Lee, Wen Hsi; Su, Yi-Jen; Hsiao, Yu Jen

doi:10.1186/1556-276x-9-660

Cited by 11 publications

(5 citation statements)

References 15 publications

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“…(3) With regard to the ternary and quaternary chalcogenides, especially CIGS and CZTS, it is worth further developing the one-step co-deposition method, with the consideration of achieving selenization or sulfurization during the electrodeposition and thus simplifying the manufacturing operations to make the electrodeposition a more competitive technique in delivering low cost solar cells. (4) New ideas, for example, nanoparticle-based electrodeposition [172], photo-assisted electrodeposition [173], in situ monitoring of the deposition [174,175], may create the chances to gain better understanding of the kinetics of electrodeposition, make the control of the composition and microstructure of electrodeposited films more effective, and consequently deliver high quality films. (5) There is generally a lack of theoretical models to simulate the electrodeposition, in particular for the co-deposition of multiple elements.…”

Section: Perspectivementioning

confidence: 99%

Electrodeposition Fabrication of Chalcogenide Thin Films for Photovoltaic Applications

et al. 2020

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Electrodeposition, which features low cost, easy scale-up, good control in the composition and great flexible substrate compatibility, is a favorable technique for producing thin films. This paper reviews the use of the electrodeposition technique for the fabrication of several representative chalcogenides that have been widely used in photovoltaic devices. The review focuses on narrating the mechanisms for the formation of films and the key factors that affect the morphology, composition, crystal structure and electric and photovoltaic properties of the films. The review ends with a remark section addressing some of the key issues in the electrodeposition method towards creating high quality chalcogenide films.

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Section: Perspectivementioning

confidence: 99%

Electrodeposition Fabrication of Chalcogenide Thin Films for Photovoltaic Applications

et al. 2020

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“…And also these dopants are introduced as substitutional defects on zinc sites. The fact that the radius of 4-coordinate Ga 3+ (0.62 Å) and that of In 3+ (0.81 Å) is closer to that of 4-coordinate Zn 2+ (0.74 Å), make it useful as a codopant for ZnO structures [10,11]. Thin film deposition of ZnO can be carried out by various techniques like sputtering [12], pulsed laser deposition [13], microwave assisted synthesis [14], sol-gel [15], ultrasonic spray pyrolysis [16], chemical bath deposition [17], etc.…”

Section: Introductionmentioning

confidence: 99%

Elucidation of structural, morphological, optical and photoluminescence properties of single and (In, Ga) co-doped ZnO nanocrystalline thin films

Shaheera¹,

Girija

Kaur

et al. 2019

Bull Mater Sci

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Single and co-doped ZnO thin films are currently under intense investigation and development for optoelectronic applications. Here in this study, pristine, indium-doped (IZO), gallium-doped (GZO) and co-doped (IGZO) ZnO thin films were deposited on a glass substrate using radio frequency magnetron sputtering. A comparative study of all the films was carried out on the basis of their various properties. The effect of single and co-doping on the structural (X-ray diffraction (XRD) studies and Raman studies), morphological (field emission scanning electron microscopy and energy dispersive X-ray spectroscopy studies) and optical properties (ultraviolet-visible (UV-Vis) and photoluminescence (PL)) of the deposited films was investigated. X-ray photoelectron spectroscopy (XPS) characterization was employed to analyse the surface chemical composition and bonding of the deposited film. From the XRD patterns, it was found that the films were highly crystalline in nature and preferentially oriented along the (002) direction with a hexagonal wurtzite structure, consistent with Raman analysis. IGZO films displayed a dramatic improvement in the surface morphology as compared with the single dopant films due to the compensation effect of gallium and indium doping which reduced the lattice strain. The XPS analysis confirmed the presence of the oxidized dopants in each film. All thin films have shown excellent optical properties with more than 90% transmission in the visible range of light. The blue-shift of the absorption edge accompanied by the increase of the optical band gap confirmed the Burstein-Moss effect. The UV PL peak originated from the near band edge emission of crystalline ZnO, while the visible PL was associated with the radiative transition related to oxygen interstitial (Oi) defects in the ZnO structure.

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“…Such extensive investigation enabled the development of annealing maps and radar sketches, which revealed that the postdeposition modifi cation of deposited ZnO-based TCO materials can be the key for developing a replacement for ITO, as it can enhance the electrical properties and stability under environmental conditions by creating oxygen vacancies, [ 26 ] passivation of the grain boundaries, [ 27 ] and other structural improvements [ 28 ] as discussed below.…”

Section: Introductionmentioning

confidence: 99%

Mapping the Electrical Properties of ZnO‐Based Transparent Conductive Oxides Grown at Room Temperature and Improved by Controlled Postdeposition Annealing

Lyubchyk

Vicente

Soule

et al. 2015

Adv Elect Materials

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Indium tin oxide (ITO) is the current standard state‐of‐the‐art transparent conductive oxide (TCO), given its remarkable optical and electrical properties. However, the scarcity of indium carries an important drawback for the long‐term application due to its intensive use in many optoelectronic devices such as displays, solar cells, and interactive systems. Zinc oxide‐based TCOs can be a cost‐effective and viable alternative, but the limitations imposed by their transmittance versus resistivity tradeoff still keep them behind ITO. In this work, an in‐depth study of the structural and compositional material changes induced by specific postannealing treatments is presented, based on aluminum zinc oxide (AZO) and hydrogenated AZO (AZO:H) thin films grown by rf‐magnetron sputtering at room temperature that allows an extensive understanding of the films' electrical/structural changes and the ability to tune their physical parameters to yield increasingly better performances, which put them in line with the best ITO quality standards. The present investigation comprises results of thermal annealing at atmospheric pressure, vacuum, forming gas, H2 and Ar atmospheres and plasmas. Overall the study being performed leads to a decrease in resistivity above 40%, reaching ρ ≈ 3 × 10−4 Ω cm, with an average optical transmittance in the visible region around 88%. Such results are equivalent to the properties of state‐of‐the‐art ITO.

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Effects of photo-assisted electrodeposited on CuInSe2 thin films

Cited by 11 publications

References 15 publications

Electrodeposition Fabrication of Chalcogenide Thin Films for Photovoltaic Applications

Electrodeposition Fabrication of Chalcogenide Thin Films for Photovoltaic Applications

Elucidation of structural, morphological, optical and photoluminescence properties of single and (In, Ga) co-doped ZnO nanocrystalline thin films

Mapping the Electrical Properties of ZnO‐Based Transparent Conductive Oxides Grown at Room Temperature and Improved by Controlled Postdeposition Annealing

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