Effects of partial substitution of Co by Ni on the high-temperature thermoelectric properties of TiCoSb-based half-Heusler compounds

Zhou, Min; Feng, Chude; Chen, Lidong; Huang, Xiangyang

doi:10.1016/j.jallcom.2004.07.074

Cited by 66 publications

(46 citation statements)

References 15 publications

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“…It seems that these impurity phases are due to the evaporation of antimony at arc melting. Each lattice parameter of TiCoSb, ZrCoSb, and HfCoSb is 0.58845, 0.60648, and 0.60411 nm, respectively, which almost agree with the literature data of TiCoSb, 1,2,8,[18][19][20][21] and ZrCoSb and HfCoSb. 3,30) We detected the impurity phases on TiCoSb 28) and HfCoSb but not for ZrCoSb from the surface observation by SEM.…”

Section: Resultssupporting

confidence: 87%

“…According to Terada et al, 17,18) TiCoSb shows paramagnetism nearly independent of temperature and does not have a magnetic moment above 80 K. Also, they have reported that the magnitude of the magnetic susceptibility increases by a heat treatment, which is due to a small amount of a precipitated ferromagnetic phase. Similar magnetic property of TiCoSb has been demonstrated in the past reports on TiCoSn x Sb 1Àx , 8,19) TiCo 1Àx Ni x Sb 20,21) solid solution, and so on. 22) The thermoelectric properties of TiCoSb have been reported in large number below the room temperature, 19,20,23) and there are data by Xia et al 24) and Zhou et al 21) for temperature up to 800 and 900 K. Until now, we have studied these 18 valence electron systems.…”

Section: Introductionsupporting

confidence: 85%

“…Similar magnetic property of TiCoSb has been demonstrated in the past reports on TiCoSn x Sb 1Àx , 8,19) TiCo 1Àx Ni x Sb 20,21) solid solution, and so on. 22) The thermoelectric properties of TiCoSb have been reported in large number below the room temperature, 19,20,23) and there are data by Xia et al 24) and Zhou et al 21) for temperature up to 800 and 900 K. Until now, we have studied these 18 valence electron systems. [25][26][27][28] In this paper, we discuss the thermoelectric properties of (Ti, Zr, Hf)CoSb systems at high temperature region up to 973 K.…”

Section: Introductionsupporting

confidence: 85%

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Thermoelectric Properties of (Ti,Zr,Hf)CoSb Type Half-Heusler Compounds

et al. 2005

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Half-Heusler compounds have a possibility as a new thermoelectric material due to the large thermoelectric power and low thermal conductivity derived from the band structure and voids in the crystal, respectively. Among these materials, we have paid attention to (Ti,Zr,Hf)CoSb system, and have investigated the improvement of the thermoelectric figure of merit from the measurements of the electrical resistivity, thermoelectric power, and thermal conductivity. We obtained the largest ZT ¼ 0:027 on TiCoSb at 921 K. From the analysis by Jonker plot and the difference of the atomic radii between titanium and cobalt on TiCoSb, it is indicated that the dispersion between our data and a few previous data was originated in two effects: one is deviations from the stoichiometric composition by evaporation of antimony on arc melting, and the other is relaxation of the structural disorder by annealing.

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Section: Resultssupporting

confidence: 87%

Section: Introductionsupporting

confidence: 85%

Section: Introductionsupporting

confidence: 85%

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Thermoelectric Properties of (Ti,Zr,Hf)CoSb Type Half-Heusler Compounds

et al. 2005

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“…The substitution in each site is very useful for improvement of thermoelectric properties, because the position of the Fermi level in the gap can be controlled and the lattice thermal conductivity reduces due to enhancement of the phonon scattering. Since the half-Heusler compounds with 18 valence electrons have the narrow band gap near the Fermi level and show the large thermoelectric power, (Ti, Zr, Hf)NiSn, [1][2][3][4][5][6][7] (Ti, Zr, Hf)CoSb [8][9][10][11] and other half-Heusler compounds have been studied as advanced thermoelectric materials. Although high performance n-type materials in the half-Heusler compounds have been reported, 4,6) such p-type thermoelectric materials have been scarcely reported.…”

Section: Introductionmentioning

confidence: 99%

Thermoelectric Properties of Half-Heusler Type LaPdBi and GdPdBi

et al. 2007

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The authors studied the thermoelectric properties of LaPdBi and GdPdBi half-Heusler compounds. Polycrystalline samples were prepared by a spark plasma sintering (SPS) technique, and their thermoelectric properties were measured above room temperature. The electrical resistivities of both samples show a semiconductor like behavior and are on the order of 10 À6 m. The estimated band gap energies of LaPdBi and GdPdBi are 0.05 and 0.07 eV, respectively. The values of the thermoelectric power are positive and decrease with increasing temperature. The thermal conductivities increase with increasing temperature because of the increase of the carrier contribution to the thermal conductivity.The maximum values of the dimensionless figure of merit ZT are 0.085 at 615 K for LaPdBi and 0.084 at 469 K for GdPdBi, respectively.

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“…[1][2][3][4][5] The theoretically calculated band gap energy of TiCoSb (0.95, 1) 0.82 eV 5) ) is larger than that of the similar material TiNiSn (0.42 eV, 1) 0.51 2) ). So, TiCoSb is expected to have a larger thermoelectric power S. From the literatures, [6][7][8][9][10][11] TiCoSb has a negative thermoelectric power. The improvement of the structural disorder 12) by annealing has been reported on MNiSn system [13][14][15] and TiCoSb system.…”

Section: Introductionmentioning

confidence: 99%

Thermoelectric and Thermophysical Properties of TiCoSb-ZrCoSb-HfCoSb Pseudo Ternary System Prepared by Spark Plasma Sintering

et al. 2006

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We studied the thermoelectric and thermophysical properties of TiCoSb-ZrCoSb-HfCoSb pseudo ternary system. Polycrystalline samples were prepared by a spark plasma sintering (SPS) technique, and their thermoelectric properties above room temperature and thermophysical properties at room temperature were measured. All the samples were identified as a half-Heusler compound by the X-ray diffraction analysis. The lattice parameter, electrical resistivity and thermoelectric power systematically change with the composition in the pseudo ternary phase diagram. All the samples indicated negative values of the thermoelectric power. Low thermal conductivity was achieved in the samples with the composition near the center of the pseudo ternary phase diagram where the effect of the alloy scattering becomes large. The maximum value of ZT was obtained to be 0.073 at 790 K for Ti 0:25 (Zr 0:5 Hf 0:5 ) 0:75 CoSb.

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Effects of partial substitution of Co by Ni on the high-temperature thermoelectric properties of TiCoSb-based half-Heusler compounds

Cited by 66 publications

References 15 publications

Thermoelectric Properties of (Ti,Zr,Hf)CoSb Type Half-Heusler Compounds

Thermoelectric Properties of (Ti,Zr,Hf)CoSb Type Half-Heusler Compounds

Thermoelectric Properties of Half-Heusler Type LaPdBi and GdPdBi

Thermoelectric and Thermophysical Properties of TiCoSb-ZrCoSb-HfCoSb Pseudo Ternary System Prepared by Spark Plasma Sintering

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