Thermoelectric Properties of Half-Heusler Type LaPdBi and GdPdBi

Sekimoto, Takeyuki; Kurosaki, Ken; Muta, Hiroaki; Yamanaka, Shinşuke

doi:10.2320/matertrans.e-mra2007807

Cited by 21 publications

(10 citation statements)

References 17 publications

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“…Gofryk et al [100] reported that a non-trivial zero gap semiconducting state has been postulated for YPdBi with relatively small topological band inversion strength. TEP in LaPdBi and GdPdBi is positive and decreases with increasing temperature [594]. The differences in TEP and electrical resistivity between LaPdBi and GdPdBi arise due to the difference in band gap [594].…”

Section: Thermopower Thermal Expansion and Hall Measurementsmentioning

confidence: 93%

“…The differences in TEP and electrical resistivity between LaPdBi and GdPdBi arise due to the difference in band gap [594]. The thermal conductivity of both the compounds increases with increase in temperature, signalling that the electronic thermal conductivity is predominant [594].…”

Section: Thermopower Thermal Expansion and Hall Measurementsmentioning

confidence: 99%

“…GdPdBi arise due to the difference in band gap [594]. The thermal conductivity of both the compounds increases with increase in temperature, signalling that the electronic thermal conductivity is predominant [594].…”

Section: Thermopower Thermal Expansion and Hall Measurementsmentioning

confidence: 99%

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Review on magnetic and related properties of RTX compounds

Gupta

Суреш

2015

Journal of Alloys and Compounds

256

124

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RTX (R=rare earths, T= 3d/4d/5d, transition metals such as Sc, Ti, Mn, Fe, Co, Ni, Cu, Ru, Rh, Pd, Ag, Os, Ir, Pt, Au, and X=p-block elements such as Al, Ga, In, Si, Ge, Sn, As, Sb, Bi) series is a huge family of intermetallics compounds. These compounds crystallize in different crystal structures depending on the constituents. Though these compounds have been known for a long time, they came to limelight recently in view of the large magnetocaloric effect (MCE) and magnetoresistance (MR) shown by many of them. Most of these compounds crystallize in hexagonal and tetragonal crystal structures. Some of them show crystal structure modification with annealing temperature; while a few of them show iso-structural transition in the paramagnetic regime. Their magnetic ordering temperatures vary from very low temperatures to temperatures well above room temperature (~510 K). Depending on the crystal structure, they show a variety of magnetic and electrical properties.These compounds have been characterized by means of a variety of techniques/measurements such as x-ray diffraction, neutron diffraction, magnetic properties, heat capacity, magnetocaloric properties, electrical resistivity, magnetoresistance, thermoelectric power, thermal expansion, Hall effect, optical properties, XPS, Mössbauer spectroscopy, ESR, μSR, NMR, NQR etc. Some amount of work on theoretical calculations on electronic structure, crystal field interaction and exchange interactions has also been reported. The interesting aspect of this series is that they show a variety of physical properties such as Kondo effect, heavy fermion behavior, spin glass state, intermediate valence, superconductivity, multiple magnetic transitions, metamagnetism, large MCE, large positive as well as negative MR, spin orbital compensation, magnetic polaronic behavior, pseudo gap effect etc.Except Mn, no other transition metal in these compounds possesses considerable magnetic moments.Because of this RMnX compounds in general have high ordering temperatures. Interstitial modification using hydrogen and nitrogen is found to alter their crystal structures and magnetic properties considerably. RTX compounds also show interesting pressure effects on their structural and magnetic properties. In summary, these compounds show variety of physical properties over a wide range of temperatures. This review is intended to cover all the important results obtained in this family, particularly in the last few years.

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Section: Thermopower Thermal Expansion and Hall Measurementsmentioning

confidence: 93%

Section: Thermopower Thermal Expansion and Hall Measurementsmentioning

confidence: 99%

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Review on magnetic and related properties of RTX compounds

Gupta

Суреш

2015

Journal of Alloys and Compounds

256

124

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“…However, some issues involving relatively high thermal conductivity remain unsolved [2]. Recently, exploratory reports have shown that rare-earth (R) bearing half-Heusler phases RT X Sb can also exhibit good thermoelectric performance, characterized by fairly low thermal conductivity [3][4][5][6][7][8][9][10][11][12][13][14][15][16]. Based on these predictions, we examined in this work a series of Er1-xHoxNiSb samples with the main aim at determining the effect of rare-earth substitution on the magnitude of their thermoelectric power factor.…”

Section: Introductionmentioning

confidence: 99%

High-temperature thermoelectric properties of half-Heusler phases Er1-xHoxNiSb

Ciesielski

Synoradzki

Wolańska

et al. 2019

Materials Today: Proceedings

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Polycrystalline samples of Er1-xHoxNiSb (x = 0, 0.2, 0.3, 0.5, 0.7, 0.8, 1) were characterized by means of x-ray powder diffraction (XRD), scanning electron microscopy (SEM), and optical metallography. The results proved the formation of half-Heusler alloys in the entire composition range. Their electrical transport properties (resistivity, thermoelectric power) were studied in the temperature interval 350-1000 K. The measured electrical resistivity spanned between 5 and 25 m. The maximum thermopower of 50-65 V/K was observed at temperatures 500-650 K. Replacing Ho for Er resulted in a non-monotonous variation of the thermoelectric power factor (PF = S 2 /). The largest PF of 4.6 WcmK -2 was found at 660 K for Er0.5Ho0.5NiSb. This value is distinctly larger than PF determined for the terminal phases ErNiSb and HoNiSb.

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“…The first system is the heavy half-Heusler LaPtBi [7], which in most of the calculations exhibits a band-inversion [8] indicating that it represents a typical nontrivial semimetal. The lighter half-Heusler LaPdBi [9], which in calculations exhibits a small indirect band gap [1][2][3], will serve as a representative trivial system. Since both compounds have the same crystal structure, it might be possible to generate a series of isostructural La(Pt 1−x Pd x )Bi alloys, by continuously varying x from 0 to 1.…”

Section: Modelingmentioning

confidence: 99%

Resonant impurity states in chemically disordered half-Heusler Dirac semimetals

Kiss,

D'Souza,

Wollmann

et al. 2015

Preprint

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We address the electron transport characteristics in bulk half-Heusler alloys with their compositions tuned to the borderline between topologically nontrivial semi-metallic and trivial semiconducting phases. The precise first-principles calculations based on the coherent potential approximation (CPA) reveal that all the studied systems exhibit sets of dispersionless impurity-like resonant levels, with one of them being located right at the Dirac point. By means of the Kubo formalism we reveal that the residual conductivity of these alloys is strongly suppressed by impurity scattering, whereas the spin Hall conductivity exhibits a large value which is comparable to that of Pt, thereby leading to divergent spin Hall angles.

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Thermoelectric Properties of Half-Heusler Type LaPdBi and GdPdBi

Cited by 21 publications

References 17 publications

Review on magnetic and related properties of RTX compounds

Review on magnetic and related properties of RTX compounds

High-temperature thermoelectric properties of half-Heusler phases Er1-xHoxNiSb

Resonant impurity states in chemically disordered half-Heusler Dirac semimetals

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