Effects of oxygen radical on the properties of indium tin oxide thin films deposited at room temperature by oxygen ion beam assisted evaporation

Kim, J.S.; Bae, Jong Woon; Kim, H.J.; Lee, N.-E.; Yeom, Geun‐Young; Oh, K.H.

doi:10.1016/s0040-6090(00)01392-4

Cited by 29 publications

(10 citation statements)

References 17 publications

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“…1-3 These properties are attributed to both the intentional Sn doping and oxygen vacancies, because the Sn 4+ substitutes the In 3+ cation to create a donor level in the energy band gap and the oxygen vacancies act as doubly ionized donors and contribute two electrons per oxygen vacancy to the electrical conductivity. Normally, polyethylene terephthalate [11][12][13] ͑PET͒ and polycarbonate [14][15][16] ͑PC͒ have been widely researched as substrate materials for the flexible display and flexible electronics. 2,[5][6][7] There is also considerable interest in plastic substrates in the optoelectronic industry.…”

Section: Introductionmentioning

confidence: 99%

Characterization of the physical and electrical properties of Indium tin oxide on polyethylene napthalate

Han

Adams

Mayer

et al. 2005

Journal of Applied Physics

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Room-temperature growth of crystalline indium tin oxide films on glass using low-energy oxygen-ion-beam assisted deposition Electrical, optical, and structural properties of indium-tin-oxide thin films deposited on polyethylene terephthalate substrates by rf sputtering Indium tin oxide ͑ITO͒ thin films, on polyethylene napthalate ͑PEN͒ of both good electrical and optical properties were obtained by radio-frequency sputtering. The optoelectronic properties of the ITO films on PEN substrate were evaluated in terms of the oxygen content and the surface morphology. Rutherford backscattering spectrometry analysis was used to determine the oxygen content in the film. Hall-effect measurements were used to evaluate the dependence of electrical properties on oxygen content. The results showed that the resistivity of the ITO film increases with increasing oxygen content. For an oxygen content of 1.6ϫ 10 18 -2.48ϫ 10 18 atoms/ cm 2 , the resistivity varied from 0.38ϫ 10 −2 to 1.86ϫ 10 −2 ⍀ cm. Typical resistivities were about ϳ10 −3 ⍀ cm. UV-Vis spectroscopy and atomic force microscopy measurements were used to determine the optical transmittance and surface roughness of ITO films, respectively. Optical transmittances of ϳ85% were obtained for the ITO thin films. Our results revealed that substrate roughness were translated onto the deposited ITO thin layers. The ITO surface roughness influences both the optical and electrical properties of the thin films. For a 125 m PEN substrate the roughness is 8.4 nm, whereas it is 3.2 nm for 200 m substrate thicknesses. The optical band gap is about 3.15 eV for all ITO film and is influenced by the polymer substrate. A model is proposed that the optical transmittance in the visible region is governed by the carrier concentration in the ITO thin films.

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Section: Introductionmentioning

confidence: 99%

Characterization of the physical and electrical properties of Indium tin oxide on polyethylene napthalate

Han

Adams

Mayer

et al. 2005

Journal of Applied Physics

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“…In particular, due to the low thermal stability of polymers [2], low temperature growth of ITO films has been a key issue in the field of flexible displays in which polymers must be used as substrate materials [2,3]. Therefore, the synthesis of ITO films with low resistivity and high transmittance has been recently pursued by many researchers at low temperature without dimensional change and thermal damage of polymers [4][5][6][7]. For the low temperature deposition of ITO films, diverse methods have been attempted such as ion beam-assisted deposition (IAD), pulse laser deposition with cluster ion beams, and DC or RF sputtering with substrate bias [4][5][6].…”

Section: Introductionmentioning

confidence: 99%

“…For the low temperature deposition of ITO films, diverse methods have been attempted such as ion beam-assisted deposition (IAD), pulse laser deposition with cluster ion beams, and DC or RF sputtering with substrate bias [4][5][6]. In case of an IAD technique, ion beams increase the mobility of surface adatoms by momentum transfer with energetic ions and then ITO films with smoother and denser structures can be obtained even at room temperature [4,7]. But, there are some disadvantages in the preparation of ITO films by IAD.…”

Section: Introductionmentioning

confidence: 99%

Room temperature deposition of crystalline indium tin oxide films by cesium-assisted magnetron sputtering

Lee¹,

Baik²

2008

Applied Surface Science

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“…[1][2][3][4] Amorphous ITO films (a-ITO) can also be beneficial to current flat panel display devices because amorphous films decrease the production cost of patterned electrodes due to having a much higher etching rate than crystalline ITO films and showing clearer lithographic patterning. 3,5) RT-ITO films have been deposited by several techniques such as evaporation, [6][7][8] high-density-plasma-assisted evaporation (HDPE), [9][10][11] ion-beam-assisted evaporation (IBAE), [12][13][14][15][16][17] magnetron sputtering, [1][2][3] ion beam sputtering (IBS), [18][19][20][21] and pulsed laser deposition (PLD). 4,22,23) Among these techniques, sputtering has been widely used as a largearea deposition technique.…”

mentioning

confidence: 99%

“…The details of the system and its operational conditions can be found elsewhere. 14,15) The properties of the deposited a-ITO films were measured using a four-point probe and a Hall measurement system. Figure 1 shows the effect of SnO 2 wt% in the ITO evaporation source on the resistivities of the deposited ITO films measured by the Hall measurement system.…”

mentioning

confidence: 99%

Effects of Tin Concentration on the Electrical Properties of Room-Temperature Ion-Beam-Assisted-Evaporation-Deposited Indium Oxide Thin Films

Bae

Park

Cho

et al. 2002

Jpn. J. Appl. Phys.

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Tin-doped indium oxide (ITO) thin films were deposited at room temperature by a dual-oxygen-ion-beam-assisted evaporator system and the effects of doped tin concentrations in the films on the electrical properties of the ITO films were investigated. Doped tin atoms in amorphous ITO films caused extra scattering and structural defects due to the inactivation of tin atoms in the films. Therefore, increasing the tin concentration decreased the conductivity. The lowest resistivity of indium oxide (IO) and ITO obtained was 3.6 × 10 −4-cm for IO and 4 × 10 −4-7 × 10 −4-cm for 5-25 wt% SnO 2. The mobility and mean free path of these films were 20-63 cm 2 /V•s and 3.3-7.4 nm, respectively.

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Effects of oxygen radical on the properties of indium tin oxide thin films deposited at room temperature by oxygen ion beam assisted evaporation

Cited by 29 publications

References 17 publications

Characterization of the physical and electrical properties of Indium tin oxide on polyethylene napthalate

Characterization of the physical and electrical properties of Indium tin oxide on polyethylene napthalate

Room temperature deposition of crystalline indium tin oxide films by cesium-assisted magnetron sputtering

Effects of Tin Concentration on the Electrical Properties of Room-Temperature Ion-Beam-Assisted-Evaporation-Deposited Indium Oxide Thin Films

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