Effects of Oxygen Content on the Structural and Electrical Properties of Thin Yb[sub 2]O[sub 3] Gate Dielectrics

Abstract

This paper describes the structural properties and electrical characteristics of thin normalYb2normalO3 gate dielectrics deposited on silicon substrates through reactive sputtering. The structural and morphological features of these films were studied, as a function of the growth conditions (three various argon-to-oxygen flow ratios, 10∕15 , 15∕10 , and 20∕5 , and temperatures from 600to800°C ), by X-ray diffraction, atomic force microscopy, and X-ray photoelectron spectroscopy. It was found that normalYb2normalO3 dielectrics having a 15∕10 flow condition after annealing at 700°C exhibit a thinner capacitance equivalent thickness and excellent electrical properties, including the interface trap density and the hysteresis in the capacitance–voltage curves. Furthermore, this condition has a small slope in the Poole–Frenkel emission and the Schottky emission, indicating a shallow level trap and a low barrier height in the normalYb2normalO3 film. These results suggest the reduction of the interfacial SinormalO2 formation and minimal surface roughness due to the optimization of oxygen in the metal-oxide film.

Aqueous Solution-Processed Nanometer-Thin Crystalline Indium Ytterbium Oxide Thin-Film Transistors

“…In addition, the transparency and optical bandgap of Yb 2 O 3 were also measured ( Figure 3 c). The Yb 2 O 3 shows higher transparency at short wavelength and larger optical bandgap of 5.48 eV, in accord with previous research [ 25 ]. Hence, the increased optical bandgap with Yb incorporation is ascribed to the larger optical bandgap of Yb 2 O 3 than that of In 2 O 3 .…”

“…Besides, the Yb and In share the same valence state of +3, which would not introduce additional electrons [ 16 ]. Meanwhile, Yb 2 O 3 and In 2 O 3 hold the same bixbyite structures and hence low defect densities could be expected [ 16 , 25 ]. Jun et al reported the electrospun indium ytterbium oxide (In-Yb-O) nanofiber TFTs [ 26 ].…”

High performance sol–gel synthesized Ce0.9Sr0.1(Zr0.53Ti0.47)O4sensing membrane for a solid-state pH sensor

“…The accumulated charges at the surface of the gate oxide lm that arise from the electrolyte solution cannot be passed through the lm, thus leading to the change in the channel conductance and current modulation. [13][14][15] However, moisture absorption is a major issue when RE oxides are used as gate dielectrics in CMOS devices, which degrades their electrical performance due to the formation of hydroxides. 16 To avoid the unwanted hydroxide lm, the Zr/Ti ratio of 0.53/0.47 was previously successfully adopted in a sensing lm by our group.…”

Host‐Sensitized Continuum‐Broad‐Band White‐Light Emitting Yb2O3:Er3+ Phosphor under CW‐NIR Light Absorption

“…The band gap of the Yb 2 O 3 is around 5 eV. [29] At higher pump power, eight/nine CW 980 nm laser photon absorption process confirms photon avalanche behavior within the synthesized material. Since, the absorption cross-section Yb 3 + is temperature dependent.…”