Effects of Organic Compounds on Microstructure, Optical, and Electrical Properties of ITO Thin Films Prepared by Dip-Coating Method

Abstract

Tin-doped Indium oxide (ITO) thin films were prepared by sol-gel dip-coating technique using low-cost metal salts and organic solvents. The coated films were treated without annealing or annealed at 400°C and 600°C in 3% H2/97% N2mixtures atmosphere. Microstructure, optical, and electrical properties of the prepared ITO films were investigated in detail. The maximum transmittance in the visible range (380–780 nm) is 85.6%, and the best resistivity is5×10−2 Ω-cm when annealed at 600°C in 3% H2/97% N2mixtures atmosphere. It is found that the optical and electrical properties of the prepared ITO films are strongly related to the microstructure variation. The organic compounds could not be removed completely, and the prepared ITO thin films were not dense when the prepared ITO film was annealed at 600°C in 3% H2/97% N2mixtures atmosphere, causing the poor conductivity.

Pengaruh DEA dan Waktu Dipping terhadap Nilai Band Gap Lapisan Tipis CuSnO3

“…Metode yang dapat digunakan untuk mensintesis CuSnO3 adalah metode sol-gel karena memiliki kelebihan dengan proses yang lebih sederhana, lebih murah dan dapat digunakan dalam pembuatan lapisan tipis dengan luas area besar tanpa peralatan mahal dan kompleks (Yang et al, 2012). Metode sol-gel terditi dari beberapa teknik pelapisan diantaranya spray pyrolysis (Ogi, 2006), dip-coating (Brinker et al, 1991), dan spin-coating (Stoica et al, 2000).…”