Effects of O/sub 2//C/sub 2/F/sub 6/ plasma descum with RF cleaning on via formation in MCM-D substrate using photosensitive BCB

Ju, Chul-Won; Park, Seong-Su; Kim, Seong‐Jin; Pack, Kyu-Ha; Lee, Hee-Tae; Song, Min-Kyu

doi:10.1109/ectc.2001.927983

Cited by 3 publications

(2 citation statements)

References 3 publications

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“…In previous works, a multilayer packaging structure is achieved by using dry etching vias in BCB to realize interconnection [9]. Due to the high cost of dry etching and the development of BCB material, photosensitive BCB is used in high-frequency millimeter wave multichip modules extensively [10][11][12]. GE company has proposed a high density interconnection (GE-HDI) technology which is a process for interconnecting bare chips bonded to substrate with ultra-fine metal lines and vias drawn with the help of a computerguided laser [13][14][15][16].…”

Section: Introductionmentioning

confidence: 99%

A wafer-scale packaging structure with monolithic microwave integrated circuits and passives embedded in a silicon substrate for multichip modules for radio frequency applications

Geng

Ding

et al. 2009

J. Micromech. Microeng.

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A wafer-level packaging structure with chips and passive components embedded in a silicon substrate for multichip modules (MCM) is proposed for radio frequency (RF) applications. The packaging structure consists of two layers of benzocyclobutene (BCB) films and three layers of metalized films, in which the monolithic microwave ICs (MMICs), thin film resistors, striplines and microstrip lines are integrated. The low resistivity silicon wafer with etched cavities is used as a substrate. The BCB films serve as interlayer dielectrics (ILDs). Wirebonding gold bumps are used as electric interconnections between different layers, which eliminate the need of preparing vias by costly procedures including dry etching, metal sputtering and electroplating. The chemical mechanical planarization (CMP) is used to uncover the gold bumps, and the BCB curing profile is optimized to obtain the appropriate BCB film for CMP process. In this work, the thermal, mechanical, electrical as well as RF properties of the packaging structure are investigated. The packaging thermal resistance can be controlled below 2 • C W −1 . The average shear strength of the gold bumps on the BCB surface is about 70 MPa. In addition, a Kelvin test structure is fabricated for resistance testing of the vertical vias. The performances of MMIC and interconnection structure at high frequency are simulated and tested. The testing results reveal that the slight shifting of S-parameter curves of the packaged MMIC indicates perfect transmission characteristics at high frequency. For the transition structure of transmission line, the experimental results are compatible with the simulation results. The insertion loss (S 21 ) is below 0.4 dB from 0 to 40 GHz and the return loss (S 11 ) is less than −20 dB from 0 to 40 GHz. For a low noise amplifier (LNA) chip, the S 21 shifting caused by the packaging structure is below 0.5 dB, and S 11 is less than −10 dB from 8 GHz to 14 GHz.

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Section: Introductionmentioning

confidence: 99%

A wafer-scale packaging structure with monolithic microwave integrated circuits and passives embedded in a silicon substrate for multichip modules for radio frequency applications

Geng

Ding

et al. 2009

J. Micromech. Microeng.

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“…It can be seen form Table IV that there was Si in the polyimide and BCB of this study. In microelectronic industry, plasma containing or other fluorine containing gas is usually used to descum the Si containing BCB or PI via [11]. If no-fluorine containing plasma is used for the descum process, layer may form on the top surface, and prevent further descum process of the plasma.…”

Section: B Xps Analysis Of Passivation Surfacementioning

confidence: 99%

Surface property of passivation layer on integrated circuit chip and solder mask layer on printed circuit board

Luo

Wong

2003

IEEE Trans. Electron. Packag. Manufact.

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Adhesion of underfill to passivation layer on integrated circuit chip and solder mask layer on printed circuit board is critical to the reliability of an underfilled flip chip package. In this study, the surface properties of solder mask and four passivation materials: benzocyclobutene (BCB), polyimide (PI), silicon dioxide ( 2 ), and silicon nitride (SiN) were investigated. A combination of both wet and dry cleaning processes was very effective to remove contaminants from the surface. The element oxygen, introduced during 2 plasma treatment or 3 treatment, led to the increase of the base component of surface tension. X-ray photoelectron spectroscopy (XPS) experiments confirmed the increase of oxygen concentration at the surface after 3 treatment. Wetting of underfill on passivation and solder mask was slightly improved at higher temperatures. Although 3 cleaning and 2 plasma treatment significantly improved the wetting of underfill on passivation materials, they did not improve adhesion strength of epoxy underfill to passivation. Therefore, the wetting was not the controlling factor in adhesion of the system studied.

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Study on a 3D packaging structure with benzocyclobutene as a dielectric layer for radio frequency application

Geng

Ding

2009

2009 International Conference on Electronic Packaging Technology &Amp; High Density Packaging

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Effects of O/sub 2//C/sub 2/F/sub 6/ plasma descum with RF cleaning on via formation in MCM-D substrate using photosensitive BCB

Cited by 3 publications

References 3 publications

A wafer-scale packaging structure with monolithic microwave integrated circuits and passives embedded in a silicon substrate for multichip modules for radio frequency applications

A wafer-scale packaging structure with monolithic microwave integrated circuits and passives embedded in a silicon substrate for multichip modules for radio frequency applications

Surface property of passivation layer on integrated circuit chip and solder mask layer on printed circuit board

Study on a 3D packaging structure with benzocyclobutene as a dielectric layer for radio frequency application

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