Effects of nitrogen and argon plasma-immersion ion implantation on silicon and its oxidation

Rajkumer, R; Kumar, Mukesh; George, P.J.; Mukherjee, Subrata; Chari, Krishnan

doi:10.1016/s0257-8972(02)00102-0

Cited by 17 publications

(8 citation statements)

References 16 publications

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“…The interplay of the deposition and etching of the film in a typical CF 4 plasma process is schematically indicated with respect to the Si surface in Figure b. In contrast, Ar-based plasmas were considered relatively simple in terms of their constitution of a single ionized species (Ar + ) and the absence of chemical reactions. , It was hypothesized, e.g., as indicated in Figure c, that the charge treated surface layer could accommodate a high concentration of stable OH – groups and yield hydrophilicity. , The treatment was carried out under a constant gas flow of 30 sccm and a variety of experimental conditions incorporating variations of the plasma time (in the range of 60–600 s), power (in the range of 100–500 W), and pressure (in the range of 10–100 mTorr).…”

Section: Methodsmentioning

confidence: 99%

The Modulation of Electrokinetic Streaming Potentials of Silicon-Based Surfaces through Plasma-Based Surface Processing

et al. 2022

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A new plasma processing-based methodology for enhancing the streaming potential (V s ) that may be obtained in electrokinetic flows for a given pressure gradient over a silicon surface-based microchannel is indicated. The dependence of the V s on both the surface zeta potential and the electrolyte slip length was carefully determined through a series of experiments involving the variation of CF 4 -and Ar-based plasma parameters, incorporating pressure, exposure time, and power. It was determined through analytical estimates that, while the zeta potential is always increased, the slip length may be diminished under certain conditions. A record value of ∼0.1 mV/Pa was obtained using CF 4 plasma at 500 W, 10 mTorr, and 300 s of exposure. The implications of the work extend to the investigation of whether smooth surfaces may be effective for generating large V s 's for new modalities of electrical voltage sources in microfluidics-based applications.

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Section: Methodsmentioning

confidence: 99%

The Modulation of Electrokinetic Streaming Potentials of Silicon-Based Surfaces through Plasma-Based Surface Processing

et al. 2022

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“…Differently from the so far presented in the literature methods (e.g. 3,4), in which the classical implanters or the IIIP (Ion Immersion Implantation in Plasma) methods were used for the implantation, in this work we used typical r.f. (13.56 MHz) plasma planar reactor, usually applied for PECVD (Oxford Plasma Technology -Plasmalab 80 Plus).…”

Section: Methodsmentioning

confidence: 99%

Formation of Pedestal Oxynitride Layer by Extremely Shallow Nitrogen Implantation in Planar R.F. Plasma Reactor

et al. 2006

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Presented in this work experiments are a part of a broader study that examines the possibility of fabrication of pedestal oxynitride layers for high-K gate stacks by nitrogen implantation from r.f. plasma. The aim of this work was to study the influence of type of nitrogen gas source of nitrogen, r.f. power, temperature and implantation time on the oxynitride layer properties. The obtained layers were characterized by means of: ellipsometry, XPS and SIMS. In order to obtain dielectric layers suitable for electrical characterization methods, the plasma nitridation was followed by plasma oxidation process. The results of electrical characterization of test structures fabricated with investigated layers used as gate dielectric, are also discussed.

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“…In this study, the LAPS structure with nitrogen‐incorporated ceramic Sm 2 O 3 sensing membrane has been proposed to sense chloride ions. The nitrogen ions are introduced using the plasma immersion ion implantation (PIII) technique, which is an abundant and efficient implantation method . The treatment time is adjusted to change the concentration of implanted nitrogen ions within the Sm 2 O 3 film.…”

Section: Introductionmentioning

confidence: 99%

“…The nitrogen ions are introduced using the plasma immersion ion implantation (PIII) technique, which is an abundant and efficient implantation method. 26 The treatment time is adjusted to change the concentration of implanted nitrogen ions within the Sm 2 O 3 film. In KCl solution, the potassium ions can be detected by the pure…”

Section: Introductionmentioning

confidence: 99%

Light‐Addressable Potentiometric Sensor with Nitrogen‐Incorporated Ceramic Sm₂O₃ Membrane for Chloride Ions Detection

Wang

Lin

2014

J. Am. Ceram. Soc.

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A light‐addressable potentiometric sensor (LAPS) with ceramic samarium oxide (Sm2O3)‐sensing membrane treated by nitrogen plasma immersion ion implantation (PIII) has been proposed for chloride ion detection. For the pure Sm2O3‐LAPS, a potassium ion sensitivity of 39.21 mV/pK is obtained. With the nitrogen PIII treatment on Sm2O3‐sensing membrane, the N–O peak is observed by X‐ray photoelectron spectroscopy, implying the formation of positive charges, (N‐O)+ and (N‐O‐N)+, within the Sm2O3 film. The positive charges can attract the chloride ions to react with the surface sites of OH2+, achieving a superior chloride ion sensitivity of 36.17 mV/pCl for the Sm2O3‐LAPS with nitrogen PIII treatment. The LAPS structure with ceramic Sm2O3‐sensing membrane can be used for future biosensing applications, especially for the potassium and chloride ions detection in serum.

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Effects of nitrogen and argon plasma-immersion ion implantation on silicon and its oxidation

Cited by 17 publications

References 16 publications

The Modulation of Electrokinetic Streaming Potentials of Silicon-Based Surfaces through Plasma-Based Surface Processing

The Modulation of Electrokinetic Streaming Potentials of Silicon-Based Surfaces through Plasma-Based Surface Processing

Formation of Pedestal Oxynitride Layer by Extremely Shallow Nitrogen Implantation in Planar R.F. Plasma Reactor

Light‐Addressable Potentiometric Sensor with Nitrogen‐Incorporated Ceramic Sm₂O₃ Membrane for Chloride Ions Detection

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Effects of nitrogen and argon plasma-immersion ion implantation on silicon and its oxidation

Cited by 17 publications

References 16 publications

The Modulation of Electrokinetic Streaming Potentials of Silicon-Based Surfaces through Plasma-Based Surface Processing

The Modulation of Electrokinetic Streaming Potentials of Silicon-Based Surfaces through Plasma-Based Surface Processing

Formation of Pedestal Oxynitride Layer by Extremely Shallow Nitrogen Implantation in Planar R.F. Plasma Reactor

Light‐Addressable Potentiometric Sensor with Nitrogen‐Incorporated Ceramic Sm2O3 Membrane for Chloride Ions Detection

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Product

Resources

About

Light‐Addressable Potentiometric Sensor with Nitrogen‐Incorporated Ceramic Sm₂O₃ Membrane for Chloride Ions Detection