Effects of Neutron Irradiation on Electrical Performance of β-Ga<sub>2</sub> O<sub>3</sub> Schottky Barrier Diodes

Yue, Shaozhong; Zheng, Xuefeng; Hong, Yuehua; Zhang, Xiangyu; Zhang, Fang; Wang, Yingzhe; Ma, Xiaohua

doi:10.1109/ted.2023.3270124

Cited by 9 publications

(2 citation statements)

References 23 publications

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“…Note that the reverse current is suppressed compared to the reference up to the point of breakdown. This may indicate creation of disordered regions (Gossick zones) 43,[47][48][49] within the NiO because of neutron irradiation. We plan to examine single layers of NiO by high resolution electron microscopy to try to directly observe if such damage zones are present.…”

Section: Resultsmentioning

confidence: 99%

“…In the case of conventional Schottky rectifiers, the reverse breakdown voltage increases with neutron dose, due to a decrease in the effective carrier concentration in the drift region. 49 By sharp contrast, NiO/Ga 2 O 3 heterojunction rectifiers fabricated on the same epitaxial layer structures show significant decreases in reverse breakdown voltage because of the same neutron irradiations. There was little difference in the forward or low-bias reverse currents between the two structures and little significant change in reverse recovery characteristics.…”

Section: Discussionmentioning

confidence: 98%

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Comparison of 10 MeV Neutron Irradiation Effects on NiO/Ga₂O₃ Heterojunction Rectifiers and Ni/Au/Ga₂O₃ Schottky Rectifiers

Xia

Chiang

et al. 2023

ECS J. Solid State Sci. Technol.

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Neutrons generated through charge-exchange 9Be (p; ni) 9Be reactions, with energies ranging from 0-33 MeV and an average energy of ~9.8 MeV were used to irradiate conventional Schottky Ga2O3 rectifiers and NiO/Ga2O3 p-n heterojunction rectifiers to fluences of 1.1-2.2x1014 cm-2. The breakdown voltage was improved after irradiation for the Schottky rectifiers but was highly degraded for their NiO/Ga2O3 counterparts. This may be a result of extended defect zones within the NiO. After irradiation, the switching characteristics were degraded and irradiated samples of both types could not survive switching above 0.7A or 400V, whereas reference samples were robust to 1A and 1kV. The carrier removal rate in both types of devices was ~45 cm-1. The forward currents and on-state resistances were only slightly degraded by neutron irradiation.

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Section: Resultsmentioning

confidence: 99%

Section: Discussionmentioning

confidence: 98%

Comparison of 10 MeV Neutron Irradiation Effects on NiO/Ga₂O₃ Heterojunction Rectifiers and Ni/Au/Ga₂O₃ Schottky Rectifiers

Xia

Chiang

et al. 2023

ECS J. Solid State Sci. Technol.

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Radiation effects of high-fluence reactor neutron on Ni/ β -Ga2O3 Schottky barrier diodes

Zhou,

Chen,

et al. 2024

Applied Physics Letters

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This study investigates the broad-energy-spectrum reactor-neutron irradiation effects on the electrical characteristics of Ni/β-Ga2O3 Schottky barrier diodes (SBDs), where the irradiated neutron fluence was up to 1 × 1016 cm−2. On the one hand, the high neutron fluence of 1016 cm−2 resulted in a reduction in forward current density by two orders of magnitude and an extremely high on-resistance property due to the radiation-generated considerable series resistance in the SBD. On the other hand, the irradiation brought little influence on the Ni/β-Ga2O3 Schottky contact, since the extracted ideality factor and barrier height from temperature-dependent current–voltage (I–V–T) characteristics showed no significant changes after the radiation. Moreover, the capacitance–voltage (C–V) characterization revealed that the net carrier density in the β-Ga2O3 material was only reduced by 25% at the neutron fluence of 1015 cm−2 but a significant reduction by 2–3 orders at 1016 cm−2. Within the neutron fluence range of 2 × 1014 cm−2 up to 1016 cm−2, the carrier removal rates trended to be saturated with the increased fluences, following an exponential regular. In addition, the C–V measurement on the 1016 cm−2 irradiated sample exhibited an obvious frequency dispersion, and the extracted carrier distribution was not uniform.

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Synergistic effect of electrical bias and proton irradiation on the electrical performance of β-Ga2O3 p–n diode

Yue,

Wang,

Zheng

et al. 2024

Applied Physics Letters

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The synergistic impact of reverse bias stress and 3 MeV proton irradiation on the β-Ga2O3 p–n diode has been studied from the perspective of the defect in this work. The forward current density (JF) is significantly decreased with the increase in proton irradiation fluence. According to the deep-level transient spectroscopy results, the increase in the acceptor-like trap with an energy level of EC-0.75 eV within the β-Ga2O3 drift layer, which is most likely to be Ga vacancy-related defects, can be the key origin of the device degradation. The increase in these acceptor-like traps results in the carrier concentration reduction, which in turn leads to a decrease in JF. Furthermore, compared with the case of proton irradiation with no bias, the introduction of −100 V electrical stress induced a nearly double decrease in JF. Based on the capacitance–voltage (C–V) measurement, with the support of the electric field, the carrier removal rate increased from 335 to 600 cm−1. Similar to the above-mentioned phenomenon, the trap concentration also increased significantly. We propose a hypothesis elucidating the synergistic effect of electrical stress and proton irradiation through the behavior of recoil nuclei under the electric field.

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Effects of Neutron Irradiation on Electrical Performance of β-Ga₂ O₃ Schottky Barrier Diodes

Cited by 9 publications

References 23 publications

Comparison of 10 MeV Neutron Irradiation Effects on NiO/Ga₂O₃ Heterojunction Rectifiers and Ni/Au/Ga₂O₃ Schottky Rectifiers

Comparison of 10 MeV Neutron Irradiation Effects on NiO/Ga₂O₃ Heterojunction Rectifiers and Ni/Au/Ga₂O₃ Schottky Rectifiers

Radiation effects of high-fluence reactor neutron on Ni/ β -Ga2O3 Schottky barrier diodes

Synergistic effect of electrical bias and proton irradiation on the electrical performance of β-Ga2O3 p–n diode

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Effects of Neutron Irradiation on Electrical Performance of β-Ga2 O3 Schottky Barrier Diodes

Cited by 9 publications

References 23 publications

Comparison of 10 MeV Neutron Irradiation Effects on NiO/Ga2O3 Heterojunction Rectifiers and Ni/Au/Ga2O3 Schottky Rectifiers

Comparison of 10 MeV Neutron Irradiation Effects on NiO/Ga2O3 Heterojunction Rectifiers and Ni/Au/Ga2O3 Schottky Rectifiers

Radiation effects of high-fluence reactor neutron on Ni/ β -Ga2O3 Schottky barrier diodes

Synergistic effect of electrical bias and proton irradiation on the electrical performance of β-Ga2O3 p–n diode

Contact Info

Product

Resources

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Effects of Neutron Irradiation on Electrical Performance of β-Ga₂ O₃ Schottky Barrier Diodes

Comparison of 10 MeV Neutron Irradiation Effects on NiO/Ga₂O₃ Heterojunction Rectifiers and Ni/Au/Ga₂O₃ Schottky Rectifiers

Comparison of 10 MeV Neutron Irradiation Effects on NiO/Ga₂O₃ Heterojunction Rectifiers and Ni/Au/Ga₂O₃ Schottky Rectifiers