Effects of n-type modulation-doping barriers and a linear graded-composition GaInAsP intermediate layer on the 1.3μm AlGaInAs∕AlGaInAs strain-compensated multiple-quantum-well laser diodes

Abstract

Articles you may be interested in 1.3 μ m Ga 0.11 In 0.89 As 0.24 P 0.76 ∕ Ga 0.27 In 0.73 As 0.67 P 0.33 compressive-strain multiple quantum well with n -type modulation-doped GaInP intermediate-barrier laser diodes