Effects of Mo- and W-doping and annealing processing on the ferroelectric properties of sputtered (Bi, Pr)4Ti3O12 films

Lin, Wen‐Tai; Ko, Chih-Yuan

doi:10.1016/j.jcrysgro.2006.06.007

Cited by 5 publications

(10 citation statements)

References 34 publications

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“…Another contrary observation of an increase of preferred b -orientation with x in Bi 3.5 Pr 0.5 Ti 3− x M x O 12 (M = Mo and W) thin films on Pt/Ta/SiO 2 /Si substrates was reported by Lin et al The different results in these reports as compared to this work are attributed to the influence of the substrates acting as seeds and thus causing a preferred orientation. The different level and kind of lanthanoid substitutions, preparation temperature, and time might also be important parameters affecting orientation.…”

Section: Resultscontrasting

confidence: 87%

Preparation, Microstructure, and Ferroelectric Properties of Bi_3.25La_0.75Ti_3−xM_xO₁₂ (M = Mo, W, Nb, V) Ceramics

Tang

Kaskel

2009

J. Phys. Chem. C

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In this work, the fabrication and investigation of substituting higher-valence Mo 6+ for Ti 4+ ion on the B-site of La 3 +-doped Bi 4 Ti 3 O 12 [BLT] structure to form Bi 3.25 La 0.75 (Ti 1-x Mo x) 3 O 12 [BLTM] (when x = 0, 0.01, 0.03, 0.05 0.07, 0.09, and 0.10) ceramics were carried out. X-ray diffraction patterns of BLTM ceramics indicated an orthorhombic structure with lattice distortion, especially with a higher concentration of a MoO 3 dopant. Microstructural investigation showed that all ceramics composed mainly of plate-like grains. An increase in MoO 3 doping content increased the length and thickness of the grain but reduced the density of the ceramics. Electrical conductivity was found to decrease, while the dielectric constant increased with Mo 6+ doping concentration. Ferroelectric properties were found to be improved with increasing MoO 3 content and were optimized at x = 0.1.

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Section: Resultscontrasting

confidence: 87%

Preparation, Microstructure, and Ferroelectric Properties of Bi_3.25La_0.75Ti_3−xM_xO₁₂ (M = Mo, W, Nb, V) Ceramics

Tang

Kaskel

2009

J. Phys. Chem. C

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“…Therefore, Er 3+ –Yb 3+ –W 6+ cosubstitution significantly improved the ferroelectricity of the thin films. It has been reported that W 6+ ion substitution of B ‐site (Ti 4+ ions) can also effectively improve ferroelectric properties of other thin films such as (La 3+ , Nd 3+ , and Pr 3+ )‐doped BiT thin films, Pb(Zr,Ti)O 3 thin films, CaBi 4 Ti 4 O 15 thin films, and SrBi 2 Ta 2 O 9 thin films 15–17 . In BiT‐based thin films, A ‐site substitution of larger Bi 3+ ions by smaller rare‐earth ions in the pseudo‐perovskite layer can result in largely enhanced rotation of TiO 6 octahedra in the a – b plane and a shift of the octahedron along a axis, 27–29 whereas B ‐site substitution of larger Ti 4+ ions by highly valent W 6+ ions can decrease oxygen vacancies to reduce domain pinning, 25,26 and make the polar ions move more easily.…”

Section: Resultsmentioning

confidence: 99%

“…The defects usually act as traps to induce nonradiative transitions, and then results in emission degradation. [22][23][24] The high-valent W 61 substitution with proper concentration can decrease concentration of the oxygen vacancies in the host lattices, 25,26 [15][16][17] In BiT-based thin films, A-site substitution of larger Bi 31 ions by smaller rare-earth ions in the pseudo-perovskite layer can result in largely enhanced rotation…”

Section: Resultsmentioning

confidence: 99%

“…Our previous study indicated that Er/Yb codoped bismuth titanate thin films showed good upconversion photoluminescent properties while excited at 980 nm, but their ferroelectric properties such as remnant polarization values were still unsatisfactory 14 . It has been reported that B ‐site (Ti 4+ ions) substitution by high‐valent W 6+ ions can effectively improve ferroelectric properties of bismuth titanate [Bi 4 Ti 3 O 12 (BiT)]‐based thin films 15–17 . This motivated us to study A ‐site (Er 3+ and Yb 3+ ions) and B ‐site (W 6+ ions) cosubstituted bismuth titanate thin films with an aim to achieve combination of strong upconversion emission with good ferroelectric properties.…”

Section: Introductionmentioning

confidence: 99%

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Strong Upconversion Photoluminescence and Large Ferroelectric Polarization in Er³⁺–Yb³⁺–W⁶⁺ Triply Substituted Bismuth Titanate Thin Films Prepared by Chemical Solution Deposition

et al. 2011

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Strong upconversion photoluminescence and large ferroelectric polarization were observed for the first time in layered structure Er3+–Yb3+–W6+ triply substituted bismuth titanate thin films. The thin films were prepared on fused silica and Pt(111)/Ti/SiO2/Si substrates by chemical solution deposition. Two green emission bands and a red one were observed in the upconversion photoluminescence spectra for all the films pumped by a 980 nm laser diode, which correspond to 2H11/2, 4S3/2, and 4F9/2 to 4I15/2 transitions of Er3+ ions, respectively. A two‐photon energy‐transfer process was confirmed by the power dependence of emission intensity. Compared with that of Er3+–Yb3+‐substituted bismuth titanate thin films, the improved photoluminescence is related to the reduced defects such as oxygen vacancies due to B‐site (Ti4+) substitution by W6+ ions, while the large ferroelectric remnant polarization can be attributed to the increased structure distortion and the reduced oxygen vacancies due to cosubstitution of A‐site (Bi3+) and B‐site (Ti4+) by Er3+, Yb3+, and W6+ ions, respectively. The combination of the strong upconversion photoluminescence and the good ferroelectric properties in the thin films would open the possibility of realizing novel multifunctional optoelectronic integration device applications.

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“…Hexavalent substitution has recently been investigated as an important substituent and enhanced remanent polarization has been reported only with small substitution [19][20][21][22]. Therefore, with the objective to improve structural, dielectric and ferroelectric properties, molybdenum (Mo +6 ) has been chosen as a donor cation for partial replacement of the pentavalent tantalum (Ta +5 ) in SBT.…”

Section: Introductionmentioning

confidence: 99%

Ferroelectric and Piezoelectric Studies on Mo—Substituted SrBi₂Ta₂O₉ Ferroelectric Ceramics

Coondoo

Panwar

Puli

et al. 2011

Integrated Ferroelectrics

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Samples of compositions SrBi2 Mo x Ta 2-x O 9 (SBMT), with x = 0.0, 0.025, 0.050, 0.075, 0.10 have been synthesized by solid-state reaction method taking SrCO 3 , Bi 2 O 3 , Ta 2 O 5 and MoO 3 in their stoichiometric ratios. X-ray diffraction patterns of the samples confirm the formation of single phase layered perovskite structure in the samples with x up to 0.05. The effect of Mo +6 substitution on the dielectric behavior of SBT was studied by measuring the capacitance and tangential loss using an impedance analyzer (HP 4294A). The temperature dependence of dc conductivity vis-á-vis molybdenum content shows a decrease in conductivity, which is attributed to the suppression of oxygen vacancies. The ferroelectric and piezoelectric studies of the Mo substituted SBT ceramics show that the remanent polarization and d 33 values increase with increasing concentration of molybdenum.

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Effects of Mo- and W-doping and annealing processing on the ferroelectric properties of sputtered (Bi, Pr)4Ti3O12 films

Cited by 5 publications

References 34 publications

Preparation, Microstructure, and Ferroelectric Properties of Bi_3.25La_0.75Ti_3−xM_xO₁₂ (M = Mo, W, Nb, V) Ceramics

Preparation, Microstructure, and Ferroelectric Properties of Bi_3.25La_0.75Ti_3−xM_xO₁₂ (M = Mo, W, Nb, V) Ceramics

Strong Upconversion Photoluminescence and Large Ferroelectric Polarization in Er³⁺–Yb³⁺–W⁶⁺ Triply Substituted Bismuth Titanate Thin Films Prepared by Chemical Solution Deposition

Ferroelectric and Piezoelectric Studies on Mo—Substituted SrBi₂Ta₂O₉ Ferroelectric Ceramics

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Effects of Mo- and W-doping and annealing processing on the ferroelectric properties of sputtered (Bi, Pr)4Ti3O12 films

Cited by 5 publications

References 34 publications

Preparation, Microstructure, and Ferroelectric Properties of Bi3.25La0.75Ti3−xMxO12 (M = Mo, W, Nb, V) Ceramics

Preparation, Microstructure, and Ferroelectric Properties of Bi3.25La0.75Ti3−xMxO12 (M = Mo, W, Nb, V) Ceramics

Strong Upconversion Photoluminescence and Large Ferroelectric Polarization in Er3+–Yb3+–W6+ Triply Substituted Bismuth Titanate Thin Films Prepared by Chemical Solution Deposition

Ferroelectric and Piezoelectric Studies on Mo—Substituted SrBi2Ta2O9 Ferroelectric Ceramics

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Preparation, Microstructure, and Ferroelectric Properties of Bi_3.25La_0.75Ti_3−xM_xO₁₂ (M = Mo, W, Nb, V) Ceramics

Preparation, Microstructure, and Ferroelectric Properties of Bi_3.25La_0.75Ti_3−xM_xO₁₂ (M = Mo, W, Nb, V) Ceramics

Strong Upconversion Photoluminescence and Large Ferroelectric Polarization in Er³⁺–Yb³⁺–W⁶⁺ Triply Substituted Bismuth Titanate Thin Films Prepared by Chemical Solution Deposition

Ferroelectric and Piezoelectric Studies on Mo—Substituted SrBi₂Ta₂O₉ Ferroelectric Ceramics