Effects of microstructure of Ni barrier on bonding interface diffusion behaviors of Bi–Te-based thermoelectric material

Ekubaru, Yusufu; Sugahara, Tohru; Okajima, Michio; Nambu, S.; Suganuma, Katsuaki

doi:10.1016/j.jallcom.2019.152731

Cited by 15 publications

(6 citation statements)

References 24 publications

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“…Metallic electrodes such as Ni have been widely used in Bi 2 Te 3 TE devices, but the diffusion of Ni atoms into Bi 2 Te 3 causes interfacial reaction, which increases the interfacial resistivity and deteriorates the electro-thermal conversion performance. [31][32][33] Diffusion of magnetic metallic atoms also plays important roles in thermo-electro-magnetic materials, where magnetic impurities incorporated in bismuth chalcogenides can introduce local magnetic field and exchange interaction, which lead to quantum anomalous hall effect, [34,35] and novel thermo-electro-magnetic coupling effects. [36][37][38][39] Due to the weaker VDW bonding, the diffusion of magnetic atoms within the VDW gaps is energetically more favored than the diffusion across the quintuple layers (transquintuple-layer diffusion).…”

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confidence: 99%

In Situ Atomistic Insight into Magnetic Metal Diffusion across Bi_0.5Sb_1.5Te₃ Quintuple Layers

Cui

Zhao

et al. 2022

Adv Materials Inter

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Diffusion and occupancy of magnetic atoms in van der Waals (VDW) layered materials have significant impact on applications such as energy storage, thermoelectrics, catalysis, and topological phenomena. However, due to the weak VDW bonding, most research focus on in‐plane diffusion within the VDW gap, while out‐of‐plane diffusion has rarely been reported. Here, to investigate out‐of‐plane diffusion in VDW‐layered Bi2Te3‐based alloys, a Ni/Bi0.5Sb1.5Te3 heterointerface is synthesized by depositing magnetic Ni metal on a mechanically exfoliated Bi0.5Sb1.5Te3 (0001) substrate. Diffusion of Ni atoms across the Bi0.5Sb1.5Te3 quintuple layers is directly observed at elevated temperatures using spherical‐aberration‐corrected scanning transmission electron microscopy (STEM). Density functional theory calculations demonstrate that the diffusion energy barrier of Ni atoms is only 0.31–0.45 eV when they diffuse through Te3(Bi, Sb)3 octahedron chains. Atomic‐resolution in situ STEM reveals that the distortion of the Te3(Bi, Sb)3 octahedron, induced by the Ni occupancy, drives the formation of coherent NiM (M = Bi, Sb, Te) at the heterointerfaces. This work can lead to new strategies to design novel thermoelectric and topological materials by introducing magnetic dopants to VDW‐layered materials.

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confidence: 99%

In Situ Atomistic Insight into Magnetic Metal Diffusion across Bi_0.5Sb_1.5Te₃ Quintuple Layers

Cui

Zhao

et al. 2022

Adv Materials Inter

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“…Liu et al 36,37 observed that the Ni/Te interface reaction enhanced binding strength but resulted in Ni diffusion along the grain boundary into N-type Bi 2 Te 3 , leading to the formation of p-type (Bi 1−x Ni x ) 2 (Te, Se) 1−y and an increase in contact resistance. Yusufu et al 38 compared the effects of electroplated and sputtered Ni on Cu diffusion in n-type Bi 2 Te 3 , finding distinct diffusion mechanisms. Lin et al 39 used in situ scanning transmission electron microscopy (STEM) to reveal that Kirkendall holes formed due to different Ni diffusion rates caused cracks at the Ni−Bi 2 Te 3 interface.…”

Section: Introductionmentioning

confidence: 99%

“…Liu et al , observed that the Ni/Te interface reaction enhanced binding strength but resulted in Ni diffusion along the grain boundary into N-type Bi 2 Te 3 , leading to the formation of p-type (Bi 1– x Ni x ) 2 (Te, Se) 1– y and an increase in contact resistance. Yusufu et al . compared the effects of electroplated and sputtered Ni on Cu diffusion in n-type Bi 2 Te 3 , finding distinct diffusion mechanisms.…”

Section: Introductionmentioning

confidence: 99%

The Failure Mechanism of Micro Thermoelectric Devices under the Action of the Temperature Field

Lyu,

Yang,

Liu

et al. 2024

ACS Appl. Mater. Interfaces

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The micro thermoelectric device (m-TED) boasts features such as adjustable volume, straightforward structure, and precise, rapid temperature control, positioning it as the only current solution for managing the temperature of microelectronic systems. It is extensively utilized in 5G optical modules, laser lidars, and infrared detection. Nevertheless, as the size of the m-TED diminishes, the growing proportion of interface damages the device's operational reliability, constraining the advancement of the m-TED. In this study, we used commercially available bismuth telluride materials to construct the m-TED. The device's reliability was tested under various temperatures: −40, 85, 125, and 150 °C. By deconstructing and analyzing the devices that failed during the tests, we discovered that the primary cause of device failure was the degradation of the solder layer. Moreover, we demonstrated that encapsulating the device with polydimethylsiloxane (PDMS) could effectively delay the deterioration of its performance. This study sparks new insights into the service reliability of m-TEDs and paves the way for further optimizing device interface design and enhancing the device manufacturing process.

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“…17,26,31,32 Ni can interact with BST and BTS to form intermetallics, and the reaction is mainly controlled by Ni diffusion into the TE material matrix. 33,34 However, the interfacial reaction mechanism is still obscure as both BST and BTS have complicated chemical compositions, resulting in preferential reaction and phase separation at the atomic scale. Moreover, BT-based alloys with an anisotropic van der Waals (vdW) layered structure have demonstrated strong anisotropic electron and phonon transport properties.…”

Section: ■ Introductionmentioning

confidence: 99%

Atomic-Resolution Interfacial Reaction Mechanism between Bi₂Te₃-Based Alloys and Ni Electrodes

Xue,

Lu,

Cui

et al. 2024

ACS Appl. Mater. Interfaces

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Interdiffusion and solid–solid phase reaction at the interface between thermoelectric (TE) materials and the electrode critically influence interfacial transport properties and the overall energy conversion efficiency during service. Here, the microstructural evolution and diffusion mechanisms at the interfaces between the most widely used Bi2Te3-based TE materials, n-type Bi2Te2.7Se0.3 (BTS) and p-type Bi0.5Sb1.5Te3 (BST), and Ni electrodes were investigated at atomic resolution using spherical aberration-corrected scanning transmission electron microscopy (STEM). The BTS(0001)/Ni and BST(0001)/Ni interfaces were constructed by depositing Ni nanoparticles on mechanically exfoliated BTS and BST bulk materials and subsequent annealing. The interfacial reaction is initially dominated by Ni diffusion into the TE matrix to form NiAs-type NiM intermetallics, while Ni trans-quintuple-layer diffusion only occurs in Sb-rich BST. The Bi-rich BTS is more influenced by the Ni–Te preferential reaction, resulting in NiM abnormal grain growth and the formation of tilted and rotated interfaces. Bi diffusion into the BTS matrix forms a Bi double layer at the interface or Bi2[Bi2(Te,Se)3] as the annealing temperature increases, while Bi diffusion into the Ni thin film greatly accelerates the interfacial reaction rate, as elucidated by in situ heating STEM. The results provide essential structural details to understand and prevent the degradation of TE device performance.

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Effects of microstructure of Ni barrier on bonding interface diffusion behaviors of Bi–Te-based thermoelectric material

Cited by 15 publications

References 24 publications

In Situ Atomistic Insight into Magnetic Metal Diffusion across Bi_0.5Sb_1.5Te₃ Quintuple Layers

In Situ Atomistic Insight into Magnetic Metal Diffusion across Bi_0.5Sb_1.5Te₃ Quintuple Layers

The Failure Mechanism of Micro Thermoelectric Devices under the Action of the Temperature Field

Atomic-Resolution Interfacial Reaction Mechanism between Bi₂Te₃-Based Alloys and Ni Electrodes

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Effects of microstructure of Ni barrier on bonding interface diffusion behaviors of Bi–Te-based thermoelectric material

Cited by 15 publications

References 24 publications

In Situ Atomistic Insight into Magnetic Metal Diffusion across Bi0.5Sb1.5Te3 Quintuple Layers

In Situ Atomistic Insight into Magnetic Metal Diffusion across Bi0.5Sb1.5Te3 Quintuple Layers

The Failure Mechanism of Micro Thermoelectric Devices under the Action of the Temperature Field

Atomic-Resolution Interfacial Reaction Mechanism between Bi2Te3-Based Alloys and Ni Electrodes

Contact Info

Product

Resources

About

In Situ Atomistic Insight into Magnetic Metal Diffusion across Bi_0.5Sb_1.5Te₃ Quintuple Layers

In Situ Atomistic Insight into Magnetic Metal Diffusion across Bi_0.5Sb_1.5Te₃ Quintuple Layers

Atomic-Resolution Interfacial Reaction Mechanism between Bi₂Te₃-Based Alloys and Ni Electrodes