Effects of Mg Doping on the Performance of InGaN Films Made by Reactive Sputtering

Kuo, Dong‐Hau; Li, Cheng-Che; Tuan, Thi Tran Anh; Yen, Wei-Chun

doi:10.1007/s11664-014-3406-9

Cited by 8 publications

(8 citation statements)

References 28 publications

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“…By SEM analysis, the thicknesses of Pt and Al layers were~250 nm and the thickness of both p-In x Ga 1−x N films was~0.6 µm. [10,21]. In a similar result, Wagner et al reported the composition dependence of the band gap energy of the strained In x Ga 1−x N layers grown by MOCVD.…”

Section: Structural and Electrical Characteristicsmentioning

confidence: 57%

“…The investigation of high-quality doping in GaN and InGaN semiconductors by incorporating elements such as Zn, and Cu, Mg for p-GaN behavior, and its alloys had reported [4][5][6][7][8]. The success of Mg doping in forming p-In x Ga 1−x N films is an important factor for developing electric devices, a photo detector, and solar cell devices [7][8][9][10]. Si wafer has often been used for the growth of GaN, InGaN, and their alloys for applications in photo-detector, solar cells, and electronic devices.…”

Section: Gan and Ingan Have Excellent Characteristics Such As High Comentioning

confidence: 99%

“…By using steel masks with the square size of 1 mm 2 , these electrodes were deposited at 200 • C, with RF power of 80W for 30 min on top of p-In x Ga 1−x N films and n-Si substrate. The detail procedure for creating the p-GaN and p-InGaN films, made by RF reactive sputtering, can be referred to our previous works [10][11][12]21].…”

Section: Gan and Ingan Have Excellent Characteristics Such As High Comentioning

confidence: 99%

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Electrical Characterization of RF Reactive Sputtered p–Mg-InxGa1−xN/n–Si Hetero-Junction Diodes without Using Buffer Layer

et al. 2019

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The modeling of p–InxGa1−xN/n–Si hetero junction diodes without using the buffer layer were investigated with the “top-top” electrode. The p–Mg-GaN and p–Mg-In0.05Ga0.95N were deposited directly on the n–Si (100) wafer by the RF reactive sputtering at 400 °C with single cermet targets. Al and Pt with the square size of 1 mm2 were used for electrodes of p–InxGa1−xN/n–Si diodes. Both devices had been designed to prove the p-type performance of 10% Mg-doped in GaN and InGaN films. By Hall measurement at the room temperature (RT), the holes concentration and mobility were determined to be Np = 3.45 × 1016 cm−3 and µ = 145 cm2/V·s for p–GaN film, Np = 2.53 × 1017 cm−3, and µ = 45 cm2/V·s for p–InGaN film. By the I–V measurement at RT, the leakage currents at −5 V and turn-on voltages were found to be 9.31 × 10−7 A and 2.4 V for p–GaN/n–Si and 3.38 × 10−6 A and 1.5 V for p–InGaN/n–Si diode. The current densities at the forward bias of 20 V were 0.421 and 0.814 A·cm−2 for p–GaN/n–Si and p–InGaN/n–Si devices. The electrical properties were measured at the temperature range of 25 to 150 °C. By calculating based on the TE mode, Cheungs’ and Norde methods, and other parameters of diodes were also determined and compared.

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Section: Structural and Electrical Characteristicsmentioning

confidence: 57%

Section: Gan and Ingan Have Excellent Characteristics Such As High Comentioning

confidence: 99%

Section: Gan and Ingan Have Excellent Characteristics Such As High Comentioning

confidence: 99%

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Electrical Characterization of RF Reactive Sputtered p–Mg-InxGa1−xN/n–Si Hetero-Junction Diodes without Using Buffer Layer

et al. 2019

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“…In addition to MSE-growth of doped GaN using separate dopant sources, it is also possible to fabricate cermet sputtering target with the dopant directly incorporated within the target. Both GaN n-doping using Sn [68] and p-doping [69][70][71][72][73] using Mg and Zn have been demonstrated. The dopant concentration can be controlled either by varying the dopant composition inside the cermet target, or by adjusting the substrate temperature during deposition.…”

Section: Doping and Fabrication Of Iii-nitride Devices Grown Using Msementioning

confidence: 99%

Review of GaN Thin Film and Nanorod Growth Using Magnetron Sputter Epitaxy

et al. 2020

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Magnetron sputter epitaxy (MSE) offers several advantages compared to alternative GaN epitaxy growth methods, including mature sputtering technology, the possibility for very large area deposition, and low-temperature growth of high-quality electronic-grade GaN. In this article, we review the basics of reactive sputtering for MSE growth of GaN using a liquid Ga target. Various target biasing schemes are discussed, including direct current (DC), radio frequency (RF), pulsed DC, and high-power impulse magnetron sputtering (HiPIMS). Examples are given for MSE-grown GaN thin films with material quality comparable to those grown using alternative methods such as molecular-beam epitaxy (MBE), metal–organic chemical vapor deposition (MOCVD), and hydride vapor phase epitaxy (HVPE). In addition, successful GaN doping and the fabrication of practical devices have been demonstrated. Beyond the planar thin film form, MSE-grown GaN nanorods have also been demonstrated through self-assembled and selective area growth (SAG) method. With better understanding in process physics and improvements in material quality, MSE is expected to become an important technology for the growth of GaN.

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“…P-type doping of III-nitrides was also achieved by sputtering [75,[126][127][128][129][130][131][132]. Arakawa et al [126] grew Mg-doped GaN layers by PSD at 480 °C with Mg concentration varying from 7.9×10 17 to 6.1×10 19 cm −3 , as determined by SIMS.…”

Section: Doping Of Iii-nitrides Grown By Sputteringmentioning

confidence: 99%

Emergence of high quality sputtered III-nitride semiconductors and devices

Izyumskaya¹,

Avrutin²,

Ding³

et al. 2019

Semicond. Sci. Technol.

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This article provides an overview of recent development of sputtering method for high-quality III-nitride semiconductor materials and devices. Being a mature deposition technique widely employed in semiconductor industry, sputtering offers many advantages such as low cost, relatively simple equipment, non-toxic raw materials, low process temperatures, high deposition rates, sharp interfaces, and possibility of deposition on large-size substrates, including amorphous and flexible varieties. This review covers two major research directions: (1) ex situ sputtered AlN buffers to be used for subsequent growth of GaN-based structures by conventional techniques, such as metal-organic chemical vapor deposition (MOCVD), hydride vapor phase epitaxy (HVPE), or molecular beam epitaxy (MBE), and (2) deposition of the entire III-nitride layered stacks and device structures by sputtering. Replacing conventional in situ GaN or AlN buffer layers with ex situ sputtered AlN buffers for MOCVD, HVPE, or MBE growth of IIInitride films on sapphire and silicon substrates results in the improved crystal quality through reduction in dislocation density and residual strain. Extensive efforts in the field of sputter deposition of III-nitrides resulted in crystalline quality of sputtered III-nitride films compatible with that of MOCVD and MBE grown layers despite the lower temperatures used in sputtering. For example, sputtering techniques made it possible to achieve GaN layers heavily doped with Si and Ge to electron concentrations in mid-10 20 cm −3 range with mobilities exceeding 100 cm 2 V −1 s −1 , resulting in conductivities as high as those of benchmark transparent conducting oxides such as indium tin oxide (ITO). For moderate levels of doping with Si, mobilities comparable to state-of-the-art MOCVD-grown material have been demonstrated (up to ∼1000 cm 2 V −1 s −1 ). The first promising results have been reported for devices (light emitters and field effect transistors) entirely produced by sputtering.

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Effects of Mg Doping on the Performance of InGaN Films Made by Reactive Sputtering

Cited by 8 publications

References 28 publications

Electrical Characterization of RF Reactive Sputtered p–Mg-InxGa1−xN/n–Si Hetero-Junction Diodes without Using Buffer Layer

Electrical Characterization of RF Reactive Sputtered p–Mg-InxGa1−xN/n–Si Hetero-Junction Diodes without Using Buffer Layer

Review of GaN Thin Film and Nanorod Growth Using Magnetron Sputter Epitaxy

Emergence of high quality sputtered III-nitride semiconductors and devices

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