Effects of low-fluence swift iodine ion bombardment on the crystallization of ion-beam-synthesized silicon carbide

Abstract

Articles you may be interested inGrowth of silicon quantum dots by oxidation of the silicon nanocrystals embedded within silicon carbide matrix AIP Advances 4, 107106 (2014); 10.1063/1.4897378 Growth of silicon nanocrystallites in amorphous silicon carbide thin films by aluminum induced crystallization AIP Conf. Proc. 1536, 161 (2013); 10.1063/1.4810150 Influence of substrate temperature on growth of nanocrystalline silicon carbide by reactive magnetron sputtering J. Appl. Phys. 98, 024313 (2005); 10.1063/1.1985975 Low temperature deposition of nanocrystalline silicon carbide films by plasma enhanced chemical vapor deposition and their structural and optical characterization J. Appl. Phys. 94, 5252 (2003); 10.1063/1.1609631Polycrystallization and surface erosion of amorphous GaN during elevated temperature ion bombardment Ion beam synthesis using high-fluence carbon ion implantation in silicon in combination with subsequent or in situ thermal annealing has been shown to be able to form nanocrystalline cubic SiC ͑3C-SiC͒ layers in silicon. In this study, a silicon carbide layer was synthesized by 40-keV 12 C + implantation of a p-type ͑100͒ Si wafer at a fluence of 6.5ϫ 10 17 ions/ cm 2 at an elevated temperature. The existence of the implanted carbon in Si substrate was investigated by time-of-flight energy elastic recoil detection analysis. The SiC layer was subsequently irradiated by 10-30 MeV 127 I ions to a very low fluence of 10 12 ions/ cm 2 at temperatures from 80 to 800°C to study the effect on the crystallization of the SiC layer. Infrared spectroscopy and Raman scattering measurement were used to monitor the formation of SiC and detailed information about the SiC film properties was obtained by analyzing the peak shape of the Si-C stretching mode absorption. The change in crystallinity of the synthesized layer was probed by glancing incidence x-ray diffraction measurement and transmission electron microscopy was also used to confirm the results and to model the crystallization process. The results from all these measurements showed in a coherent way that the synthesized structure was a polycrystalline layer with nanometer sized SiC crystals buried in a-Si matrix. The crystallinity of the SiC layer was enhanced by the low-fluence swift heavy ion bombardment and also favored by higher energy, higher fluence, and higher substrate temperature. It is suggested that electronic stopping plays a dominant role in the enhancement.

Structural changes induced by heavy ion irradiation in titanium silicon carbide

“…In other word, if an electronic stopping power threshold for the formation of latent tracks in this material exists, it would be greater than 28 keV nm À1 . This result is not proper to Ti 3 SiC 2 since most of metals [46,47], but also some ceramics such as SiC [48][49][50] or TiC and TiSi 2 (secondary phases present in the samples, which do not seem to be affected by electronic interactions either) require huge electronic energy loss to be damaged by such interactions.…”

Application of silicon carbide temperature monitors in 49-2 swimming-pool test reactor

“…[16], assuming that the absorption coefficient of the Cu Kα lines in SiC is 211 cm −1 . [17] The penetration depth for ω = 3 • , averaged over the range of the measured diffraction angles, is estimated to be 2.33 µm. The GIXRD measurements were repeated after each sequence of sample annealing.…”

“…The electrical resistivity method is also superior in measuring temperature with very low neutron fluences. For instance, the irradiation temperature was successfully estimated by electrical analysis of SiC with a neutron fluence of 1.5×10 17 n/cm 2 (E > 0.18 MeV), [11] whereas neutron fluences of > 1.5 × 10 19 n/cm 2 are usually required for the other methods based on structural changes in SiC, such as XRD. [3,4] Despite many advantages, the acquisition of irradiation temperature from a SiC monitor needs repetitive sample testing after sequential annealing processes.…”

Identification of Sublattice Damages in Swift Heavy Ion Irradiated N-Doped 6H-SiC Polytype Studied by Solid State NMR

“…In this regard, current research is focused on studying the effects of different dopants and radiation damages in doped silicon carbide materials. Even though a number of characteristic investigations on irradiated 6H-SiC have already been reported, − detailed insight into the damage accumulation mechanism, due to fast moving ions at high-energy regions, has not been gathered. Furthermore, the mechanism of energy transfer and subsequent defect productions in a semiconductor are not clearly understood.…”