“…Although high laser pulse energy generally results in high success yield, better MRP, and low background, extreme high energy leads to surface migration, complex ion generation, and nonuniform spatial evaporation behavior. The stoichiometry deficiency observed in APT analyses of nitrides and oxide at high laser pulse energy is well known (Devaraj et al, 2013;Kinno et al, 2014;Santhangopalan et al, 2015). For example, in the case of GaN, at the lowest laser energies, the apparent composition is nitrogen-rich, while higher laser energies results in gallium-rich (i.e., nitrogen-deficient) (Gu et al, 2013;Riley et al, 2014;Sanford et al, 2014).…”