Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise

Zade, Dariush; Sato, Setsuko; Kakushima, Kuniyuki; Srivastava, Anshuman; Ahmet, Parhat; Tsutsui, Kazuo; Nishiyama, Akira; Sugii, Nobuyuki; Natori, Kenji; Hattori, Takeo; Sarkar, Chandan Kumar

doi:10.1016/j.microrel.2010.11.004

Cited by 9 publications

(2 citation statements)

References 21 publications

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“…On the other hand, the oxygen vacancies also assist in the diffusion of substrate Si into the La 2 O 3 layer; a relatively low-k interfacial silicate layer which limits the smallest achievable EOT would be formed [6]. Using certain alloy forms or complex oxides where the desirable electrical properties can be tailored is a promising technique [1,[7][8][9]. Meanwhile, a special measure for overcoming the high oxygen vacancies of high-k materials based on the oxygen chemical potential control to the film was proposed recently [10][11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Improving the electrical characteristics of MOS transistors with CeO2/La2O3 stacked gate dielectric

Yang

Wong

Kakushima

2012

Microelectronics Reliability

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Section: Introductionmentioning

confidence: 99%

Improving the electrical characteristics of MOS transistors with CeO2/La2O3 stacked gate dielectric

Yang

Wong

Kakushima

2012

Microelectronics Reliability

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“…In this work, a novel memory device based on the monolayer MoS 2 was proposed utilizing a lanthanum incorporation high-k dielectric to provide capture traps [ 24 , 25 ]. The memory cells exhibit an impressive performance with large memory windows of more than 3 v (operating voltage from −6 to 6 v and back to −6 v) and high program/erase radio of approximately 10 3 applied 1 ms voltage pulse.…”

Section: Introductionmentioning

confidence: 99%

Comprehensive Performance Quasi-Non-Volatile Memory Compatible with Large-Scale Preparation by Chemical Vapor Deposition

et al. 2020

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Two-dimensional materials with atomic thickness have become candidates for wearable electronic devices in the future. Graphene and transition metal sulfides have received extensive attention in logic computing and sensing applications due to their lower power dissipation, so that their processes have been relatively mature for large-scale preparation. However, there are a few applications of two-dimensional materials in storage, which is not in line with the development trend of integration of storage and computing. Here, a charge storage quasi-non-volatile memory with a lanthanum incorporation high-k dielectric for next-generation memory devices is proposed. Thanks to the excellent electron capture capability of LaAlO3, the MoS2 memory exhibits a very comprehensive information storage capability, including robust endurance and ultra-fast write speed of 1 ms approximately. It is worth mentioning that it exhibits a long-term stable charge storage capacity (refresh time is about 1000 s), which is 105 times that of the dynamic random access memory (refresh time is on a milliseconds timescale) so that the unnecessary power dissipation greatly reduces caused by frequent refresh. In addition, its simple manufacturing process makes it compatible with various current two-dimensional electronic devices, which will greatly promote the integration of two-dimensional electronic computing.

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Lanthanum oxide nanostructured films synthesized using hot dense and extremely non-equilibrium plasma for nanoelectronic device applications

et al. 2013

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Effects of La2O3 incorporation in HfO2 gated nMOSFETs on low-frequency noise

Cited by 9 publications

References 21 publications

Improving the electrical characteristics of MOS transistors with CeO2/La2O3 stacked gate dielectric

Improving the electrical characteristics of MOS transistors with CeO2/La2O3 stacked gate dielectric

Comprehensive Performance Quasi-Non-Volatile Memory Compatible with Large-Scale Preparation by Chemical Vapor Deposition

Lanthanum oxide nanostructured films synthesized using hot dense and extremely non-equilibrium plasma for nanoelectronic device applications

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