Effects of interfacial layer growth on the electrical characteristics of thin titanium oxide films on silicon

Lee, Byoung Hun; Jeon, Young‐Jin; Zawadzki, K.; Qi, Wen Jie; Lee, John

doi:10.1063/1.124089

Cited by 121 publications

(59 citation statements)

References 14 publications

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“…Plasma processes are able to deposit thin dielectric films at low temperatures in short times, so much effort has been made to get films with device characteristics from plasma-excited gases. 13,[21][22][23] This plasma can be generated by different procedures; among them the electron cyclotron resonance plasma method ͑in the following ECR͒ shows various advantages:…”

Section: Introductionmentioning

confidence: 99%

Bonding configuration and density of defects of SiOxHy thin films deposited by the electron cyclotron resonance plasma method

Andrés

Prado

Mártil

et al. 2003

Journal of Applied Physics

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The composition, bonding configuration, hydrogen content, and paramagnetic defects of SiO x H y thin films were studied. Films were deposited by the electron cyclotron resonance plasma method at room temperature using SiH 4 and O 2 as precursor gases. The film composition was measured by heavy ion elastic recoil detection analysis and energy dispersive x-ray spectroscopy. Suboxide films with compositions ranging from SiO 2 to SiH 0.38 were obtained. Infrared spectroscopy showed the presence of different Si-O and Si-H vibration modes. The usual estimation of the oxygen to silicon ratio by the wave number of the Si-O-Si stretching band was not accurate for films far from stoichiometry. These off-stoichiometric films also showed a broader Si-O-Si stretching peak than the stoichiometric ones, indicating a higher bonding disorder. The position of the Si-O-Si bending and rocking modes did not depend on the film composition. On the other hand, the peak position of the Si-H modes were found strongly dependent on the Si environment. By single-wavelength ellipsometry at ϭ632.8 nm the refractive index n was found to range between 1.45 (SiO 2 ) and 2.04 (SiO 0.06 H 0.36 ). Electron spin resonance measurements showed that stoichiometric films presented the well known EЈ center ("SiϵO 3 ) with concentrations in the 10 16 -10 17 cm Ϫ3 range, while for Si-rich films (xӶ1) the Si dangling bond center (Si DB , "SiϵSi 3 ) was the only detectable defect, with concentrations in the 10 18 -10 19 cm Ϫ3 range. In near-stoichiometric films both EЈ and Si DB centers were found.

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Section: Introductionmentioning

confidence: 99%

Bonding configuration and density of defects of SiOxHy thin films deposited by the electron cyclotron resonance plasma method

Andrés

Prado

Mártil

et al. 2003

Journal of Applied Physics

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“…[5,12,13] With reference to factors affecting the physical properties, an interesting aspect in TiO 2 growth has been the stability of various crystallographic phases such as anatase and rutile. These phases possess different electro-optical properties.…”

Section: Introductionmentioning

confidence: 99%

“…[1,4,12,14,17] The composition of the substrate may also have an influenceÐit has been noted that, at rather low temperatures (around 300 C), high Al 2 O 3 and Na 2 O contents in the substrate material favor the formation of rutile and anatase phases, respectively. [7] Recently, rutile TiO 2 has been produced by low-pressure CVD from titanium-tert-butoxide on SnO 2 (of rutile structure) substrates at temperatures as low as 290 C and on glass at 322 C. [4] Anatase and rutile thin films have been obtained by physical methods such as reactive sputtering [6,13] and electron beam evaporation, [5] or by various chemical methods such as ambient air hydrolysis of metal precursors, [9] hydrolysis in aqueous medium, [2,8] chemical beam epitaxy (CBE), [10] and CVD. [ sors have been used in CVD, including b-diketonate complexes, [1,18] TiCl 4 , [9,16,19] Ti(NO 3 ) 4 , [14] Ti(OC 2 H 5 ) 4 , [12] or Ti(OC 3 H 7 ) 4 .…”

Section: Introductionmentioning

confidence: 99%

Atomic Layer Deposition of Titanium Oxide from TiI4 and H2O2

Kukli

Ritala

Schuisky

et al. 2000

Chem. Vap. Deposition

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TiO 2 thin films have been grown on amorphous soda lime glass and polycrystalline silicon substrates from TiI 4 and H 2 O 2 by atomic layer deposition (ALD) in the temperature range 250±490 C. The film growth rate and refractive index increased linearly with growth temperature up to 300 C. Between 300 C and 400 C, the film growth rate tended to stabilize. Above 400 C, there was a further rapid increase in the growth rate, together with a corresponding increase in the thickness profile. The refractive index reached 2.70±2.75 in the films grown above 300 C. The films contained low amounts of residual hydrogen and were virtually iodine-free. When deposited below 300 C and above 325 C, the films contained weakly crystallized, but still distinct, anatase and rutile phases, respectively. Reflective high-energy electron diffraction (RHEED) studies revealed that the uppermost layers of the films grown on silicon at 275 C, 325 C, and 425 C contained anatase phase, regardless of deposition temperature. In the temperature range 300±325 C, a transition region was established where either the films became less ordered, or they contained rather strongly ordered, but unstable, suboxide phases. The suboxide phase, when present, was transformed into a mixture of anatase and rutile when stored in air at room temperature.

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“…The most common phases are anatase and rutile phases whose dielectric constants are 48 and 89, respectively [1]. The anatase phase is normally formed around 600 • C, while transformation to rutile phase occurs around 800 • C [1,[14][15][16][17]. In addition, the anatase phase has an indirect band gap, whereas the rutile phase has a direct band gap [15,16].…”

Section: Introductionmentioning

confidence: 99%

A comparative study on the electrical characteristics of Au/n-Si structures with anatase and rutile phase TiO2 interfacial insulator layer

Bengi

Aydemir

Altındal

et al. 2010

Journal of Alloys and Compounds

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Effects of interfacial layer growth on the electrical characteristics of thin titanium oxide films on silicon

Cited by 121 publications

References 14 publications

Bonding configuration and density of defects of SiOxHy thin films deposited by the electron cyclotron resonance plasma method

Bonding configuration and density of defects of SiOxHy thin films deposited by the electron cyclotron resonance plasma method

Atomic Layer Deposition of Titanium Oxide from TiI4 and H2O2

A comparative study on the electrical characteristics of Au/n-Si structures with anatase and rutile phase TiO2 interfacial insulator layer

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