2008
DOI: 10.1016/j.apsusc.2007.10.096
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Effects of interface on the dielectric properties of Ba0.6Sr0.4TiO3 thin film capacitors

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Cited by 21 publications
(7 citation statements)
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“…It is shown that the appearing Curie temperature is strongly reduced by increasing the thickness of a dead layer. The presence of an interfacial dead layer could be confirmed by a study with thin films of different thickness, increasing the contribution of the dead layer in the permittivity [26][27][28], coupled with Transmission Electronic Microscopy at the interface region [29,30]. Dielectric permittivity and losses measured at 10kHz as a function of external dc electric field at ambient conditions have been performed (Fig.…”
Section: 2-dielectric Measurements At Low Frequencymentioning
confidence: 84%
“…It is shown that the appearing Curie temperature is strongly reduced by increasing the thickness of a dead layer. The presence of an interfacial dead layer could be confirmed by a study with thin films of different thickness, increasing the contribution of the dead layer in the permittivity [26][27][28], coupled with Transmission Electronic Microscopy at the interface region [29,30]. Dielectric permittivity and losses measured at 10kHz as a function of external dc electric field at ambient conditions have been performed (Fig.…”
Section: 2-dielectric Measurements At Low Frequencymentioning
confidence: 84%
“…More details have been described in the previous literature [20]. Before spin coating on the 3 (BZT) thin films grown on Pt/Ti/SiO 2 /Si(1 0 0) substrates were prepared by chemical solution deposition. The structural and surface morphology of BZT thin films has been studied by X-ray diffraction (XRD) and scanning electron microscope (SEM).…”
Section: Methodsmentioning
confidence: 99%
“…Barium strontium titanate (Ba, Sr)TiO 3 (BST) thin films have recently become very attractive for applications in decoupling capacitors, storage capacitors, and dielectric field tunable elements for high frequency devices [1][2][3]. The high dielectric constant and low loss make BST one of the promising candidates for DRAM and tunable microwave device applications.…”
Section: Introductionmentioning
confidence: 99%
“…Therefore, low loss and low cost microwave phase shifters are required to improve performance and reduce the cost of phase arrays to ensure widespread application. BaSrTiO 3 (BST) thin films have been investigated as a potential low cost voltage tunable element for microwave circuit applications because of their high tunability, relatively low loss, and fast switching speed [1][2][3][4][5][6][7]. At present, several groups have implemented phase shifters using BST thin films [8][9][10][11][12][13].…”
Section: Introductionmentioning
confidence: 99%