Effects of Interface Al[sub 2]O[sub 3] Passivation Layer for High-k HfO[sub 2] on GaAs

Suh, Dong Chan; Cho, Young Dae; Ko, Dae Hong; Lee, Yong-Shik; Chung, Kwun Bum; Cho, Mann Ho

doi:10.1149/1.3516615

Cited by 12 publications

(12 citation statements)

References 16 publications

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“…[3][4][5][6][7] III-V MOS devices with epitaxial dielectric layers having a low D it have been reported. [3][4][5][6][7] III-V MOS devices with epitaxial dielectric layers having a low D it have been reported.…”

Section: Introductionmentioning

confidence: 99%

The impact of atomic layer deposited SiO₂passivation for high-k Ta_1−xZr_xO on the InP substrate

Mahata

Yoon

et al. 2015

J. Mater. Chem. C

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Metal-oxide-semiconductor (MOS) capacitors with an amorphous Ta 1Àx Zr x O composite gate dielectric film and a SiO 2 passivation layer were fabricated on an indium phosphide (InP) substrate. To investigate the impact of the passivation layer, the interfacial chemical, physical and electrical properties of the Ta 1Àx Zr x O/InP and Ta 1Àx Zr x O/SiO 2 /InP MOS structures were studied in detail. Electrical conductivity measurements combined with chemical bonding analysis using X-ray photoelectron spectroscopy (XPS) and electron dispersive spectroscopy (EDS) were conducted in order to evaluate the suitability of a Ta 1Àx Zr x O alloy as a gate dielectric film for an InP substrate. XPS results showed that the Ta 1Àx Zr x O film retained its insulating characteristics and was thermally stable even after annealing at 500 1C. However, Fermi-level pinning and significant diffusion of indium through the Ta 1Àx Zr x O were observed. The diffusion of In was remarkably reduced after introducing the SiO 2 passivation layer, which resulted in an overall reduction in interfacial layer thickness. Parallel conductance contour measurements showed that the SiO 2 passivation layer resulted in unpinning of the Fermi-level. The introduction of a SiO 2 passivation layer with the Ta 1Àx Zr x O composite gate dielectric film was found to provide remarkably improved dielectric performance, which was mainly attributed to reduced In diffusion and the passivation of interfacial and bulk dielectric defects.

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Section: Introductionmentioning

confidence: 99%

The impact of atomic layer deposited SiO₂passivation for high-k Ta_1−xZr_xO on the InP substrate

Mahata

Yoon

et al. 2015

J. Mater. Chem. C

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“…It matched well with the expected production of Ga 2 O 3 phase accompanied by the thermal reduction of As 2 O 3 as described in equation 1 and also with the recent Suh et al's report. 10 However, after the TMA pretreatment, the amount of Ga-oxide bonds was significantly reduced by the self-cleaning mechanism, similar to the As-oxide case, thereby demonstrating the effectiveness of the TMA cleaning method. In addition, a notable suppression of the Ga-oxide bond formation was observed even after PDA at 700 • C as the TMA treatment cycle was increased.…”

Section: Resultsmentioning

confidence: 79%

“…The substrate element outdiffusion (Ga and/or As) was presumed to be the main origin for the observed thermal CET instability of HfO 2 on the GaAs system. 10,19 According to the aforementioned XPS and TOF-SIMS results (see Figs. 3 and 4), Ga diffusion followed by Ga-O bond formation was revealed to be more significant than As diffusion during PDA.…”

Section: Resultsmentioning

confidence: 99%

“…They claimed that the interfacial Al 2 O 3 layer works as a diffusion barrier for the Ga and As atoms during the postdeposition annealing (PDA), leading to an enhancement of the thermal stability. 10,11 However, as an adverse effect, the insertion of the lower k, Al 2 O 3 interfacial layer into the HfO 2 /GaAs interface may increase the apparent capacitance equivalent thickness (CET), thus limiting the further scaling of the high-k stack in the future.…”

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confidence: 99%

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Thermal Stability of ALD-HfO₂/GaAs Pretreated with Trimethylaluminium

Byun

Lee

et al. 2011

J. Electrochem. Soc.

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The simultaneous self-cleaning and passivation of an as-received GaAs substrate using trimethylaluminium (TMA) pretreatment before the atomic layer deposition (ALD) of HfO 2 was systematically investigated. The change of the interfacial characteristics was probed as a function of the number of treatment cycles and the post-deposition annealing temperature and related with various electrical properties of the HfO 2 film. The TMA pretreatment removed the Ga-and As-oxides more effectively than the ALD-HfO 2 process, which reduced the amount of frequency dispersion. In addition, compared to the As case, it showed more predominant suppression of both Ga out-diffusion and Ga-O bond formation, which is believed to have delayed the thermal degradation of the capacitance equivalent thickness (CET). The optimal number of TMA treatment exhibited the best thermal stability without increasing the as-deposited CET.

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“…Therefore, it can be concluded that the Al 2 O 3 layer can prevent the diffusion of the Ga, Si, and La atoms from the LGS substrate to film electrode and the ZnO layer cannot prevent the atoms’ diffusion. The reduction of the diffusion in Al 2 O 3 /Pt/Al 2 O 3 /LGS sample was attributed to the higher chemical stability of Al 2 O 3 [13,14,15]. Until now, the Al 2 O 3 /Pt-Ni/Al 2 O 3 film electrode [11] has demonstrated that the Al 2 O 3 film can be used as a suitable diffusion barrier layer for LGS substrate.…”

Section: Resultsmentioning

confidence: 99%

Improvement of High-Temperature Stability of Al2O3/Pt/ZnO/Al2O3 Film Electrode for SAW Devices by Using Al2O3 Barrier Layer

et al. 2017

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In order to develop film electrodes for the surface acoustic wave (SAW) devices operating in harsh high-temperature environments, novel Al2O3/Pt/ZnO/Al2O3 multilayered film electrodes were prepared by laser molecular beam epitaxy (LMBE) at 150 °C. The first Al2O3 layer was used as a barrier layer to prevent the diffusion of Ga, La, and Si atoms from the La3Ga5SiO14 (LGS) substrate to the film electrode and thus improved the crystalline quality of ZnO and Pt films. It was found that the resistance of the Al2O3/Pt/ZnO/Al2O3 electrode did not vary up to a temperature of 1150 °C, suggesting a high reliability of electrode under harsh high-temperature environments. The mechanism of the stable resistance of the Al2O3/Pt/ZnO/Al2O3 film electrodes at high temperature was investigated by analyzing its microstructure. The proposed Al2O3/Pt/ZnO/Al2O3 film electrode has great potential for application in high-temperature SAW devices.

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Effects of Interface Al[sub 2]O[sub 3] Passivation Layer for High-k HfO[sub 2] on GaAs

Cited by 12 publications

References 16 publications

The impact of atomic layer deposited SiO₂passivation for high-k Ta_1−xZr_xO on the InP substrate

The impact of atomic layer deposited SiO₂passivation for high-k Ta_1−xZr_xO on the InP substrate

Thermal Stability of ALD-HfO₂/GaAs Pretreated with Trimethylaluminium

Improvement of High-Temperature Stability of Al2O3/Pt/ZnO/Al2O3 Film Electrode for SAW Devices by Using Al2O3 Barrier Layer

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Effects of Interface Al[sub 2]O[sub 3] Passivation Layer for High-k HfO[sub 2] on GaAs

Cited by 12 publications

References 16 publications

The impact of atomic layer deposited SiO2passivation for high-k Ta1−xZrxO on the InP substrate

The impact of atomic layer deposited SiO2passivation for high-k Ta1−xZrxO on the InP substrate

Thermal Stability of ALD-HfO2/GaAs Pretreated with Trimethylaluminium

Improvement of High-Temperature Stability of Al2O3/Pt/ZnO/Al2O3 Film Electrode for SAW Devices by Using Al2O3 Barrier Layer

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The impact of atomic layer deposited SiO₂passivation for high-k Ta_1−xZr_xO on the InP substrate

The impact of atomic layer deposited SiO₂passivation for high-k Ta_1−xZr_xO on the InP substrate

Thermal Stability of ALD-HfO₂/GaAs Pretreated with Trimethylaluminium