Effects of Insulator Surface Roughness on Al-Alloy Film Crystallographic Orientation in Al-Alloy/Ti/Insulator Structure

Abstract

A brief review of established methods shows that only with the Berthelot technique is it possible to see a finite volume of liquid in sustained mechanical tension. A short discussion of the practice and theory reveals two uncertainties with the conventional technique : that of the determination of a true filling temperature, and the influence of compliance by the glass on the tension developed. A description is then given of a modified apparatus with which these difficulties do not arise. The tube is formed into a coil which deflects sufficiently to indicate internal pressure or tension, and by monitoring these deflections with a distance meter a record of pressure/ tension against temperature can be made. The course of a typical run is shown from which the excess pressure, filling temperature and limiting tension may all be estimated with much greater precision than befoie. The orders of magnitude of the results obtained are indicated, and a possible influence of non-uniform gaseous supersaturation is suggested.

Orientational growth of Al(111) caused by interposing Al3Ti layer on a highly oriented TiN(200) film

“…Therefore, we consider that the optimum preparation conditions for a stoichiometric TiN film with good crystallinity and low resistivity are an N 2 flow ratio of 12%, a substrate temperature of 400 °C, and an Si substrate. match between Al(111) and Al 3 Ti(112) is small, as reported previously [8,9]. The obtained XRD results for the Al/Al 3 Ti/TiN/Si contact structure are shown in Fig.…”

Effect of Ar Sputter Etch on the Texture of Ti and Al/TiN/Ti Metal Stack

“…Onoda et al 6 and Rodbell et al 7 reported that the oxide surface roughness affected the Ti texture, where a smooth oxide caused tighter (002) Ti texture distribution. Ti tended to grow with (002) and (011) planes parallel to the local oxide surface.…”

“…In contrast to Onoda's 6 and Rodbell's 7 reports, the smoother oxide surface induced by Ar sputter degraded the (002) Ti texture on PETEOS. In Onoda's study, 6 Ti films were deposited at 100°C without Ar presputter etch, and in Rodbell's study 7 wafers were degassed at 150°C for 1 min and then Ti was deposited at 150°C. In this study, Ar sputter etch degraded the (002) Ti texture at a deposition temperature above 200°C.…”

Thermal stability of Cu/W/Si contact systems using layers of Cu(111) and W(110) preferred orientations

“…The configuration of the present layered structure of Cu͑111͒/W͑110͒ on Si is, therefore, one of the promising candidates for the future application to the epitaxial contact systems. Furthermore, the oriented growth of Cu͑111͒ may be also favorable to electromigration resistance similarly to the case of Al-Cu and Al-Si-Cu interconnect lines, [27][28][29] although factors controlling the evolution of texture in sputter-deposited thin metal films are not well understood. The Cu/W interface after annealing at 680°C for 1 h is smooth by TEM observation ͑Fig.…”