Effects of initial GaN growth mode on the material and electrical properties of AlGaN/GaN high-electron-mobility transistors

Wong, Yuen Yee; Chang, Edward Yi; Huang, Wei; Lin, Yueh Chin; Tu, Yung Yi; Chen, Kai Wei; Yu, Hung Wei

doi:10.7567/apex.7.095502

Cited by 7 publications

(3 citation statements)

References 22 publications

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“…Despite the lower TD achieved, the off-state leakage current was increased in their study. The mechanism of the existence of a transition from a three-dimensional to two-dimensional growth mode when growing GaN NL at different V/III ratios was first reported by Y. Wong et al [21]. It was concluded that the improvement in the electrical performance of AlGaN/GaN HEMTs could be achieved through optimized growth conductions.…”

Section: Introductionmentioning

confidence: 94%

Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate

et al. 2023

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A high-pressure (HP) GaN nucleation layer (NL) was inserted between AlGaN buffer and an unintentionally doped (UID) GaN layer of an AlGaN/GaN HEMT on Si. The XRD and TEM showed that when the V/III ratio was optimized during the HP-GaN NL growth, the edge dislocation density in the HP-GaN NL layer could be reduced significantly. Experimental results exhibited a lower off-state leakage current, higher maximum ID and Gm (corresponding to 22.5% and 21.7% improvement, respectively), and lower on-state resistance. These results demonstrate that the electrical properties of the AlGaN/GaN HEMT can be improved through the insertion of a HP-GaN NL.

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Section: Introductionmentioning

confidence: 94%

Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate

et al. 2023

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“…7) In the case of power devices, such unwanted impurities can potentially cause problems such as an off-state leakage current because the incorporated oxygen acts as a residual donor. 8) We have proposed that a low threading dislocation density can be obtained without the formation of various facets by improving the crystal quality of the seed layer on the Si substrate. An AlN layer on a Si(111) surface is typically used as the seed layer to prevent the formation of an alloy between Ga and Si.…”

Section: Introductionmentioning

confidence: 99%

Strain-induced step bunching in orientation-controlled GaN on Si

Narita

Iguchi

Horibuchi

et al. 2016

Jpn. J. Appl. Phys.

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We report a technique for the fabrication of high-quality GaN-on-silicon (Si) substrates for use in various power applications. GaN epitaxial layers were generated on Si(111) vicinal faces that had been previously covered with a thin coating of Al2O3 to control the orientation of the AlN seed layers. We obtained orientation-controlled GaN layers and found a linear relationship between the GaN c-axis and Si[111] tilt angles. As a result, the threading dislocation density in the AlN seed layer was reduced and high-quality GaN layers were generated. The X-ray rocking curves for these layers exhibited full width at half maximum values of 390′′ and 550′′ for the (004) and (114) reflections, respectively. Significant step bunching was observed on a GaN(0001) vicinal face produced using this technique, attributed to strain-induced attractive interactions between steps. Thus, by controlling the strain near the surface layer, we achieved the step flow growth of GaN on Si.

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“…13) In our pervious study, we demonstrated that the incorporation of O near the GaN= sapphire interface was affected by the initial GaN growth mode. 14) The amount of O near the GaN=AlN buffer interface was a function of the growth mode transition time (threedimensional growth to two-dimensional growth, 3D-2D) in the GaN layer. By adjusting the V=III ratio in GaN growth, the incorporation of O could be eliminated in the 2D growth mode during the initial growth stage.…”

Section: Introductionmentioning

confidence: 99%

Influence of AlN buffer layer thickness on material and electrical properties of InAlN/GaN high-electron-mobility transistors

Huang

Liu

Wong

et al. 2015

Jpn. J. Appl. Phys.

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The influence of the thickness of a high-temperature AlN (HT-AlN) buffer layer on the properties of an InAlN/GaN high-electron-mobility transistor (HEMT) grown on a sapphire substrate was investigated. As revealed by atomic force microscope analysis, a rougher surface and larger grain size were observed with a thicker buffer layer. The larger grains promoted the two-dimensional (2D) growth mode of the GaN layer at the initial growth stage. This suppressed oxygen incorporation at the GaN/HT-AlN interface and thus improved the resistivity of the GaN layer. Moreover, the lower grain density also resulted in enhanced GaN crystal quality of the GaN layer. As a consequence, the electrical properties of the InAlN/GaN HEMT device, such as output current, transconductance and off-state breakdown voltage, were improved by increasing the HT-AlN buffer layer thickness.

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Effects of initial GaN growth mode on the material and electrical properties of AlGaN/GaN high-electron-mobility transistors

Cited by 7 publications

References 22 publications

Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate

Effect of High-Pressure GaN Nucleation Layer on the Performance of AlGaN/GaN HEMTs on Si Substrate

Strain-induced step bunching in orientation-controlled GaN on Si

Influence of AlN buffer layer thickness on material and electrical properties of InAlN/GaN high-electron-mobility transistors

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