Abstract:The influence of the thickness of a high-temperature AlN (HT-AlN) buffer layer on the properties of an InAlN/GaN high-electron-mobility transistor (HEMT) grown on a sapphire substrate was investigated. As revealed by atomic force microscope analysis, a rougher surface and larger grain size were observed with a thicker buffer layer. The larger grains promoted the two-dimensional (2D) growth mode of the GaN layer at the initial growth stage. This suppressed oxygen incorporation at the GaN/HT-AlN interface and th… Show more
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.