Effects of impurity doping in lead zirconate-titanate ceramics

Takahashi, Sadayuki

doi:10.1080/00150198208210617

Cited by 283 publications

(149 citation statements)

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“…The hard ones are those to which acceptor impurities have been added, usually denoted as hardeners, such as Fe 3+ . These kinds of ions enter at Zr 4+ or Ti 4+ sites by creating oxygen vacancies and forming the so-called complex defects [6], [7]. at room temperature, this type of defect acts as a pinning center by lowering the mobility of the domain walls [7], resulting in a fall on the observed values of piezoelectric, elastic, and dielectric coefficients, accompanied by a drop in the material losses.…”

Section: Introductionmentioning

confidence: 99%

Influence of extrinsic contribution on the macroscopic properties of hard and soft lead zirconate titanate ceramics

Ochoa

García

Pérez

et al. 2008

IEEE Trans. Ultrason., Ferroelect., Freq. Contr.

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Abstract-In this work, the contribution of the extrinsic effect to the macroscopic properties in soft and hard lead zirconate titanate ceramics is directly evaluated. Close to the room temperature, poled hard ceramics show an anomalous behavior, which is notably different from that of soft ceramics, not only in dielectric but also in piezoelectric and elastic responses. Hence, at room temperature their properties are thermally stable and the losses are unusually low. It is suggested that two mechanisms are present, with one mechanism inhibiting the other.

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Section: Introductionmentioning

confidence: 99%

Influence of extrinsic contribution on the macroscopic properties of hard and soft lead zirconate titanate ceramics

Ochoa

García

Pérez

et al. 2008

IEEE Trans. Ultrason., Ferroelect., Freq. Contr.

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“…This offset effectively increases the coercive field ͑E C ͒ and reduces or clamps domain wall motion/mobility. 2,3 A consequence of these dopants, however, is a reduction in electromechanical coupling and piezoelectric activity, with k 33 values less than 70% and piezoelectric strain coefficients d 33 's on the order of 200-350 pC/ N, 4 so limits the bandwidth of transducer since the power and bandwidth capabilities of the transducer are functions of the mechanical quality and electromechanical coupling factors 5,6 . Recently, domain engineered ͗001͘ oriented single crystal perovskites have been demonstrated to possess ultrahigh electromechanical couplings k 33 Ͼ 90% and high piezoelectric coefficients d 33 Ͼ 1500 pC/ N. However, the relaxor-PbTiO 3 ͑PT͒ crystals exhibit low mechanical quality Q's ͑Ͻ100͒ and coercive fields ͑E C ϳ 2-3 kV/ cm͒, typical of "soft" piezoelectric behavior.…”

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confidence: 99%

“…To date, only moderate mechanical Q values in the range of 200-300 have been achieved in flux grown Pb͑Zn 1/3 Nb 2/3 ͒O 3 -PbTiO 3 crystals. [10][11][12] In this work, the effect of acceptor doping with MnO 2 in solid state crystal grown ͑SSCG͒ 0.4Pb͑Mg 1/3 Nb 2/3 ͒O 3 -0.25PbZrO 3 -0.35PbTiO 3 ͑PMN-PZT͒ crystals was investigated. The SSCG method was selected owing to its inherent benefit of maintaining dopant uniformity in a solid solution, unlike the melt Bridgman process.…”

mentioning

confidence: 99%

Characterization of Mn-modified Pb(Mg1∕3Nb2∕3)O3–PbZrO3–PbTiO3 single crystals for high power broad bandwidth transducers

Zhang

Lee

Kim

et al. 2008

Applied Physics Letters

116

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The effect of MnO 2 addition on the dielectric and piezoelectric properties of 0.4Pb͑Mg 1/3 Nb 2/3 ͒O 3 -0.25PbZrO 3 -0.35PbTiO 3 single crystals was investigated. Analogous to acceptor doping in "hard" Pb͑Zr, Ti͒O 3 based polycrystalline materials, the Mn doped crystals exhibited enhanced mechanical Q ͑ϳ1050͒ with low dielectric loss ͑ϳ0.2% ͒, while maintaining ultrahigh electromechanical coupling k 33 Ͼ 90%, inherent in domain engineered single crystals. The effect of acceptor doping was also evident in the build-up of an internal bias ͑E i ϳ 1.6 kV/ cm͒, shown by a horizontal offset in the polarization-field behavior. Together with the relatively high usage temperature ͑T R-T ϳ 140°C͒, the Mn doped crystals are promising candidates for high power and broad bandwidth transducers. © 2008 American Institute of Physics. ͓DOI: 10.1063/1.2992081͔High power ultrasonic transducers generally use "hard" piezoelectric ceramics Pb͑Zr, Ti͒O 3 ͑PZT͒, including PZT4 and PZT8 ͑DOD types I and III͒ 1 . These materials are characterized by low dielectric ͑tan ␦͒ and mechanical losses ͑high mechanical quality factor Q͒. In general, to achieve the "hardening" effect, these materials are acceptor doped, e.g., Fe 3+,2+ , Mn 3+,2+ substitution for Zr 4+ / Ti 4+ , resulting in the development of acceptor-oxygen vacancy defect dipoles. These dipoles align parallel to the polarization direction, leading to an internal bias, as evident in a horizontal offset in the polarization-electric field ͑P-E͒ behavior. This offset effectively increases the coercive field ͑E C ͒ and reduces or clamps domain wall motion/mobility. 2,3 A consequence of these dopants, however, is a reduction in electromechanical coupling and piezoelectric activity, with k 33 values less than 70% and piezoelectric strain coefficients d 33 's on the order of 200-350 pC/ N, 4 so limits the bandwidth of transducer since the power and bandwidth capabilities of the transducer are functions of the mechanical quality and electromechanical coupling factors 5,6 . Recently, domain engineered ͗001͘ oriented single crystal perovskites have been demonstrated to possess ultrahigh electromechanical couplings k 33 Ͼ 90% and high piezoelectric coefficients d 33 Ͼ 1500 pC/ N. However, the relaxor-PbTiO 3 ͑PT͒ crystals exhibit low mechanical quality Q's ͑Ͻ100͒ and coercive fields ͑E C ϳ 2-3 kV/ cm͒, typical of "soft" piezoelectric behavior. 7-9 Numerous efforts have been made to piezoelectrically harden the crystals through the addition of acceptor dopants. To date, only moderate mechanical Q values in the range of 200-300 have been achieved in flux grown Pb͑Zn 1/3 Nb 2/3 ͒O 3 -PbTiO 3 crystals. [10][11][12] In this work, the effect of acceptor doping with MnO 2 in solid state crystal grown ͑SSCG͒ 0.4Pb͑Mg 1/3 Nb 2/3 ͒O 3 -0.25PbZrO 3 -0.35PbTiO 3 ͑PMN-PZT͒ crystals was investigated. The SSCG method was selected owing to its inherent benefit of maintaining dopant uniformity in a solid solution, unlike the melt Bridgman process. The PMN-PZT composition was selected owing to its relatively...

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“…The experiment showed that the internal field width is almost proportional to the acceptor doping concentration in the system. 20 Therefore the dependence of the dielectric susceptibility on the internal field width will be helpful in understanding the aging and doping dependence of dielectric susceptibility.…”

Section: ͑3͒mentioning

confidence: 99%

Effect of defect-induced internal field on the aging of relaxors

Duan

Wang

et al. 2003

Phys. Rev. B

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The effect of a defect-induced internal field on the dielectric response of relaxor ferroelectrics is investigated using a Monte Carlo simulation. It was observed that only at a small temperature range near the temperature of the dielectric maximum does the susceptibility decrease markedly due to the internal field. This temperature range increases with enhancing internal field. We found that the susceptibility is almost independent of the internal field width at low internal field width, and then decreases linearly with enhancing internal field width. This dependence of the susceptibility on the internal field width is very similar to the relation of the dielectric constant with logarithmic aging time, which probably suggests a linear dependence of the internal field on the logarithm of the aging time. The frequency dependence of the susceptibility aging is sensitive to the temperature. With increasing temperature, the curve of the susceptibility change against logarithmic frequency varies from concave to approximately linear, and then to convex, which is in agreement with the recent aging rate measurement. Relaxor ferroelectrics ͑relaxors͒ have special dielectric characteristics compared with normal ferroelectrics. A typical relaxor ferroelectric displays a diffuse phase transition, a strong frequency dispersion of the dielectric properties, and an absence of macroscopic polarization at zero electric field. 1 Although the origin of these dielectric features is still controversial, it has been suggested that the presence of polar microregions in nanoscale is crucial to the relaxor behaviors. Various models, such as the dipolar glass model, the quenched random-field model, and the random-bandrandom-field model, have been proposed to account for the unusual physical properties of relaxor ferroelectrics. [2][3][4][5][6] The relatively high dielectric constant and lowtemperature coefficient has led to many successful applications of relaxors such as multilayered capacitors. Due to their influences on the actual applications and the comprehension of the dielectric mechanism, the dielectric aging behaviors of relaxor ferroelectrics have been extensively investigated in the last decade. 7-14 The experimental results have indicated the importance of the defect structure in the aging in this type of material. For example, very little dielectric aging was observed for a carefully prepared pure PMN. However, PMN with Mn and other acceptor dopants shows significant aging. 10 The main characteristic of acceptor dopants is the introduction of O 2Ϫ vacancies, which results in the formation of the oxygen-vacancy-metal-impurity defect dipoles. 7,8 The reorientation and alignment of the defect dipoles with the local nanoscale polar domains lead to the internal field, which provides a pinning to the polar microregion and results in a decrease of the switchable polarization. 15,16 It is widely accepted nowadays that the defect-induced internal field is responsible for the aging behavior in relaxor ferroelectrics, but how the inter...

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Effects of impurity doping in lead zirconate-titanate ceramics

Cited by 283 publications

References 16 publications

Influence of extrinsic contribution on the macroscopic properties of hard and soft lead zirconate titanate ceramics

Influence of extrinsic contribution on the macroscopic properties of hard and soft lead zirconate titanate ceramics

Characterization of Mn-modified Pb(Mg1∕3Nb2∕3)O3–PbZrO3–PbTiO3 single crystals for high power broad bandwidth transducers

Effect of defect-induced internal field on the aging of relaxors

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