Effects of hydrostatic pressure and temperature on electronic band parameters in AlxGa1?xAs

Abstract

Influence of hydrostatic pressure and temperature on electronic band parameters for zinc-blende AlxGa1−xAs was investigated by means of pseudopotential calculations. The agreement between our results and the available experimental data is generally satisfactory. Our results showed that the effect of pressure leads to a decrease of the crossing point and the optical bowing parameter. However, the temperature effect was found to be insignificant on both crossing point and bowing parameter.PACS : 71.20.Nr

Temperature and hydrostatic pressure dependence of the electronic structure of AlxGa1−xAs alloys

“…The E L g bowing parameter is 0.123 eV. This value is in good agreement with the published data [54] and the calculated values given by Boucenna et al [14]. Fig.…”

“…This value is in excellent agreement with the experimental value given by Adachi [51] and the calculated value given by Boucenna et al [14]. The E X g bowing parameter is À 0.0612 eV which is in good agreement with the values obtained from photoluminescence measurements [1,52,53] and the calculated values given by Boucenna et al [14].…”

“…Al x Ga 1 À x As alloys are of considerable scientific interest because of their potential for device applications [6]. Al x Ga 1À x As is the most important and the most studied III-V semiconductor alloy [7][8][9][10][11][12][13][14]. Its key role in a variety of transistor and optoelectronic devices has called for a precise knowledge of the fundamental energy gap as well as the alignment of the three main conduction-band valleys [1].…”

“…The essential properties of semiconductors are their transport mechanisms that are tightly bound to their energy band gaps. Hence, the knowledge of the latter and their behavior under pressure and at various temperatures would unable us to predict overall properties of the materials of interest [14].…”

“…Boucenna et al [14] were investigated the influence of pressure (0-20 kbar) and temperature (0-300 K) on the electronic band parameters for zinc-blende Al x Ga 1À x As. Reimann et al [37] have addressed the pressure dependence (0oPo6 GPa) of the indirect band gap of Al x Ga 1À x As alloys (x¼0.70 and 0.92) at low temperatures (To10 K).…”