Effect of the Hydrostatic Pressure on the Electronic States Induced by a Geo-Material Defect Layer in a Multi-quantum Wells Structure

Elamri, Fatima Zahra; Falyouni, Farid; Bria, Driss

doi:10.1007/978-981-15-6259-4_20

Cited by 3 publications

(3 citation statements)

References 14 publications

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“…This displacement is due to the remarkable effect of these external perturbations (temperature and hydrostatic pressure) on the electronic mobility in our structure. This state behavior has previously been observed in MQWs based on III-V semiconductors [7,21]. This gives us the possibility to use these structures in sensing applications like pressure or temperature sensors.…”

Section: Resultssupporting

confidence: 74%

Theoretical Study of Hydrostatic Pressure and Temperature Effect on a Multi-Quantum well ZnO/Zn1-XMgxO Containing a Staircase Defect for Sensing Application

Baidri,

Elamri,

Ben-Ali

et al. 2023

DDF

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This work describes a theoretical and analytical study of a temperature and pressure sensor based on II-VI semiconductors with a simple multi-quantum wells (MQWs) structure. The proposed sensor operates by detecting changes in the intensity (transmission coefficient) and energy of localized electronic states inside gaps under external perturbations of hydrostatic pressure and temperature. Specifically, the proposed MQWs structure is ZnO/Zn1-XMgXO with 10 cells, each containing two materials that form the wells and barriers, respectively. The structure is perturbed by a staircase defect consisting of three defects of the same material or geomaterial. The Green function method is used to study the transmittance of the structure, with cleavage and coupling operators employed. The objective of the work is to explore a new type of defect for use in sensing applications such as multi-quantum well sensors. Key parameters for evaluating the sensor's performance include full width at half maximum (FWHM), sensor sensitivity (S), quality factor (QF), detection limit (DL), signal-to-noise ratio (SNR), dynamic range (DR), detection accuracy (DA), the figure of merit (MF), and standard deviation. These parameters can be optimized by adjusting structural parameters such as the thickness of the staircase or material concentration. The study found that a geomaterial staircase defect provides higher sensitivity to pressure and temperature changes. Additionally, the step (δx) of the staircase defect influences the sensitivity of the localized states: with increasing steps, δx improves sensitivity to temperature and decreases sensitivity to pressure.

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Section: Resultssupporting

confidence: 74%

Theoretical Study of Hydrostatic Pressure and Temperature Effect on a Multi-Quantum well ZnO/Zn1-XMgxO Containing a Staircase Defect for Sensing Application

Baidri,

Elamri,

Ben-Ali

et al. 2023

DDF

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“…", based on that quote, many researchers have been intrested on introducing defects inside perfect MQWs structures, in order to break the systems' periodicity. We can usually introduce three types of defects, from those inserted in MQWs, we have geometric, geo-material and material defects [12,13,14,15]. Additionally, in our previous works [16,17,18], we have investigated the effects of placing defects of the same type-geometric or material-in differente positions.…”

Section: Introductionmentioning

confidence: 99%

Electronic Localized States Behaviour in a GaAs/GaAlAs Multi-Quantum Wells with a Geo-Material and a Material Defects

Elamri,

Falyouni,

Bria

2023

SSP

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This paper represents a theoretical study of the transmission and the electronic band structure for a GaAs/GaAlAs Multi-quantum wells, containing two defect layers: a geo-material and a material defect layer. The variation of the different physical parameters ( i.e the transmission rate and the energy of the eigen states) as a function of the defect layers nature, is carefully investigated using the Green’s function method. Due to the presence of the defect layers, localized electronic states appeared and their properties have been studied. Our results show that both the position and the thickness of the defect layers can play an important role in the creation of well-defined localized electronic states inside the band gaps, in order to favor the transfer of electrons, without using a higher energy. Furthermore, we were able to identify the origin of each of the states appearing inside the band gaps, whether they are induced by the geo-material or by the material defect.

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“…On the other hand, other researchers are interested in the insertion of defects in MQWs that aim to break the periodicity of the systems. Among the defects inserted in MQWs, we distinguish three types of defects; geometric, geo-material, material defects [14][15]. Also, F.Z.…”

Section: Introductionmentioning

confidence: 99%

Effect of the Introduction of a Staircase Defect on the Behavior of the Induced Electronic State in a MQWs Structure

Baidri¹,

Elamri²,

Falyouni³

et al. 2022

DDF

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This work investigates the behavior of the electronic states in ZnO/ Zn1-xMgxO MQWs induced by a staircase-like defect layer bounded by two substrates of the same type (ZnO). We use the interface response theory to calculate the different physical properties of the system. First, westudied a material staircase defect containing three material defects, such where the concentration depends on an increasing step noted P and a parameter X0 which does not exceed 0.35, so that the materials remain crystallized in the same structure. We found that the increase of these parameters induces an augmentation in the potential energy, leading to shifts of the electronic states to higher energies. In the second part, we studied the effect of introducing a geo-material defect with the step P=0.05 and X0=0 as optimal values, and the thickness of the staircase defect layer depends on an increment step noted S. We found that the variation of S influences the number of states that appear in the gap, which gives the possibility to improve the electron transport without using higher energy.Finally, we try to find several staircase defect configurations used in different structures. We found that inside the case of symmetric defect permutation, the position of the defect does not influence the behavior of the electronic states. Still, in the case of antisymmetric permutation, the position of thedefect has an influence on the behavior of the electronic states.

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Effect of the Hydrostatic Pressure on the Electronic States Induced by a Geo-Material Defect Layer in a Multi-quantum Wells Structure

Cited by 3 publications

References 14 publications

Theoretical Study of Hydrostatic Pressure and Temperature Effect on a Multi-Quantum well ZnO/Zn<sub>1-X</sub>Mg<sub>x</sub>O Containing a Staircase Defect for Sensing Application

Theoretical Study of Hydrostatic Pressure and Temperature Effect on a Multi-Quantum well ZnO/Zn<sub>1-X</sub>Mg<sub>x</sub>O Containing a Staircase Defect for Sensing Application

Electronic Localized States Behaviour in a GaAs/GaAlAs Multi-Quantum Wells with a Geo-Material and a Material Defects

Effect of the Introduction of a Staircase Defect on the Behavior of the Induced Electronic State in a MQWs Structure

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