Effects of hydrogen plasma on passivation and generation of defects in multicrystalline silicon

Darwiche, S.; Nikravech, Mehrdad; Morvan, Daniel; Amouroux, J.; Ballutaud, D.

doi:10.1016/j.solmat.2006.08.008

Cited by 16 publications

(10 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…2. The possibility of the H + ions in the bulk silicon has been predicted in the previous reports [1]. The dependences of Isc and the efficiency on the bias voltage as shown in Fig.…”

Section: Influence Of the Bias Voltage During Hydrogenation Processsupporting

confidence: 64%

Effects of a Bias Voltage During Hydrogenation on Passivation of the Defects in Polycrystalline Silicon for Solar Cells

2009

View full text Add to dashboard Cite

The short circuit current and conversion efficiency of the poly(multi)-crystalline solar cells are increased by the passivation process using hydrogen plasma. The passivation rate apparently increases at a reverse bias voltage near 0.6V during the hydrogenation process. The effects of the bias voltage on the passivation are large at the substrate temperatures between 200°C and 250°C. The phenomena are likely due to the existence of positively-ionized hydrogen, H + . The H + ions can be accelerated from the surface into the bulk by the electric field with the negative bias. The possibility of the H + ions in the bulk silicon has been predicted in the previous reports. The increase of the incorporated hydrogen is confirmed by IR absorption measurements. The enhanced diffusion of hydrogen induced by the reverse bias is supported by the results of spectral response characteristics of the hydrogenated solar cells.

show abstract

“…2. The possibility of the H + ions in the bulk silicon has been predicted in the previous reports [1]. The dependences of Isc and the efficiency on the bias voltage as shown in Fig.…”

Section: Influence Of the Bias Voltage During Hydrogenation Processsupporting

confidence: 64%

Effects of a Bias Voltage During Hydrogenation on Passivation of the Defects in Polycrystalline Silicon for Solar Cells

2009

View full text Add to dashboard Cite

show abstract

“…As major defects in LP-SPC poly-Si are intra-grain defects, higher energy radicals H β and H γ are needed to penetrate into the grains, and even to break Si-Si weak bonds firstly, and then to perform the passivation and form Si-Si strong bonds as shown in the following equation: [10,17] 2H…”

Section: Resultsmentioning

confidence: 99%

“…But LP-MIC contains many defects related to Ni impurity whose bond energy might be greater than that of a dangling bond and lower than that of a Si-Si weak bond, so H * radicals with middle energy are suitable to passivating this kind of defect. [10,16,17] Some conclusions can be drawn as follows: there are four kinds of hydrogen plasma radicals in the hydrogen passivation process for poly-Si materials. It has been found that the hydrogen plasma passivation mechanism is related to the poly-…”

Section: Resultsmentioning

confidence: 99%

The mechanism of hydrogen plasma passivation for poly-crystalline silicon thin film

Luo

Meng

et al. 2013

Chinese Phys. B

View full text Add to dashboard Cite

show abstract

“…This simplification amounts to underestimate the trapping rate . At the beginning of the H plasma exposure, the initial conditions for the set of equations (2) and 3 Moreover, values as high as 10 20 -10 21 cm 3 were experimentally measured for the H surface concentration [36,[44][45][46][47].…”

Section: Hydrogen Capture and Release Modelmentioning

confidence: 99%

Hydrogen evolution during deposition of microcrystalline silicon by chemical transport

Pham

Cabarrocas

Hadjadj

et al. 2008

Philosophical Magazine

View full text Add to dashboard Cite

International audienceWe have exposed a freshly deposited boron-doped hydrogenated amorphous silicon (a-Si:H) layer to a hydrogen plasma under conditions of chemical transport. In situ spectroscopic ellipsometry measurements revealed that atomic hydrogen impinging on the film surface behaves differently before and after crystallization. First, the plasma exposure increases the hydrogen solubility in the a-Si:H network leading to the formation of a hydrogen-rich subsurface layer. Then, once the crystallization process engages, the exceeding hydrogen starts to leave the sample. We have attributed this unusual evolution of the exceeding hydrogen to the role of the grown hydrogenated microcrystalline (Μc-Si:H) layer that gradually prevents the atomic hydrogen coming from the plasma to reach the Μc-Si:H/a-Si:H interface. Consequently, the hydrogen solubility, initially increased by the hydrogen plasma, recovers its initial value of an untreated a-Si:H material. To support the idea that the out-diffusion is a consequence and not the cause of the growth of the Μc-Si:H layer, we have solved the combined diffusion and trapping equations that govern the hydrogen diffused into the sample, using appropriate approximations and a specific boundary condition traducing the lack of hydrogen injection during the Μc-Si:H layer growth

show abstract

Effects of hydrogen plasma on passivation and generation of defects in multicrystalline silicon

Cited by 16 publications

References 15 publications

Effects of a Bias Voltage During Hydrogenation on Passivation of the Defects in Polycrystalline Silicon for Solar Cells

Effects of a Bias Voltage During Hydrogenation on Passivation of the Defects in Polycrystalline Silicon for Solar Cells

The mechanism of hydrogen plasma passivation for poly-crystalline silicon thin film

Hydrogen evolution during deposition of microcrystalline silicon by chemical transport

Contact Info

Product

Resources

About