2009
DOI: 10.4028/www.scientific.net/msf.609.81
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Effects of Hydrogen Partial Pressure on Boron-Doped Hydrogenated Amorphous Silicon (a-Si:H(B)) Properties

Abstract: Boron-doped hydrogenated amorphous silicon (a-Si:H(B)) thin films have been prepared by DC magnetron sputtering technique under argon and hydrogen mixture. The films were deposited at various hydrogen pressures between 0 and 9 10-5 mbar. The boron concentration estimated from Secondary Ion Mass Spectrometry (SIMS) analysis was found to be around 1.5 1021 cm-3 for all samples. Their physico-chemical, optical and electrical properties are investigated. The physico-chemical properties were studied by infrared abs… Show more

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Cited by 3 publications
(2 citation statements)
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“…[18][19][20]. This explanation is confirmed by a previous experimental study performed in our laboratory on aSi:H(B) films prepared at different hydrogen pressure [21]. …”
Section: Dark Conductivity (σ D ) Photoconductivity (σ Ph ) and Annesupporting
confidence: 78%
“…[18][19][20]. This explanation is confirmed by a previous experimental study performed in our laboratory on aSi:H(B) films prepared at different hydrogen pressure [21]. …”
Section: Dark Conductivity (σ D ) Photoconductivity (σ Ph ) and Annesupporting
confidence: 78%
“…These peaks are attributed to Si-B stretching mode, B-O-Si, Si-O-Si, S-OH vibration mode, and -OH bonding, respectively. [166,221,222] The peak at 800 and 940 cm -1 is enhanced in HDMS and indicates boron incorporation in Si lattice. Also, the reduction in Si-O-Si indicates a decrease in oxidation.…”
Section: Gene Expression Analysis By Rt-pcrmentioning
confidence: 99%