Effects of Hydrogen Implantation and Annealing on the Vibrational Properties of 6H-SiC

Kunert, H.W.; Maurice, T.; Hauser, T.; Malherbe, J.B.; Prinsloo, Linda C.; Brink, D. J.; Falkovsky, L. A.; Camassel, Jean

doi:10.4028/www.scientific.net/msf.353-356.275

Cited by 4 publications

(5 citation statements)

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“…Their bright-field image of hundred keV Ge implanted into 6H-SiC and annealed for 20 min at 1000°C showed a spot pattern corresponding to defective 3C-SiC polytype with twins and stacking faults. There was a definite orientation relationship with the hexagonal matrix: [111] 3C-SiC is parallel to [0001] 6H-SiC, and [110] 3C-SiC is parallel to [ 0 2 11 ] of the 6H-SiC matrix [199]. They also observed voids in the recrystallized polycrystalline SiC layer.…”

Section: Annealing Of Radiation Damagementioning

confidence: 88%

Diffusion of fission products and radiation damage in SiC

Malherbe

2013

J. Phys. D: Appl. Phys.

107

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A major problem with most of the present nuclear reactors is their safety in terms of the release of radioactivity into the environment during accidents. In some of the future nuclear reactor designs, i.e. Generation IV reactors, the fuel is in the form of coated spherical particles, i.e. TRISO (acronym for Triple Coated Isotropic) particles. The main function of these coating layers is to act as diffusion barriers for radioactive fission products, thereby keeping these fission products within the fuel particles, even under accident conditions. The most important coating layer is composed of polycrystalline 3C-SiC. This paper reviews the diffusion of the important fission products (silver, caesium, iodine and strontium) in SiC. Because radiation damage can induce and enhance diffusion, the paper also briefly reviews damage created by energetic neutrons and ions at elevated temperatures, i.e. the temperatures at which the modern reactors will operate, and the annealing of the damage. The interaction between SiC and some fission products (such as Pd and I) is also briefly discussed. As shown, one of the key advantages of SiC is its radiation hardness at elevated temperatures, i.e. SiC is not amorphized by neutron or bombardment at substrate temperatures above 350°C. Based on the diffusion coefficients of the fission products considered, the review shows that at the normal operating temperatures of these new reactors (i.e. less than 950°C) the SiC coating layer is a good diffusion barrier for these fission products. However, at higher temperatures the design of the coated particles needs to be adapted, possibly by adding a thin layer of ZrC.

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Section: Annealing Of Radiation Damagementioning

confidence: 88%

Diffusion of fission products and radiation damage in SiC

Malherbe

2013

J. Phys. D: Appl. Phys.

107

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“…Again, the other two Raman active modes can be measured by polarization effect [8]. Similar analysis can be applied to the Raman spectra from the 6H-SiC [6] and to all semiconductors with the C 4 6v space group. We also observe two phonon processes in GaN and ZnO.…”

Section: Resultsmentioning

confidence: 98%

“…Raman spectra from hexagonal GaN, ZnO and 6H-SiC with the C 4 6v space group were collected at room temperature in standard back-scattering configuration using as exciting frequency an Ar + -ion laser operated at 514.5nm [4][5][6].…”

Section: Resultsmentioning

confidence: 99%

“…However, it is isomorphic to the point group C 6v . The Irrps contained in the 12 x 12 displacement representation fully determine the allowed symmetries of modes in GaN at k = 0 as well as in all compounds with the C C group listed in Table 1 onto the twelve dimensional base { d 1 ,…, d 6 , α 1 ,…, α 6 } displayed on Fig. 1 where only one angle, a 5 is shown for clarity reasons.…”

Section: Determination Of the Possible Vibrational Modes In Gan With mentioning

confidence: 99%

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Raman selection rules in C⁴_6v hexagonal crystals: allowed combinations and overtones of vibrational modes in wurtzite GaN

Kunert

2003

Cryst. Res. Technol.

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A discrete set of oscillators belongs to the critical points in the lattice vibration spectrum. The vibrational states of crystals are classified according to appropriate irreducible representations of the relevant wave vector space groups. Suitable space-group selection rules are used to determine the active one and two phonon combinations and overtone processes in hexagonal structures. Experimental Raman spectra of the hexagonal C 4 6v GaN are discussed in terms of the derived selection rules.

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“…The shift could be associated with the shallow donar -deep acceptor transition. Kunert et al [13] reported that the yellow band shifts towards the lower wavelength side upon a particle irradiation on GaN. Also the blue emission intensity is high at LT.…”

Section: Photoluminescencementioning

confidence: 96%

Investigations on 40MeV Li3+ ions irradiated GaN epilayers

Kumar

Kanjilal

et al. 2008

Nuclear Instruments and Methods in Physics Research Section B:

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Effects of Hydrogen Implantation and Annealing on the Vibrational Properties of 6H-SiC

Cited by 4 publications

References 0 publications

Diffusion of fission products and radiation damage in SiC

Diffusion of fission products and radiation damage in SiC

Raman selection rules in C⁴_6v hexagonal crystals: allowed combinations and overtones of vibrational modes in wurtzite GaN

Investigations on 40MeV Li3+ ions irradiated GaN epilayers

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Effects of Hydrogen Implantation and Annealing on the Vibrational Properties of 6H-SiC

Cited by 4 publications

References 0 publications

Diffusion of fission products and radiation damage in SiC

Diffusion of fission products and radiation damage in SiC

Raman selection rules in C46v hexagonal crystals: allowed combinations and overtones of vibrational modes in wurtzite GaN

Investigations on 40MeV Li3+ ions irradiated GaN epilayers

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Raman selection rules in C⁴_6v hexagonal crystals: allowed combinations and overtones of vibrational modes in wurtzite GaN