Effects of high temperature rapid thermal processing on oxygen precipitation in heavily arsenic-doped Czochralski silicon

Wang, Biao; Zhang, Xinpeng; Ma, Xiangyang; Yang, Deren

doi:10.1016/j.jcrysgro.2010.11.016

Cited by 8 publications

(5 citation statements)

References 14 publications

(14 reference statements)

Supporting

Mentioning

Contrasting

Order By: Relevance

“…A low resistivity of heavily As-doped Si wafer has been reported as 2.7 mΩ-cm, corresponding to an As concentration of 1×10 19 cm -3 in the wafer [1]. A heavily…”

Section: Introductionmentioning

confidence: 99%

Constitutional supercooling in heavily As-doped Czochralski Si crystal growth

Taishi¹,

Ohno²,

Yonenaga³

2014

Journal of Crystal Growth

View full text Add to dashboard Cite

“…A low resistivity of heavily As-doped Si wafer has been reported as 2.7 mΩ-cm, corresponding to an As concentration of 1×10 19 cm -3 in the wafer [1]. A heavily…”

Section: Introductionmentioning

confidence: 99%

Constitutional supercooling in heavily As-doped Czochralski Si crystal growth

Taishi¹,

Ohno²,

Yonenaga³

2014

Journal of Crystal Growth

View full text Add to dashboard Cite

“…Note that the in situ doping of arsenic impurities is often adopted to grow the heavily arsenic‐doped Czochralski (HAs‐CZ) silicon crystal. [ 16,17 ] The HAs‐CZ silicon wafers generally act as the substrates of epitaxial wafers used for manufacturing power devices. [ 18,19 ] In order to reduce the on‐resistance of devices, the substrate resistivity is required to be reduced as low as possible.…”

Section: Introductionmentioning

confidence: 99%

Arsenic Precipitation in Heavily Arsenic‐Doped Czochralski Silicon

Wu¹,

Zhao²,

et al. 2022

Physica Rapid Research Ltrs

Self Cite

View full text Add to dashboard Cite

Heavily arsenic‐doped Czochralski (HAs‐CZ) silicon is an important substrate material for manufacturing power electronic devices. The arsenic impurities may be in a supersaturated status in a certain temperature range during the HAs‐CZ silicon crystal growth or the device fabrication. Then, whether and how the arsenic impurities can precipitate in HAs‐CZ silicon is an intriguing and practically significant issue that has never been addressed. Herein, it is first found that arsenic precipitation can occur in HAs‐CZ silicon when subjected to appropriately prolonged anneals at 550–950 °C. The resulting second‐phase precipitates are confirmed to be of orthorhombic SiAs phase, with the lattice parameters of a = 7.12 Å, b = 9.11 Å, and c = 9.00 Å, through systematic transmission electron microscopy characterizations. Moreover, it is discovered that the presence of vacancies/interstitial silicon atoms in HAs‐CZ silicon promotes/inhibits arsenic precipitation.

show abstract

“…Therefore, it is necessary to generate oxygen precipitates in n + silicon substrate to enable the IG of Fe. However, it is reported that oxygen precipitation (OP) is suppressed in the heavily arsenic (As)-doped Czochralski (CZ) silicon wafers [16,17], which are widely used as the substrates for n/n + epitaxial silicon wafers. Therefore, how to enhance OP in heavily As-doped silicon substrates is of technological significance.…”

Section: Introductionmentioning

confidence: 99%

Enhanced Internal Gettering of Iron in n/n<sup>+</sup> Epitaxial Silicon Wafer: Effect of High Temperature Rapid Thermal Annealing in Nitrogen Ambient

Dong

Liang

Tian

et al. 2015

SSP

View full text Add to dashboard Cite

We report a strategy feasible for improving the internal gettering (IG) capability of iron (Fe) for n/n+ epitaxial silicon wafers using the heavily arsenic (As)-doped Czochralski (CZ) silicon wafers as the substrates. The n/n+ epitaxial silicon wafers were subjected to the two-step anneal of 650 °C/16 h + 1000 °C/16 h following the rapid thermal processing (RTP) at 1250 °C in argon (Ar) or nitrogen (N2) atmosphere. It is found that the prior RTP in N2 atmosphere exhibits much stronger enhancement effect on oxygen precipitation (OP) in the substrates than that in Ar atmosphere, thereby leading to a better IG capability of Fe contamination on the epitaxial wafer. In comparison with the RTP in Ar atmosphere, the one in N2 atmosphere injects not only vacancies but also nitrogen atoms of high concentration into the heavily As-doped silicon substrate. The co-action of vacancy and nitrogen leads to the enhanced OP in the substrate and therefore the better IG capability for the n/n+ epitaxial silicon wafer.

show abstract

Effects of high temperature rapid thermal processing on oxygen precipitation in heavily arsenic-doped Czochralski silicon

Cited by 8 publications

References 14 publications

Constitutional supercooling in heavily As-doped Czochralski Si crystal growth

Constitutional supercooling in heavily As-doped Czochralski Si crystal growth

Arsenic Precipitation in Heavily Arsenic‐Doped Czochralski Silicon

Enhanced Internal Gettering of Iron in n/n<sup>+</sup> Epitaxial Silicon Wafer: Effect of High Temperature Rapid Thermal Annealing in Nitrogen Ambient

Contact Info

Product

Resources

About