Effects of H, OH, and CH3 radicals on diamond film formation in parallel-plate radio frequency plasma reactor

Ikeda, Masanobu; Ito, Hajime; Hiramatsu, Mineo; Hori, Masaru; Goto, Toshio

doi:10.1063/1.365715

Cited by 38 publications

(21 citation statements)

References 19 publications

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“…investigating the influence of rare gases on the plasma. They have also combined IR absorption with emission spectroscopy and investigated the effect of water vapour on the methyl radical concentration in argon/methane and argon/methanol RF plasmas using TDLAS [17,18,[41][42][43]. Kim…”

Section: General Considerationsmentioning

confidence: 99%

Application of mid-infrared tuneable diode laser absorption spectroscopy to plasma diagnostics: a review

Röpcke

Lombardi

Rousseau

et al. 2006

Plasma Sources Sci. Technol.

101

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Within the last decade mid-infrared absorption spectroscopy over a region from 3 to 17µm and based on tuneable lead salt diode lasers, often called tuneable diode laser absorption spectroscopy or TDLAS, has progressed considerably as a powerful diagnostic technique for in situ studies of the fundamental physics and chemistry in molecular plasmas. The increasing interest in processing plasmas containing hydrocarbons, fluorocarbons, organo-silicon and boron compounds has led to further applications of TDLAS because most of these compounds and their decomposition products are infrared active. TDLAS provides a means of determining the absolute concentrations of the ground states of stable and transient molecular species, which is of particular importance for the investigation of reaction kinetic phenomena. Information about gas temperature and population densities can also be derived from TDLAS measurements. A variety of free radicals and molecular ions have been detected by TDLAS. Since plasmas with molecular feed gases are used in many applications such as thin film deposition, semiconductor processing, surface activation and cleaning, and materials and waste treatment, this has stimulated the adaptation of infrared spectroscopic techniques to industrial requirements. The recent development of quantum cascade lasers (QCLs) offers an attractive new option for the monitoring and control of industrial plasma processes. The aim of the present paper is threefold: (i) to review recent achievements in our understanding of molecular phenomena in plasmas, (ii) to report on selected studies of the spectroscopic properties and kinetic behaviour of radicals and (iii) to describe the current status of advanced instrumentation for TDLAS in the mid-infrared.

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Section: General Considerationsmentioning

confidence: 99%

Application of mid-infrared tuneable diode laser absorption spectroscopy to plasma diagnostics: a review

Röpcke

Lombardi

Rousseau

et al. 2006

Plasma Sources Sci. Technol.

101

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“…The reactions of radical and atomic species with surfaces are important in situations including plasma etching, 1 plasma-enhanced chemical vapor deposition, 2 and thin film deposition. 3,4 Despite the importance of radicals in these technologically significant processes, the underlying molecular level events associated with radical-surface interactions are poorly understood. 5 As a result, plasma processes, including semiconductor etching and polymer modification strategies, have been developed from empirical observations.…”

Section: Introductionmentioning

confidence: 99%

Atomic oxygen reactions with semifluorinated and n-alkanethiolate self-assembled monolayers

Wagner

Wolfe

Fairbrother

2004

The Journal of Chemical Physics

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The interaction of atomic oxygen (O(3P)) with semifluorinated self-assembled monolayers (CF-SAMs), two different n-alkanethiolate self-assembled monolayers, and a carbonaceous overlayer derived from an x-ray modified n-alkanethiolate SAM have been studied using in situ x-ray photoelectron spectroscopy. For short atomic oxygen exposures, CF-SAMs remain intact, an effect ascribed to the inertness of C-F and C-C bonds toward atomic oxygen and the well-ordered structure of the CF-SAMs. Following this initial induction period, atomic oxygen permeates through the CF3(CF2)7 overlayer and initiates reactions at the film/substrate interface, evidenced by the formation of sulfonate (RSO3) species and Au2O3. These reactions lead to the desorption of intact adsorbate chains, evidenced by the loss of carbon and fluorine from the film while the C(1s) spectral envelope and the C(1s)/F(1s) ratio remain virtually constant. In contrast, the reactivity of atomic oxygen with alkanethiolate SAMs is initiated at the vacuum/film interface, producing oxygen-containing carbon functional groups. Subsequent reactions of these new species with atomic oxygen lead to erosion of the hydrocarbon film. Experiments on the different hydrocarbon-based films reveal that the atomic oxygen-induced kinetics are influenced by the thickness as well as the structural and chemical characteristics of the hydrocarbon overlayer. Results from this investigation are also discussed in the context of material erosion by AO in low Earth orbit.

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“…Note that magnetically enhanced MW plasma operating at a collisional pressure range (10 −1 torr) is categorized into the ECR plasma group. Low-density, capacitively coupled radio frequency (RF) plasmas (CCP) with parallel-plate electrodes can produce diamond only when they are magnetically enhanced [34] or combined with another plasma to increase radical densities [35], [36]. The results confirm that high radical fluxes are essential for the deposition under low-energy ion bombardment.…”

Section: Diamond Deposition With Low-energy Ion Bombardmentmentioning

confidence: 88%

Plasma Deposition of Diamond at Low Pressures: A Review

Teii

2014

IEEE Trans. Plasma Sci.

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Plasma deposition techniques of nanocrystalline and microcrystalline diamond and related mechanisms at pressures below 0.1 torr are reviewed. The mechanism of nucleation and growth of diamond in low-pressure conditions is discussed theoretically and experimentally along with the role of radicals and ions in two different ion-energy ranges. For ion impact energies below 20-30 eV, diamond deposition occurs on a surface. The growth process is limited by the substrate temperature and the flux of hydrogen radicals when the ion energy is reduced enough to several eV as shown by a kinetic rate analysis for radical species. The nucleation process is limited mainly by the degree of carbon saturation and, hence, the flux of carboncontaining species. For ion impact energies above 20-30 eV, diamond deposition occurs beneath a surface. Renucleation hinders the growth and diamond nanocrystals are embedded in an amorphous carbon matrix. The nucleation process depends strongly upon the ion energy, ion-to-depositing flux ratio, and substrate temperature as shown by the film density increment based on the subplantation model.Index Terms-Amorphous carbon, chemical vapor deposition (CVD), diamond-like carbon (DLC), epitaxy, hydrogen, ion bombardment, nanocrystalline diamond, nanodiamond, physical vapor deposition (PVD), plasma diagnostics, subplantation. 0093-3813

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Effects of H, OH, and CH3 radicals on diamond film formation in parallel-plate radio frequency plasma reactor

Cited by 38 publications

References 19 publications

Application of mid-infrared tuneable diode laser absorption spectroscopy to plasma diagnostics: a review

Application of mid-infrared tuneable diode laser absorption spectroscopy to plasma diagnostics: a review

Atomic oxygen reactions with semifluorinated and n-alkanethiolate self-assembled monolayers

Plasma Deposition of Diamond at Low Pressures: A Review

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