Effects of Growth Temperature and Postgrowth Annealing on Inhomogeneous Luminescence Characteristics of Green-Emitting InGaN Films

Masui, Hisashi; Melo, Thiago; Sonoda, Junichi; Weisbuch, C.; Nakamura, Shuji; DenBaars, Steven P.

doi:10.1007/s11664-009-0969-y

Cited by 4 publications

(2 citation statements)

References 11 publications

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“…5,6 Photoluminescence microscopy of such light emitting QWs show therefore fluctuations of intensity, energy, and full width at half maximum (FWHM) across the sample on different length scales. 5,7 A lot of research has been dedicated to understand why QWs with such a low quality compared to, e.g., GaAs/AlGaAs QWs nevertheless emit light, even stimulated emission. Localization of charge carriers provides one explanation.…”

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confidence: 99%

Time-of-flight measurements of charge carrier diffusion in InxGa1−xN/GaN quantum wells

et al. 2011

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Time-of-flight experiments were performed to investigate charge carrier diffusion in InGaN quantum wells. A mere optical setup with high spatial resolution was established on the basis of confocal microphotoluminescence microscopy in order to measure charge carrier movement directly. We investigate a multiquantum well sample emitting light at about 510 nm and found an ambipolar lateral diffusion constant of 0.25 ± 0.05 cm 2 /s.

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confidence: 99%

Time-of-flight measurements of charge carrier diffusion in InxGa1−xN/GaN quantum wells

et al. 2011

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“…Generally, the internal quantum efficiency can be evaluated by the temperature dependence of the integrated PL intensity [4,5]. An Arrhenius plot of the normalized integrated PL intensity for the InGaN-related PL emission over the temperature range under investigation was displayed in Figures 8 and 9.…”

Section: Photoluminescence (Pl) Data Analysesmentioning

confidence: 99%

Structural and optical properties of InGaN/GaN multiple quantum well light emitting diodes grown on (1122) facet GaN/sapphire templates by metalorganic chemical vapor deposition

et al. 2011

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We have performed a comparative structural and optical investigation of InGaN/GaN MQW LED wafers grown on (112 2) facet GaN/sapphire templates by Metalorganic Chemical Vapor Deposition. The effect of the growth time of epitaxial lateral overgrowth GaN with (11 2 2) facets on the structural and optical properties were investigated via photoluminescence (PL), PL excitation, time-resolved PL, Raman and SEM measurement on two typical InGaN MQW samples. From temperature dependence PL measurement, we can find that these two samples both exhibit two distinguish peaks attributed to quantum wells with wide range wavelength. Raman E 2 (high) signals revealed a partially relaxation of compressive stress in the facet GaN template. Experimental observations have revealed: (a) a Stokes shift between the emission peak energy and absorption edge and (b) a red shift behavior of emission with decay time (equivalently, a rise in decay time with decreasing emission energy). The large Stokes shift can be attributed to the quantum confined Stark effect (QCSE). The lower-energy side of the InGaN main emission peak is governed mainly by carrier generation in the GaN barriers and subsequent carrier transfer to the InGaN wells. Different amounts of Stokes shift indicate the interface imperfection from longer growth time of epitaxial lateral overgrowth GaN with (1122) facets. Temperature dependence of PL decay time τ PL shows an interesting behavior of τ PL with temperature.

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Temperature‐dependent photoluminescence measurements on a sub‐micrometer length scale on green light emitting InGaN/GaN quantum wells

Danhof

Vierheilig

Schwarz

et al. 2010

Physica Status Solidi (b)

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For an InGaN/GaN multiquantum well sample with low threading dislocation density (TDD), temperature-dependent microphotoluminescence measurements were performed. Evaluation of the behavior of the photoluminescence peak energy leads to the conclusion that even at a length scale of about 500?nm we still see the same S-shape of the temperature-dependent energy shift that was observed on a far larger scale. The behavior of the temperature-dependent full width at half maximum of the spectra and the integrated intensity leads to similar conclusions. We therefore demonstrate that the phenomenon responsible for the S-shape acts on a length scale that is far smaller than 500?nm. In addition, the behavior of the integrated intensity shows a fluctuation of local point defect density in the analyzed sample with its low TDD

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Effects of Growth Temperature and Postgrowth Annealing on Inhomogeneous Luminescence Characteristics of Green-Emitting InGaN Films

Cited by 4 publications

References 11 publications

Time-of-flight measurements of charge carrier diffusion in InxGa1−xN/GaN quantum wells

Time-of-flight measurements of charge carrier diffusion in InxGa1−xN/GaN quantum wells

Structural and optical properties of InGaN/GaN multiple quantum well light emitting diodes grown on (1122) facet GaN/sapphire templates by metalorganic chemical vapor deposition

Temperature‐dependent photoluminescence measurements on a sub‐micrometer length scale on green light emitting InGaN/GaN quantum wells

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