Time-of-flight measurements of charge carrier diffusion in In<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mi>x</mml:mi></mml:msub></mml:math>Ga<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow /><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:math>N/GaN quantum wells

Danhof, Julia; Schwarz, Ulrich; Kaneta, Akio; Kawakami, Yoichi

doi:10.1103/physrevb.84.035324

Cited by 26 publications

(27 citation statements)

References 30 publications

(27 reference statements)

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“…The carrier diffusion lengths in GaN-based QWs have been characterized to be at the order of tens of nanometers. 34 Lateral confinement with micro-fabricated nanostructures can be an effective approach to suppress it. 35,36 To avoid introducing more surface states, the top-down epitaxial growth of nano-LEDs may be a more ideal solution.…”

Section: Temperature the Ratio /mentioning

confidence: 99%

Defect recombination induced by density-activated carrier diffusion in nonpolar InGaN quantum wells

Yang

Zhang

Shi

et al. 2013

Applied Physics Letters

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Abstract:We report on the observation of carrier-diffusion-induced defect emission at high excitation density in a-plane InGaN single quantum wells. When increasing excitation density in a relatively high regime, we observed the emergence of defect-related emission together with a significant reduction in bandedge emission efficiency. The experimental results can be well explained with the density-activated carrier diffusion from localized states to defect states. Such a scenario of density-activated defect recombination, as confirmed by the dependences of photoluminescence on the excitation photon energy and temperature, is a plausible origin of efficiency droop in a-plane InGaN quantum-well light-emitting diodes. a cfzhang@nju.edu.cn b jskwak@sunchon.ac.kr c mxiao@uark.edu

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Section: Temperature the Ratio /mentioning

confidence: 99%

Defect recombination induced by density-activated carrier diffusion in nonpolar InGaN quantum wells

Yang

Zhang

Shi

et al. 2013

Applied Physics Letters

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“…[14]. Also, in experiments published elsewhere [15], we measured a lateral charge carrier diffusion constant of 0.25 cm 2 s À1 , which is too small to explain the depth of the observed intensity fluctuation on a length scale significant for our studies.…”

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confidence: 98%

Local internal quantum efficiency of a green light emitting InGaN/GaN quantum well

Danhof

Schwarz

Meyer

et al. 2011

Physica Status Solidi (b)

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Excitation density-dependent microphotoluminescence measurements were performed on a green light (515nm) emitting InGaN/GaN multiquantum well sample of low threading dislocation density (5x10(7) cm(2)). For the observed structure we find a different shape of the local internal quantum efficiency (IQE) curve at spots of different efficiency. Evaluation of the measured local IQE curves in terms of the standard model including Shockley-Read-Hall (SRH), radiative recombination, and a third order loss term (droop) leads to the conclusion that SRH nonradiative recombination varies spatially on a sub-micrometer length scale while both other terms remain constant

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“…11,24 This thermally-activated carrier transport drives the excitons filling the low energy levels prior to the interband transition. The diameters of nanorods are close or smaller than the carrier diffusion length, [21][22][23] so that the carrier transport will be partially eliminated in nanorods.…”

Section: × 10mentioning

confidence: 99%

“…11,24 This temperature dependence indicates the carrier transport is activated thermally. The carrier transport process, in a time scale of sub-nanosecond, [21][22][23] enables that photon-excited electrons and holes to recombine from the strongly-localized states in MQWs. In nanorods, the size effect has profound impacts on carrier transport process and the temporal evolution behavior of the emission in nanorods diverges from that in MWQs.…”

Section: × 10mentioning

confidence: 99%

Effects of reduced exciton diffusion in InGaN/GaN multiple quantum well nanorods

Jiang¹,

Zhang²,

Wang³

et al. 2012

Opt. Express

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Abstract：We observed different temperature-dependent behaviors of steady and transient emission properties in dry-etched InGaN/GaN multiple-quantum-well (MQW) nanorods and the parent MQWs. To clarify the impacts of nanofabrication on the emission properties, time-resolved photoluminescence spectra were recorded at various temperatures with carrier density in different regimes. The confinement of carrier transport was observed to play an important role to the emission properties in nanorods, inducing different temperature-dependent photoluminescence decay rates between the nanorods and MQWs. Moreover, together with other effects, such as surface damages and partial relaxation of the strain, the confinement effect causes faster recombination of carriers in nanorods.

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Time-of-flight measurements of charge carrier diffusion in InxGa1−xN/GaN quantum wells

Cited by 26 publications

References 30 publications

Defect recombination induced by density-activated carrier diffusion in nonpolar InGaN quantum wells

Defect recombination induced by density-activated carrier diffusion in nonpolar InGaN quantum wells

Local internal quantum efficiency of a green light emitting InGaN/GaN quantum well

Effects of reduced exciton diffusion in InGaN/GaN multiple quantum well nanorods

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