2008
DOI: 10.1016/j.vacuum.2007.10.007
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Effects of growth atmosphere and homo-buffer layer on properties of ZnO films prepared on Si(111) by PLD

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Cited by 8 publications
(5 citation statements)
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“…The XRD and TEM results shown in Figs. 1-3 are wellconsistent with previous reports [29][30][31]. Therefore, 4 wt% Gadoped ZnO thin films with a ð0001Þ½112 0 GZO :ð111Þ½112 MgAl 2 O 4 epitaxial orientation relationship can be grown at low growth temperature of 250 1C by introducing a hydrothermally grown ZnO buffer layer between the GZO thin film and substrate.…”
Section: Resultssupporting
confidence: 90%
“…The XRD and TEM results shown in Figs. 1-3 are wellconsistent with previous reports [29][30][31]. Therefore, 4 wt% Gadoped ZnO thin films with a ð0001Þ½112 0 GZO :ð111Þ½112 MgAl 2 O 4 epitaxial orientation relationship can be grown at low growth temperature of 250 1C by introducing a hydrothermally grown ZnO buffer layer between the GZO thin film and substrate.…”
Section: Resultssupporting
confidence: 90%
“…Therefore, it is believed that our experimental results, which showed improved electrical and optical characteristics of GZO thin film on a buffered substrate, as compared to GZO thin film on a non-buffered substrate, can be attributed to the improved crystal quality, less defects and grain boundaries. Our experimental results are quite consistent with those of previously reported phenomena [26][27][28].…”
Section: Methodssupporting
confidence: 93%
“…Our experimental results of XRD and TEM shown in Figs. 1-3 are also quite consistent with those of previous reports [26][27][28]. By introducing a ZnO buffer layer, epitaxial GZO thin films can be grown even at a low temperature (250 1C) with high Ga doping concentration of 4 wt%.…”
Section: Methodssupporting
confidence: 90%
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“…Therefore, ZnO thin films are promising candidates for applications in short-wavelength light-emitting devices, lasers, field emission devices, solar cells and sensors [1][2][3][4][5][6]. Nanocrystalline ZnO thin films can be produced by several techniques such as reactive evaporation [7], molecular beam epitaxy (MBE), magnetron sputtering technique [8], pulsed laser deposition (PLD) [9], spray pyrolysis [10], sol-gel process [11], chemical vapor deposition, and electrochemical deposition [12].…”
Section: Introductionmentioning
confidence: 99%