2004
DOI: 10.1016/j.ssc.2004.05.016
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Effects of grain size on the dielectric properties and tunabilities of sol–gel derived Ba(Zr0.2Ti0.8)O3 ceramics

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Cited by 258 publications
(72 citation statements)
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“…A 2 hour sintering process leads to BaTi0.8Zr0.2O3 ceramics with diffuse phase transition and with the lowest electrical permittivity maximum amplitude, while 8 hours sintering leads to the least diffuse phase transition and the highest electrical permittivity maximum. * at the interface The grain size dependence of BaTi0.8Zr0.2O3 dielectric properties has been studied by many authors [20][21][22][23][24][25]. Their synthesis methodology and results (average grain size, Tm, T0 and γ) are displayed in Table 3.…”
Section: Methodsmentioning
confidence: 99%
“…A 2 hour sintering process leads to BaTi0.8Zr0.2O3 ceramics with diffuse phase transition and with the lowest electrical permittivity maximum amplitude, while 8 hours sintering leads to the least diffuse phase transition and the highest electrical permittivity maximum. * at the interface The grain size dependence of BaTi0.8Zr0.2O3 dielectric properties has been studied by many authors [20][21][22][23][24][25]. Their synthesis methodology and results (average grain size, Tm, T0 and γ) are displayed in Table 3.…”
Section: Methodsmentioning
confidence: 99%
“…However, there are many causes for size effect in ferroelectrics and it is often difficult to separate true size effect from other factors that change with the size of the system. For instance, the results have been reported in the literature about the size effect in ferroelectric particles associated with the variety of synthesis routes and processing techniques adopted [4][5][6][7][8].…”
Section: Introductionmentioning
confidence: 99%
“…This behavior is in good agreement with previous results by FESEM measurements that BZT thin film with 20-nm thickness seed layer reached a maximum in average grain size. Internal compressive stress occurs to a lesser extent in thin films with larger grains because of the lower concentration of grain boundaries and the direct effect of compressive stress may be the shift of the ionic positions in a unit cell and this causes the change in polarization, while the compressive stress decreases the dielectric constant of thin films [16,17]. Figure 5 shows the leakage current-electric field characteristics of BZT thin films at room temperature.…”
Section: Resultsmentioning
confidence: 99%