Effects of graded distribution of scattering centers on ballistic transport

Abstract

Ballistic quantum transport in a nanoscale metal-oxide-semiconductor field effect transistorThe transmission coefficient of a two dimensional scattering region connected to ideal leads was calculated for the case of electrons interacting with an inhomogeneous distribution of repulsive or attractive scattering centers. The scattering centers with Gaussian profiles were positioned at regular intervals perpendicular to the transport direction, but were spaced according to a power law along this direction. The transmission function was obtained using a scattering formalism based on the R-matrix method. The simulations revealed that although, overall, the transmission coefficient decreases and becomes almost monotonously dependent on energy as the inhomogeneity of both attractive and repulsive scattering centers increases, the redistribution of transmission between open channels depends on the type of scattering centers. V C 2014 AIP Publishing LLC.

Charge localization effects and transport in dendritic nanostructures for photovoltaic applications

“…This model is suitable for simulating electrodeposition processes and it is quite versatile in reproducing different growth conditions [8]. Next, we investigate the charge localization in different types of structures using a coherent scattering formalism, based on the R-matrix method [20][21][22][23][24][25]. This analysis provides the charge transfer characteristics through the DIs, emphasizing the correlation between scattering and the shape and the surface area of the DI.…”

Transparent boundary conditions for time-dependent electron transport in the R-matrix method with applications to nanostructured interfaces

“…The formalism was developed by Wigner and Eisenbud [17] in the field of nuclear physics and later was employed to obtain the transport properties of mesoscopic devices [18,19,20]. It has been further applied to describe coherent charge transport in nanotransistors [21,22,23], thermopower in quantum wires [24] spin dependent transport [25] and to investigate the effects of graded distribution of scattering centers on ballistic transport [26] and charge localization in dendritic interfaces relevant for photovoltaic applications [27]. Here we use the advantages of this approach as a basis for solving the time-dependent problem with TBCs.…”