Rutile-TiO2/hybrid halide perovskite CH3NH3PbI3-xClx interfaces are investigated by ab initio density functional theory calculations. The role of chlorine in achieving enhanced solar cell power conversion efficiencies is in the focus of recent studies, which point to increased carrier mobilities, reduced recombination rates, a driven morphology evolution of the perovskite layer and improved carrier transport across the interface. As it was recently established that chlorine is preferentially localized in the vicinity of the interface and not in the bulk of the perovskite layer, we analyze the changes introduced in the electronic properties by varying the chlorine concentration near the interface. In particular, we discuss the effects introduced in the electronic band structure and show the role of chlorine in the enhanced electron injection into the rutile-TiO2 layer. Taking into account these implications, we discuss the conditions for optimizing the solar cell efficiency in terms of interfacial chlorine concentration.

The feasibility of mixed-cation mixed-halogen perovskites of formula AxA’1−xPbXyX’zX”3−y−z is analyzed from the perspective of structural stability, opto-electronic properties and possible degradation mechanisms. Using density functional theory (DFT) calculations aided by machine-learning (ML) methods, the structurally stable compositions are further evaluated for the highest absorption and optimal stability. Here, the role of the halogen mixtures is demonstrated in tuning the contrasting trends of optical absorption and stability. Similarly, binary organic cation mixtures are found to significantly influence the degradation, while they have a lesser, but still visible effect on the opto-electronic properties. The combined framework of high-throughput calculations and ML techniques such as the linear regression methods, random forests and artificial neural networks offers the necessary grounds for an efficient exploration of multi-dimensional compositional spaces.

Unlike single layer graphene, in the case of AB-stacked bilayer graphene (BLG) one can induce a non-zero energy gap by breaking the inversion symmetry between the two layers using a perpendicular electric field. This is an essential requirement in field-effect applications, particularly since the induced gap in BLG systems can be further tuned by the magnitude of the external electric field. Doping is another way to modify the electronic properties of graphene based systems. We investigate here BLG systems doped with boron and nitrogen in the presence of external electric field, in the framework of density functional theory (DFT) calculations. Highly doped BLG systems are known to behave as degenerate semiconductors, where the Fermi energy depends on the doping concentration but, in addition, we show that the electronic properties drastically depend also on the applied electric field. By changing the magnitude and the orientation of the electric field, the gap size and position relative to the Fermi level may be tuned, essentially controlling the effect of the extrinsic doping. In this context, we discuss in how far the external electric field may suitably adjust the effective doping and, implicitly, the conduction properties of doped BLG systems.

We propose a novel class of bulk metamaterials, termed helical graphite (HG), which is able to produce intense magnetic fields under an external electrical bias.

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