Effects of germanium doping on the behavior of oxygen and carbon impurities and impurity-related complexes in Si

Londos, C. A.; Andrianakis, A.; Emtsev, V. V.; Oganesyan, G. A.; Ohyama, H.

doi:10.1016/j.physb.2009.08.145

Cited by 16 publications

(13 citation statements)

References 32 publications

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“…The deep level concentrations are always somewhat higher in the germanium doped substrates in agreement with the results of Londos [11,12,13].…”

supporting

confidence: 89%

“…Recently, Londos et al [11,12,13] performed an extensive study of the influence of germanium doping on the behavior of oxygen and carbon impurity related complexes in electron irradiated silicon. Their observations were explained by assuming that for germanium concentrations below 10 20 cm −3 , germanium atoms act as temporary traps for vacancies and as such reduce the recombination rate of intrinsic point defects and Frenkel pairs.…”

Section: Introductionmentioning

confidence: 99%

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Germanium doping for improved silicon substrates and devices

Vanhellemont

Chen

Lauwaert

et al. 2011

Journal of Crystal Growth

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During the last decade, the 300 mm silicon wafer has been optimized and one is studying the move to 450 mm crystals and wafers. The ever increasing silicon crystal diameter leads to two important trends with respect to substrate characteristics: the interstitial oxygen concentration decreases while the size of grown in voids (COP's) in vacancy-rich crystals is increasing.The first effect is due to the large melt in which movements have to be controlled and partly suppressed by the use of magnetic fields. This magnetic confinement leads to a more uniform dopant incorporation but at the same time to a more limited transport of oxygen from the quartz crucible to the melt and the growing crystal. The reduced interstitial oxygen concentration and the lower thermal budget of modern device processing leads to strongly reduced oxygen precipitation and thus internal gettering capacity.The increasing COP size (accompanied by a decreasing density) is caused by the decreasing pulling rate and thermal gradient that have to be used in order to avoid dislocation formation. The slower cooling of the crystal leads to a decreased void nucleation rate and at the same time to an increased thermal budget for void growth as well as a larger number of vacancies available per void. Journal of Crystal Growth November 9, 2010 In the present paper the effect of germanium doping in the range between 10 16 cm −3 and 10 19 cm −3 on COP formation and oxygen precipitation is discussed and illustrated. Also the beneficial effect of germanium doping with respect to wafer breakage during processing, with respect to the suppression of thermal donor formation and with respect to improving device radiation hardness is addressed. Preprint submitted to

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“…The deep level concentrations are always somewhat higher in the germanium doped substrates in agreement with the results of Londos [11,12,13].…”

supporting

confidence: 89%

Section: Introductionmentioning

confidence: 99%

Germanium doping for improved silicon substrates and devices

Vanhellemont

Chen

Lauwaert

et al. 2011

Journal of Crystal Growth

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“…In effect this changes the balance between the above two reactions and their contribution in the VO annealing. Notably, for Ge-doped Si 29 it was argued that the larger the Ge content, the stronger and more extensive the strain fields in the material. As a result, the binding energy of self-interstitials in the large self-interstitial clusters 30 As we succinctly mentioned in the results section the shape of the VO 2 band is disturbed and Lorentzian profiling has shown the existence of two additional contributed bands at 892 and 896 cm -1 .These bands are similar to those observed in our previous work 23 in n-type Si 1-x Ge x .…”

Section: Lindström and Svensson 15 Have Established That A Large Percmentioning

confidence: 99%

Vacancy-oxygen defects in p-type Si1−xGex

Sgourou

Londos

Chroneos

2014

Journal of Applied Physics

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Oxygen-vacancy defects and in particular the VO pairs (known as A-centers) are common defects in silicon (Si) with a deleterious impact upon its properties. Although oxygenvacancy defects have been extensively studied in Si there is far less information about their properties in p-type doped silicon germanium (Si 1-x Ge x ). Here we use Fourier transform infrared spectroscopy (FTIR) to determine the production and evolution of oxygen-vacancy defects in p-type Si 1-x Ge x . It was determined that the increase of Ge content affects the production and the annealing behavior of the VO defect as well as its conversion to the VO 2 defect. In particular both the VO production and the VO annealing

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“…29 In previous studies we have investigated the effect of Ge doping on the behavior of radiation induced defects in Si. [29][30][31][32][33] In the present work, we extended these studies by investigating the effect of Sn doping on the oxygen-related (VO, VO 2 ) and The carbon concentration was calculated from its 606-cm…”

mentioning

confidence: 99%

Effect of tin doping on oxygen- and carbon-related defects in Czochralski silicon

Chroneos

Londos

Sgourou

2011

Journal of Applied Physics

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Experimental and theoretical techniques are used to investigate the impact of tin doping on the formation and the thermal stability of oxygen-and carbon-related defects in electron-irradiated Czochralski silicon. The results verify previous reports that Sn doping reduces the formation of the VO defect and suppresses its conversion to the VO 2 defect. Within experimental accuracy, a small delay in the growth of the VO 2 defect is observed. Regarding carbon-related defects, it is determined that Sn doping leads to a reduction in the formation of the C i O i , C i C s , and C i O i (Si I ) defects although an increase in their thermal stability is observed. The impact of strain induced in the lattice by the larger tin substitutional atoms, as well as their association with intrinsic defects and carbon impurities, can be considered as an explanation to account for the above observations. The density functional theory calculations are used to study the interaction of tin with lattice vacancies and oxygen-and carbon-related clusters. Both experimental and theoretical results demonstrate that tin co-doping is an efficient defect engineering strategy to suppress detrimental effects because of the presence of oxygen-and carbon-related defect clusters in devices.

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Effects of germanium doping on the behavior of oxygen and carbon impurities and impurity-related complexes in Si

Cited by 16 publications

References 32 publications

Germanium doping for improved silicon substrates and devices

Germanium doping for improved silicon substrates and devices

Vacancy-oxygen defects in p-type Si1−xGex

Effect of tin doping on oxygen- and carbon-related defects in Czochralski silicon

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