Vacancy-oxygen defects in <i>p</i>-type Si1−xGex

Sgourou, E. N.; Londos, C. A.; Chroneos, Alexander

doi:10.1063/1.4896728

Cited by 3 publications

(3 citation statements)

References 39 publications

(47 reference statements)

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“…2a, with the prior RTP at 1250°C, the Cz-Si 1-x Ge x specimen has lower Au s concentration than the Cz-Si counterpart. Accordingly, it is derived that the formation of VO m complexes during the RTP at 1250°C is to a certain extent suppressed in CzSi 1-x Ge x in comparison with that in Cz-Si, which is in agreement with the previous theoretical calculation and experiment results obtained for the electron-irradiated Si 1-x Ge x [15,16,[30][31][32][33]. The reason for the suppressed formation of VO m complexes in Cz-Si 1-x Ge x will be explored later.…”

Section: Evaluation Of Rtp-induced Vo M Complexessupporting

confidence: 85%

“…Markevich et al [14] have found at least three configurations of V-O complexes with distinct levels in Cz-Si 1-x Ge x , among which the most stable configuration consists of a Si-O-Si unit and a Ge-Si reconstructed bond in a vacancy. Sgourou et al [15,16] found that both the VO production and the VO annealing temperature were reduced and, moreover, the conversion of VO into VO 2 is suppressed in Cz-Si 1-x Ge x with respect to the case of Cz-Si. By comparison, the formation of V-O complexes in Cz-Si 1-x Ge x during the high temperature RTP has hardly been investigated so far.…”

Section: Introductionmentioning

confidence: 96%

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Rapid thermal processing induced vacancy-oxygen complexes in Czochralski-grown Si1−xGex

Dong

Zhao

et al. 2015

J Mater Sci: Mater Electron

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Rapid thermal processing (RTP) induced vacancy-oxygen (VO m m C 2) complexes can act as the precursors for oxide precipitate nucleation thus enhancing oxygen precipitation (OP) in Czochralski silicon (Cz-Si). In our preceding work, we have reported that 10 20 cm -3 germanium (Ge)-doping in Cz-Si facilitates the formation of VO m complexes during the high temperature RTP. Then, how the even higher Ge-doping at 10 21 cm -3 in Cz-Si affects the formation of VO m complexes during the RTP is an interesting issue to be addressed. Actually, such high Ge-doping in Cz-Si forms Cz-Si 1-x Ge x alloys. In the present work, we have investigated the formation of VO m complexes in Cz-Si 1-x Ge x (x = 0.035-0.038) wafers subjected to the high temperature RTP. The Cz-Si 1-x Ge x wafers are found to exhibit much weaker OP than Cz-Si counterparts when subjected to the same two-step (nucleation-growth) anneal following the high temperature RTP, indicating that the formation of VO m complexes during the RTP is suppressed in Cz-Si

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Section: Evaluation Of Rtp-induced Vo M Complexessupporting

confidence: 85%

Section: Introductionmentioning

confidence: 96%

Rapid thermal processing induced vacancy-oxygen complexes in Czochralski-grown Si1−xGex

Dong

Zhao

et al. 2015

J Mater Sci: Mater Electron

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“…Furthermore, the VO 2 band is largerly suppressed in the latter sample. Interestingly, the suppression of the VO 2 band due to Pb doping (with [Pb] = 10 18 cm -1 ) is almost the same with the suppression of VO 2 in n-type and p-type Si 1-x Ge x material [32,33] with x = 5.6 % that is with Ge content at least three orders of magnitude larger than that of Pb. Figure 3 shows the production of the VO, C i O i and C i C s / C i O i versus covalent radius of the isovalent dopant.…”

Section: Resultssupporting

confidence: 53%

Engineering VO, CiOi and CiCs defects in irradiated Si through Ge and Pb doping

Londos

Angeletos

Sgourou

et al. 2015

J Mater Sci: Mater Electron

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Carbon and oxygen associated defects such as VO, C i O i and C i C s are common in electron irradiated silicon. Their presence can affect the material and electronic properties of Si. A way to limit their impact and understand their behavior is through doping with large isovalent dopants. The aim of the present study is to investigate and compare the effect of Ge and Pb doping on VO, C i O i and C i C s defects in electron irradiated Si mainly by using Fourier transform infrared spectroscopy in conjunction with recent density functional theory calculations. It was determined that the production of these defects is reduced by the presence of the isovalent impurity and more significantly for Pb doping as compared to Ge doping. Upon annealing the conversion to secondary defects (in particular VO to VO 2 and C i O i to C s O 2i ) is also affected by the isovalent dopants. Interestingly, the conversion ratio a VO2 /a VO is reduced with the increase of the isovalent radius, whereas the a CsO2i /a CiOi is enhanced. Theoretical calculations were used to corroborate these findings.

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Effect of germanium doping on the formation kinetics of vacancy-dioxygen complexes in high dose neutron irradiated crystalline silicon

Dong

Chen

et al. 2017

Journal of Applied Physics

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The effect of germanium (Ge) doping on the formation kinetics of vacancy-dioxygen (VO2) complexes in high dose neutron irradiated crystalline silicon (c-Si) has been quantitatively investigated using infrared spectroscopy at 10 K. It is observed that Ge doping of 1019 cm−3 enhances the formation of vacancy-oxygen (VO) complexes by ∼15% during neutron irradiation and slightly suppresses the conversion of VO into VO2 complexes. By studying the generation kinetics of VO2 complexes in the temperature range of 300–345 °C, it is found that the activation energies of VO2 generation are determined to be 1.52 and 1.71 eV in the reference and Ge-doped c-Si, respectively. According to the theory for diffusion limited reactions, it is suggested that Ge doping can retard the VO diffusion in c-Si and therefore reduce the capture probability of Oi for VO complexes. This may be attributed to the temporary trapping of vacancies by Ge atoms. Hence, the formation of VO2 complexes in c-Si is slightly suppressed by Ge doping.

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Vacancy-oxygen defects in p-type Si1−xGex

Cited by 3 publications

References 39 publications

Rapid thermal processing induced vacancy-oxygen complexes in Czochralski-grown Si1−xGex

Rapid thermal processing induced vacancy-oxygen complexes in Czochralski-grown Si1−xGex

Engineering VO, CiOi and CiCs defects in irradiated Si through Ge and Pb doping

Effect of germanium doping on the formation kinetics of vacancy-dioxygen complexes in high dose neutron irradiated crystalline silicon

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