Effects of Gd<sub>2</sub>O<sub>3</sub> Gate Dielectric on Proton-Irradiated AlGaN/GaN HEMTs

Gao, Z.; Romero, M. F.; Redondo-Cubero, A.; Pampillón, María Ángela; Andrés, E. San; Calle, F.

doi:10.1109/led.2017.2682795

Cited by 16 publications

(9 citation statements)

References 34 publications

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“…Table 5 summarizes a survey of the most promising results obtained in normallyon AlGaN/GaN MISHEMTs using different high-κ dielectrics. Indeed, not only are Al2O3 [119][120][121] and HfO2 [122][123][124][125] indicated as suitable dielectrics, but many other gate oxide layers (Y2O3 [126], HZO [127], Ta2O5 [128], La2O3 [125], ZrO2 [129][130][131], Gd2O3 [132]) have shown promising results when integrated into GaN HEMT technology. 6 and references therein.…”

Section: Binary High-κ Oxides For Gan-based Mishemtsmentioning

confidence: 99%

Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices

et al. 2022

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High-κ dielectrics are insulating materials with higher permittivity than silicon dioxide. These materials have already found application in microelectronics, mainly as gate insulators or passivating layers for silicon (Si) technology. However, since the last decade, the post-Si era began with the pervasive introduction of wide band gap (WBG) semiconductors, such as silicon carbide (SiC) and gallium nitride (GaN), which opened new perspectives for high-κ materials in these emerging technologies. In this context, aluminium and hafnium oxides (i.e., Al2O3, HfO2) and some rare earth oxides (e.g., CeO2, Gd2O3, Sc2O3) are promising high-κ binary oxides that can find application as gate dielectric layers in the next generation of high-power and high-frequency transistors based on SiC and GaN. This review paper gives a general overview of high-permittivity binary oxides thin films for post-Si electronic devices. In particular, focus is placed on high-κ binary oxides grown by atomic layer deposition on WBG semiconductors (silicon carbide and gallium nitride), as either amorphous or crystalline films. The impacts of deposition modes and pre- or postdeposition treatments are both discussed. Moreover, the dielectric behaviour of these films is also presented, and some examples of high-κ binary oxides applied to SiC and GaN transistors are reported. The potential advantages and the current limitations of these technologies are highlighted.

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Section: Binary High-κ Oxides For Gan-based Mishemtsmentioning

confidence: 99%

Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices

et al. 2022

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“…Electronics used in harsh space environments must be resistant to damage or malfunctions caused by ionizing radiation. In order to evaluate radiation hardness, radiation irradiation effects on the device properties have been explored in MIS-HEMTs with various gate dielectric layers, namely, SiN/Al 2 O 3 [ 7 , 8 ], SiN [ 9 , 10 ], Gd 2 O 3 [ 11 ], MgO/Sc 2 O 3 [ 12 ], and poly-AlN/SiN [ 13 ]. However, these researches have focused on the impact of dielectric on radiation resistance.…”

Section: Introductionmentioning

confidence: 99%

Effects of Proton Irradiation on the Current Characteristics of SiN-Passivated AlGaN/GaN MIS-HEMTs Using a TMAH-Based Surface Pre-Treatment

et al. 2021

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This study investigated the combined effects of proton irradiation and surface pre-treatment on the current characteristics of Gallium Nitride (GaN)-based metal-insulator-semiconductor high-electron-mobility-transistors (MIS-HEMTs) to evaluate the radiation hardness involved with the Silicon Nitride (SiN) passivation/GaN cap interface. The impact of proton irradiation on the static and dynamic current characteristics of devices with and without pre-treatment were analyzed with 5 MeV proton irradiation. In terms of transfer characteristics before and after the proton irradiation, the drain current of the devices without and with pre-treatment were reduced by an increase in sheet and contact resistances after the proton irradiation. In contrast with the static current characteristics, the gate-lag characteristics of the device with pre-treatment were significantly degenerated. In the device with pre-treatment, the hydrogen passivation for surface states of the GaN cap was formed by the pre-treatment and SiN deposition processes. Since the hydrogen passivation was removed by the proton irradiation, the newly created vacancies resulted in the degeneration of gate-lag characteristics. After nine months in an ambient atmosphere, the gate-lag characteristics of the device with pre-treatment were recovered because of the hydrogen recombination. These results demonstrated that the radiation hardness of MIS-HEMTs was affected by the SiN/GaN interface quality.

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“…The degradation mechanisms of the devices could be summarized as trap states generation [10], hot-electron generation [11], gate metal instabilities [12], passivation breakdown [13], inverse piezoelectric effects [14] and so on. For 0.15 m gate length devices, the effects of electric field have proven to be important in reliability [8].…”

Section: Introductionmentioning

confidence: 99%

Degradation mechanism of 0.15 μm AlGaN/GaN HEMTs: effects of hot electrons

Gao

Rampazzo

Meneghini

et al. 2020

Microelectronics Reliability

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The degradation mechanisms of AlGaN/GaN HEMTs adopting Fe and C co-doping, with high and low carbon doping concentration were investigated by means of hot-electron step stress and 24 hours' stress tests. Firstly, DC and EL characterization at room temperature are summarized, then the parametric evolution during hot-electron step stress tests at the semi-on state was compared, the assumption for the degradation mechanism is that hot-electrons activated the pre-existing traps in the buffer, attenuate the electric field in the gate drain access region and damaging the gate contact, the parametric evolution during constant stresses is discussed.

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Effects of Gd₂O₃ Gate Dielectric on Proton-Irradiated AlGaN/GaN HEMTs

Cited by 16 publications

References 34 publications

Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices

Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices

Effects of Proton Irradiation on the Current Characteristics of SiN-Passivated AlGaN/GaN MIS-HEMTs Using a TMAH-Based Surface Pre-Treatment

Degradation mechanism of 0.15 μm AlGaN/GaN HEMTs: effects of hot electrons

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Effects of Gd2O3 Gate Dielectric on Proton-Irradiated AlGaN/GaN HEMTs

Cited by 16 publications

References 34 publications

Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices

Structural and Insulating Behaviour of High-Permittivity Binary Oxide Thin Films for Silicon Carbide and Gallium Nitride Electronic Devices

Effects of Proton Irradiation on the Current Characteristics of SiN-Passivated AlGaN/GaN MIS-HEMTs Using a TMAH-Based Surface Pre-Treatment

Degradation mechanism of 0.15 μm AlGaN/GaN HEMTs: effects of hot electrons

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Effects of Gd₂O₃ Gate Dielectric on Proton-Irradiated AlGaN/GaN HEMTs