Degradation mechanism of 0.15 μm AlGaN/GaN HEMTs: effects of hot electrons

Gao, Z.; Rampazzo, F.; Meneghini, Matteo; Santi, Carlo De; Chiocchetta, Francesca; Marcon, Daniele; Meneghesso, Gaudenzio; Zanoni, Enrico

doi:10.1016/j.microrel.2020.113905

Cited by 6 publications

(7 citation statements)

References 21 publications

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“…When the recovery phase is evaluated in OFF-state with V DS lower than 4 V, negligible recovery of V TH (<10 mV) occurs [see Fig. 6(b)]; for higher V DS , further trapping occurs and an additional positive V TH shift is observed [35]. On the contrary, when the device is biased in a semi-ON state (V GS = −2 V) with V DS ≥ 3 V, significant recovery occurs, i.e., device current is required to promote detrapping.…”

Section: Threshold Voltage Transientsmentioning

confidence: 99%

Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs

Zhan,

Rampazzo,

De Santi

et al. 2023

IEEE Trans. Electron Devices

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DC characteristics of AlGaN/GaN HEMTs with different thickness values of the undoped GaN channel layer were compared. An abnormal transconductance (g m ) overshoot accompanied by a negative threshold voltage (V TH ) shift was observed during I DS -V GS sweep in devices with thinner GaN layer. At the same time, a non-monotonic increase in gate current was observed. In OFF-state, electron trapping occurs in the undoped GaN layer or at the GaN/AlN interface, leading to a positive V TH shift. When the device is turning on at a sufficiently high V DS , electron de-trapping occurs due to trap impact-ionization; consequently, V TH and therefore I D suddenly recovers, leading to the g m overshoot effect. These effects are attributed to electron trap impact-ionization and consequent modulation of the device's electric field.

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Section: Threshold Voltage Transientsmentioning

confidence: 99%

Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs

Zhan,

Rampazzo,

De Santi

et al. 2023

IEEE Trans. Electron Devices

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“…Z. Gao et al investigated the degradation mechanisms of AlGaN/GaN HEMTs adopting Fe and C codoping with high and low carbon doping concentrations by tests [17]. However, the biggest bottleneck of current reliability research on GaN devices is the lack of large amounts of high-quality data and defect evaluation through long-term experiments.…”

Section: Introductionmentioning

confidence: 99%

Degradation Prediction of GaN HEMTs under Hot-Electron Stress Based on ML-TCAD Approach

et al. 2022

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In this paper, a novel approach that combines technology computer-aided design (TCAD) simulation and machine learning (ML) techniques is demonstrated to assist the analysis of the performance degradation of GaN HEMTs under hot-electron stress. TCAD is used to simulate the statistical effect of hot-electron-induced, electrically active defects on device performance, while the artificial neural network (ANN) algorithm is tested for reproducing the simulation results. The results show that the ML-TCAD approach can not only rapidly obtain the performance degradation of GaN HEMTs, but can accurately predict the progressive failure under the work conditions with a mean squared error (MSE) of 0.2, informing the possibility of quantitative failure data analysis and rapid defect extraction via the ML-TCAD approach.

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“…In the off-state biased HEMTs, the inverse piezoelectric effect or gate degradation will appear if the applied bias exceeds the so-called "critical voltage", which is often obtained by performing reverse bias step-stress experiments. The inverse piezoelectric effect and gate degradation are respectively related to the formation of crystallographic defects due to the strain relaxation [5] , and the traps generated at the gate/AlGaN interface [7] . Thus, the gate degradation could happen at a relatively low reverse bias compared to the inverse piezoelectric effect.…”

Section: Introductionmentioning

confidence: 99%

Effect of the post-gate annealing on the gate reliability of AlGaN/GaN HEMTs

Chen¹,

Wang²,

Li³

et al. 2021

J. Semicond.

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In this paper, we investigated the effect of post-gate annealing (PGA) on reverse gate leakage and the reverse bias reliability of Al0.23Ga0.77N/GaN high electron mobility transistors (HEMTs). We found that the Poole–Frenkel (PF) emission is dominant in the reverse gate leakage current at the low reverse bias region (V th < V G < 0 V) for the unannealed and annealed HEMTs. The emission barrier height of HEMT is increased from 0.139 to 0.256 eV after the PGA process, which results in a reduction of the reverse leakage current by more than one order. Besides, the reverse step stress was conducted to study the gate reliability of both HEMTs. After the stress, the unannealed HEMT shows a higher reverse leakage current due to the permanent damage of the Schottky gate. In contrast, the annealed HEMT shows a little change in reverse leakage current. This indicates that the PGA can reduce the reverse gate leakage and improve the gate reliability.

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Degradation mechanism of 0.15 μm AlGaN/GaN HEMTs: effects of hot electrons

Cited by 6 publications

References 21 publications

Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs

Transconductance Overshoot, a New Trap-Related Effect in AlGaN/GaN HEMTs

Degradation Prediction of GaN HEMTs under Hot-Electron Stress Based on ML-TCAD Approach

Effect of the post-gate annealing on the gate reliability of AlGaN/GaN HEMTs

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