Effects of Gate Field Plates on the Surface State Related Current Collapse in AlGaN/GaN HEMTs

Huang, Huolin; Liang, Yung C.; Samudra, Ganesh S.; Chang, Tsin‐Yuan; Huang, Chih-Fang

doi:10.1109/tpel.2013.2288644

Cited by 98 publications

(46 citation statements)

References 28 publications

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“…This type of field plate alleviates the high electric field formed at the edge of the gate by reducing the peak electric field as demonstrated by simulation data [8,11]. Applying field plates leads not only to an improved breakdown voltage but also to a reduction of the gate leakage current and the electron trapping, which, in turn, improves the current collapse performance [7,9,10].…”

Section: Introductionmentioning

confidence: 97%

Characteristics of a field plate connected to T-shaped gate in AlGaN/GaN HEMTs

Cho

Ahn

Kim

et al. 2015

Journal of the Korean Physical Society

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An AlGaN/GaN high electron mobility transistor (HEMT) with a T-shaped gate employing a gate-foot-connected field plate is presented. Similar to other devices with gate connected field plates the device described in this paper is a variation of the Γ-shaped gate with the "head" of the Tshaped gate attached at the top. The proposed device has a higher breakdown voltage and a lower leakage current due to the attached field plate while maintaining the advantages of the T-shaped gate structure, which are a low gate resistance and a low noise level. In addition, the field plate deposition step during the fabrication process involves a partial covering of the "foot" of the gate which showed a possibility for a gate length reduction.

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Section: Introductionmentioning

confidence: 97%

Characteristics of a field plate connected to T-shaped gate in AlGaN/GaN HEMTs

Cho

Ahn

Kim

et al. 2015

Journal of the Korean Physical Society

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“…GaN-based high electron mobility transistors (HEMTs) have drawn considerable attention in the applications of microwave and power switching devices due to their excellent material properties such as high breakdown field, large carrier mobility, and high-density 2-dimensional electron gas (2DEG) at the heterojunction interface [1][2][3][4][5]. Such standard AlGaN/GaN HEMTs are naturally normally-on [6][7][8][9][10].…”

Section: Introductionmentioning

confidence: 99%

Formation of combined partially recessed and multiple fluorinated-dielectric layers gate structures for high threshold voltage GaN-based HEMT power devices

Huang

Liang

2015

Solid-State Electronics

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“…Additional application of the so-called field plate structure, provided even higher breakdown voltages and lower gate leakage currents [4]. On the other hand, one of the major drawbacks of these devices, known as dynamic on -resistance or current collapse phenomena, has been the topic of many research activities in the past couple of years and significant technological improvement has been obtained in this direction as well [5,6].…”

Section: Introductionmentioning

confidence: 99%

Physical modeling and optimization of a GaN HEMT design with a field plate structure for high frequency application

Cucak

Vasić

García

et al. 2014

2014 IEEE Energy Conversion Congress and Exposition (ECCE)

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Abstract-In this paper, physical modeling of a GaN HEMT with a field plate structure is proposed, with the objective of providing the connection between the physical design parameters of the device (geometry, Al mole fraction, type of the field plate, etc) and on-resistance together with parasitic capacitances of the device. In this way, it is possible to optimize the design of a switching device for a particular application, which in our case is a high frequency DC DC converter for Envelope Tracking and Envelope Elimination and Restoration techniques. In this work, extrinsic models for output characteristics together with input, output and reverse capacitance of a depletion mode GaN HEMT with a field plate structure were obtained. The obtained physical model was implemented in a Simplorer simulation model of a high frequency buck converter and verified by the prototype that employed modeled GaN HEMT, operating at 7, 15 and 20MHz of switching frequency. Comparing to the measured efficiency curves, simulation results showed good agreement, especially in the low power range at high switching frequency, which are the operating conditions in our application.

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Effects of Gate Field Plates on the Surface State Related Current Collapse in AlGaN/GaN HEMTs

Cited by 98 publications

References 28 publications

Characteristics of a field plate connected to T-shaped gate in AlGaN/GaN HEMTs

Characteristics of a field plate connected to T-shaped gate in AlGaN/GaN HEMTs

Formation of combined partially recessed and multiple fluorinated-dielectric layers gate structures for high threshold voltage GaN-based HEMT power devices

Physical modeling and optimization of a GaN HEMT design with a field plate structure for high frequency application

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