Effects of Gamma Irradiation on Magnetic Properties of Double-Interface CoFeB/MgO Multifilms

Bi, Wang; Wang, Zhaohao; Cao, Kaihua; Bi, Xiaofang; Zhao, Yuanfu; Zhang, Youguang; Zhao, Weisheng

doi:10.1109/tns.2018.2885338

Cited by 10 publications

(8 citation statements)

References 26 publications

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“…Wang et al [ 120 ] investigated CoFeB/MgO’s perpendicular-anisotropy magnetic tunnel junction and found that the magnetism was destroyed if the radiation dose was sufficiently high.…”

Section: Effects Of -Ray Irradiationmentioning

confidence: 99%

“…Wang et al measured the magnetic properties of double-interface CoFeB/MgO perpendicular-anisotropy magnetic tunnel junctions (p-MTJ) [ 120 ]. The MTJ films were deposited on thermally oxidized Si substrates with CuN/Ta seed layers, consisting of [Co(0.5)/Pt(0.2)]

/Co(0.6)/Ru(0.8)/Co(0.6)/[Co(0.5)/Pt(0.2)]

/W(0.25)/CoFeB(1.0)/ MgO(0.8)/CoFeB(1.3)/W(0.2)/CoFeB(0.5)/MgO(0.75)/Ta(3.0)/Ru(8.0) (numbers in parentheses are thickness in nanometers).…”

Section: Effects Of -Ray Irradiationmentioning

confidence: 99%

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Electromagnetic Radiation Effects on MgO-Based Magnetic Tunnel Junctions: A Review

et al. 2023

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Magnetic tunnel junctions (MTJs) have been widely utilized in sensitive sensors, magnetic memory, and logic gates due to their tunneling magnetoresistance. Moreover, these MTJ devices have promising potential for renewable energy generation and storage. Compared with Si-based devices, MTJs are more tolerant to electromagnetic radiation. In this review, we summarize the functionalities of MgO-based MTJ devices under different electromagnetic irradiation environments, with a focus on gamma-ray radiation. We explore the effects of these radiation exposures on the MgO tunnel barriers, magnetic layers, and interfaces to understand the origin of their tolerance. This review enhances our knowledge of the radiation tolerance of MgO-based MTJs, improves the design of these MgO-based MTJ devices with better tolerances, and provides information to minimize the risks of irradiation under various irradiation environments. This review starts with an introduction to MTJs and irradiation backgrounds, followed by the fundamental properties of MTJ materials, such as the MgO barrier and magnetic layers. Then, we review and discuss the MTJ materials and devices’ radiation tolerances under different irradiation environments, including high-energy cosmic radiation, gamma-ray radiation, and lower-energy electromagnetic radiation (X-ray, UV–vis, infrared, microwave, and radiofrequency electromagnetic radiation). In conclusion, we summarize the radiation effects based on the published literature, which might benefit material design and protection.

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“…Wang et al [ 120 ] investigated CoFeB/MgO’s perpendicular-anisotropy magnetic tunnel junction and found that the magnetism was destroyed if the radiation dose was sufficiently high.…”

Section: Effects Of -Ray Irradiationmentioning

confidence: 99%

/Co(0.6)/Ru(0.8)/Co(0.6)/[Co(0.5)/Pt(0.2)]

/W(0.25)/CoFeB(1.0)/ MgO(0.8)/CoFeB(1.3)/W(0.2)/CoFeB(0.5)/MgO(0.75)/Ta(3.0)/Ru(8.0) (numbers in parentheses are thickness in nanometers).…”

Section: Effects Of -Ray Irradiationmentioning

confidence: 99%

Electromagnetic Radiation Effects on MgO-Based Magnetic Tunnel Junctions: A Review

et al. 2023

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“…It is pointed out that MTJs with a single-crystalline MgO(100) barrier could achieve a giant TMR up to 1000% in the theoretical calculation 9 and 604% in experimental observation 10 . With the rapid scaling of process nodes and the popular application of STT-MRAM instead of Toggle-MRAM, there has been a great interest in TID radiation effects on MgO-based magnetic tunnel junctions 11 . Ren et al 12 and Hughes et al 13 respectively studied the cobalt-60 gamma-ray radiation tolerance of micrometer-scale and nanometerscale MTJs with in-plane magnetic anisotropy (i-MTJs).…”

Section: High-dose X-ray Radiation Induced Mgo Degradation and Breakd...mentioning

confidence: 99%

High-dose X-ray radiation induced MgO degradation and breakdown in spin transfer torque magnetic tunnel junctions

Shi

Yin-quan

et al. 2022

Sci Rep

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Magnetic tunnel junction (MTJ) with magnesium oxide (MgO) tunnel barrier is the core element of spin transfer torque-based magnetic random access memory. For the application in the space environment, the total ionizing dose radiation effects on MTJs need to be evaluated. In this work, the MTJs were exposed to X-ray radiation with different doses of up to 10 Mrad(Si). Measurements of current induced magnetization switching (CIMS) behavior of these MTJs were performed before and after radiation. The results show negligible changes in the tunneling magnetoresistance and current switching properties after 8 Mrad(Si) X-ray radiation. However, with a total dose of 9 Mrad(Si), a significant reduction in junction resistance of a fairly large number of MTJs was observed, which showed characteristics of MTJ breakdown. Moreover, in this study, all experimental MTJs became functionally disabled due to MgO breakdown under 10 Mrad(Si) X-ray radiation. The CoFeB/MgO/CoFeB interface microstructure was observed using X-ray photoelectron spectroscopy and high-resolution transmission electron microscopy (HRTEM). Interfacial structural results indicate that the MgO degradation and breakdown behavior caused by X-ray ionizing radiation can give rise to radiation-induced oxygen vacancies across the tunnel barrier oxide layer.

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“…Wang et al [89] investigated higher levels of gamma irradiation in CoFeB/MgO perpendicular MTJ, with total dose as high as 475 Mrad(Si) in order to simulate deep space mission conditions. At the highest levels of 247 and 475 Mrad(Si), the films effectively lost their ferromagnetic nature and even started physically cracking (see Fig.…”

Section: A Stt Magnetic Memorymentioning

confidence: 99%

mentioning

confidence: 99%

Radiation Effects in Advanced and Emerging Nonvolatile Memories

Marinella

2021

IEEE Trans. Nucl. Sci.

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Despite hitting major roadblocks in 2-D scaling, NAND flash continues to scale in the vertical direction and dominate the commercial nonvolatile memory market. However, several emerging nonvolatile technologies are under development by major commercial foundries or are already in small volume production, motivated by storage-class memory and embedded application drivers. These include spin-transfer torque magnetic random access memory (STT-MRAM), resistive random access memory (ReRAM), phase change random access memory (PCRAM), and conductive bridge random access memory (CBRAM). Emerging memories have improved resilience to radiation effects compared to flash, which is based on storing charge, and hence may offer an expanded selection from which radiation-tolerant system designers can choose from in the future. This review discusses the material and device physics, fabrication, operational principles, and commercial status of scaled 2-D flash, 3-D flash, and emerging memory technologies. Radiation effects relevant to each of these memories are described, including the physics of and errors caused by total ionizing dose, displacement damage, and single-event effects, with an eye toward the future role of emerging technologies in radiation environments.

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Effects of Gamma Irradiation on Magnetic Properties of Double-Interface CoFeB/MgO Multifilms

Cited by 10 publications

References 26 publications

Electromagnetic Radiation Effects on MgO-Based Magnetic Tunnel Junctions: A Review

Electromagnetic Radiation Effects on MgO-Based Magnetic Tunnel Junctions: A Review

High-dose X-ray radiation induced MgO degradation and breakdown in spin transfer torque magnetic tunnel junctions

Radiation Effects in Advanced and Emerging Nonvolatile Memories

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