Effects of Gallium Nitride (GaN) Cascode FETs on the Efficiency of an Interleaved DC-DC Converter

Alharbi, Saleh S.; Alharbi, Salah S.; Matin, Mohammad A.

doi:10.1109/eit.2018.8500116

Cited by 5 publications

(3 citation statements)

References 19 publications

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“…In high-current applications such as in the battery interface (for example, in a 48 V mild-hybrid system), the DC-DC converter is arranged with bidirectional switching legs in an interleaved solution [46]. The GaN FET used must be automotive-qualified.…”

Section: Hv Device Imentioning

confidence: 99%

Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives

Musumeci

Barba

2023

Energies

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High-electron-mobility transistors based on gallium nitride technology are the most recently developed power electronics devices involved in power electronics applications. This article critically overviews the advantages and drawbacks of these enhanced, wide-bandgap devices compared with the silicon and silicon carbide MOSFETs used in power converters. High-voltage and low-voltage device applications are discussed to indicate the most suitable area of use for these innovative power switches and to provide perspective for the future. A general survey on the applications of gallium nitride technology in DC-DC and DC-AC converters is carried out, considering the improvements and the issues expected for the higher switching transient speed achievable.

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Section: Hv Device Imentioning

confidence: 99%

Gallium Nitride Power Devices in Power Electronics Applications: State of Art and Perspectives

Musumeci

Barba

2023

Energies

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“…In Reference [76], cascode GaN HEMTs and a SiC Schottky diode were used to design a 150-200/120-380-V, 1-kW, 20-100-kHz, >96% efficiency converter for residential PV applications. The performances of cascode GaN HEMT and Si CoolMOS in an interleaved converter were compared in Reference [77] for efficiency assessment. A 200/400-V, 20-220-kHz converter was designed for this evaluation.…”

Section: Isolated Dc-dc Convertersmentioning

confidence: 99%

Review of GaN HEMT Applications in Power Converters over 500 W

2019

Electronics

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Because of the global trends of energy demand increase and decarbonization, developing green energy sources and increasing energy conversion efficiency are recently two of the most urgent topics in energy fields. The requirements for power level and performance of converter systems are continuously growing for the fast development of modern technologies such as the Internet of things (IoT) and Industry 4.0. In this regard, power switching devices based on wide-bandgap (WBG) materials such as silicon carbide (SiC) and gallium nitride (GaN) are fast maturing and expected to greatly benefit power converters with complex switching schemes. In low- and medium-voltage applications, GaN-based high-electron-mobility transistors (HEMTs) are superior to conventional silicon (Si)-based devices in terms of switching frequency, power rating, thermal capability, and efficiency, which are crucial factors to enhance the performance of advanced power converters. Previously published review papers on GaN HEMT technology mainly focused on fabrication, device characteristics, and general applications. To realize the future development trend and potential of applying GaN technology in various converter designs, this paper reviews a total of 162 research papers focusing on GaN HEMT applications in mid- to high-power (over 500 W) converters. Different types of converters including direct current (DC)–DC, alternating current (AC)–DC, and DC–AC conversions with various configurations, switching frequencies, power densities, and system efficiencies are reviewed.

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“…As a result, the wide bandgap characteristics allow SIC and GAN power devices to operate under much higher temperature conditions than Si power devices. [4] The GAN power device in the converter offers better performance, lower switching loss, and more energy efficiency than the conventional interleaved boost converter with Si devices [9].…”

Section: Introductionmentioning

confidence: 99%