2011
DOI: 10.7567/jjap.50.05fb13
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Effects of Ga Doping and Substrate Temperature on Electrical Properties of ZnO Transparent Conducting Films Grown by Plasma-Assisted Deposition

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Cited by 4 publications
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“…At first, a 150-nm-thick polycrystalline ZnO layer was prepared on SiO 2 (fused silica glass) substrates by metalorganic chemical vapor deposition (MOCVD) 18) or molecular beam epitaxy (MBE). 19,20) These techniques provide device-grade ZnO 18,19,[21][22][23][24][25][26][27][28] and thus ensure to minimize the interfering effects of ZnO quality, such as crystallinity or impurity incorporation. Deposition temperatures of MOCVD-and MBE-ZnO were 400 °C and room temperature, respectively.…”
Section: Methodsmentioning
confidence: 99%
“…At first, a 150-nm-thick polycrystalline ZnO layer was prepared on SiO 2 (fused silica glass) substrates by metalorganic chemical vapor deposition (MOCVD) 18) or molecular beam epitaxy (MBE). 19,20) These techniques provide device-grade ZnO 18,19,[21][22][23][24][25][26][27][28] and thus ensure to minimize the interfering effects of ZnO quality, such as crystallinity or impurity incorporation. Deposition temperatures of MOCVD-and MBE-ZnO were 400 °C and room temperature, respectively.…”
Section: Methodsmentioning
confidence: 99%