Tailoring the resonance wavelength and loss of highly Ga doped ZnO plasmonic materials by varied doping content and substrate temperature

Zhu, Cheng‐Ye; Li, Jia; Yang, Ye; Lan, Pinjun; Huang, Jinhua; Lu, Yuehui; Tan, Ruiqin; Dai, Ning; Song, Weijie

doi:10.1016/j.tsf.2015.11.005

Cited by 13 publications

(6 citation statements)

References 46 publications

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“…In conclusion, the DIBS-grown high-quality GZO thin films deposited on Si substrates at varying growth temperatures ranging from 200 to 600 °C are reported. The structural and electrical characteristics of the films confirm the suitability of samples grown at 200 and 300 °C for plasmonics applications, having high carrier concentration (∼10 20 ) and low resistivity. Further, the successful realization of plasmon generation in the GZO thin film with the application of the secondary ion source is demonstrated.…”

Section: ■ Conclusionsupporting

confidence: 58%

“…3 Among these heavily doped semiconductors, the high solubility limit and high doping efficiency of Ga in the ZnO lattice without severe lattice distortion make GZO the best candidate as a plasmonic material in the NIR region. 3,20 Few demonstrations of using TCO as a plasmonic material in semiconductor plasmonic modulators, plasmonic quantum dots, and epsilon near-zero (|ε| ≪ 1) devices are reported. 3,15,21−23 Moreover, the typical carrier concentration in TCOs is relatively low, when compared to those for noble metals, leading to the generation of the plasmon in the nearinfrared (NIR) region.…”

Section: ■ Introductionmentioning

confidence: 99%

“…Several studies are going on to investigate the optical behavior of different alternative plasmonic materials, and various reports have been published worldwide on materials such as metal alloys, transition metal nitrides, and heavily doped semiconductors. − Recent studies on different transparent conducting oxides (TCOs), such as ZnO:Al(AZO), ITO, ZnO:Ga, etc., have reported metallic behavior and small losses as compared to those for noble metals, making TCOs appropriate candidates for plasmonic materials . Among these heavily doped semiconductors, the high solubility limit and high doping efficiency of Ga in the ZnO lattice without severe lattice distortion make GZO the best candidate as a plasmonic material in the NIR region. , Few demonstrations of using TCO as a plasmonic material in semiconductor plasmonic modulators, plasmonic quantum dots, and epsilon near-zero (|ε| ≪ 1) devices are reported. ,,− Moreover, the typical carrier concentration in TCOs is relatively low, when compared to those for noble metals, leading to the generation of the plasmon in the near-infrared (NIR) region . However, the region of interest in photovoltaic and photodetector devices is the ultraviolet (UV)–visible–infrared (IR) region.…”

Section: Introductionmentioning

confidence: 99%

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Investigation of Dual-Ion Beam Sputter-Instigated Plasmon Generation in TCOs: A Case Study of GZO

Garg

Awasthi

Kumar

et al. 2018

ACS Appl. Mater. Interfaces

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The use of the high free-electron concentration in heavily doped semiconductor enables the realization of plasmons. We report a novel approach to generate plasmons in Ga:ZnO (GZO) thin films in the wide spectral range of ∼1.87-10.04 eV. In the grown GZO thin films, dual-ion beam sputtering (DIBS) instigated plasmon is observed because of the formation of different metallic nanoclusters are reported. Moreover, formation of the nanoclusters and generation of plasmons are verified by field emission scanning electron microscope, electron energy loss spectra obtained by ultraviolet photoelectron spectroscopy, and spectroscopic ellipsometry analysis. Moreover, the calculation of valence bulk, valence surface, and particle plasmon resonance energies are performed, and indexing of each plasmon peaks with corresponding plasmon energy peak of the different nanoclusters is carried out. Further, the use of DIBS-instigated plasmon-enhanced GZO can be a novel mean to improve the performance of photovoltaic, photodetector, and sensing devices.

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Section: ■ Conclusionsupporting

confidence: 58%

Section: ■ Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Investigation of Dual-Ion Beam Sputter-Instigated Plasmon Generation in TCOs: A Case Study of GZO

Garg

Awasthi

Kumar

et al. 2018

ACS Appl. Mater. Interfaces

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“…The optical constants used to describe the intrinsic and unannealed Ga‐doped ZnO substrate were extracted from ellipsometry measurements, published in the Supporting Information of reference [ 40 ] and also presented for the as‐implanted Ga‐doped ZnO in the Section S5, Supporting Information . To quantitatively study the optical properties, i.e., the complex refractive index, of the heavily doped ZnO, we built a two‐layer optical model to fit our reflectance measurements: a semi‐infinite substrate of intrinsic ZnO and a top layer of highly doped ZnO:Ga, for which the optical properties can be well described using Drude‐Lorentz oscillation functions [ 43–47 ]

ε false(ω false) = ε_{normalD} false(ω false) + ε_{Ph} false(ω false) = ε_{\infty} - \frac{ω_{normalp}^{2}}{false(ω^{2} + i Γ_{normalD} ω false)} + Δ ε_{1} \times \frac{(ω_{Ph}^{2} - i γ^{*} ω)}{false(ω_{Ph}^{2} - ω^{2} - 2 i ω Γ_{Ph} false)}

…”

Section: Resultsmentioning

confidence: 99%

Heavily Doped Zinc Oxide with Plasma Frequencies in the Telecommunication Wavelength Range

Koch

Mei

Hafermann

et al. 2022

Advanced Photonics Research

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Heavy and hyper doping of ZnO by a combination of gallium (Ga) ion implantation using a focused ion beam (FIB) system and post‐implantation laser annealing is demonstrated. Ion implantation allows for the incorporation of impurities with nearly arbitrary concentrations, and the laser‐annealing process enables dopant activation close to or beyond the solid‐solubility limit of Ga in ZnO. Heavily doped ZnO:Ga with free‐carrier concentrations of ≈1021 cm−3, resulting in a plasma wavelength of 1.02 μm, which is substantially shorter than the telecommunication wavelength of 1.55 μm is demonstrated. Thus, this approach enables the control of the plasma frequency of ZnO from the far infrared down to 1.02 μm, thus, providing a promising plasmonic material for applications in this regime.

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“…The diffraction angle of (002) peak gets shifted from 35.16° to 34.98°. [19,20] Figure 2b shows room-temperature transmittance of the MgZnO/Au/ ZnO SSPD, presenting a steep cut edge and high transmittance of about 80% at wavelengths above 400 nm. The bandgap of ZnO and MgZnO thin films was calculated to be 3.5 and 4.5 eV, respectively, as shown in the illustrations.…”

Section: Resultsmentioning

confidence: 99%

Avalanche Effect and High External Quantum Efficiency in MgZnO/Au/ZnO Sandwich Structure Photodetector

Zhao

Jiang

Zhao

et al. 2021

Advanced Optical Materials

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MSM structure is widely applied to PD owing to its relatively simple preparation methods, short response time, and more effective light collecting area. However, MSM PD poses significant challenges that are mainly related to the external quantum efficiency (EQE) and weak light detection, owing to the optical loss of incident light by electrode shielding and the necessity of applying a bias voltage for device operation. To increase the EQE of PDs and probe weak signals, extensive research efforts have been devoted to the study on EQE of MSM PD in recent years. The research on avalanche effect has received extensive attention owing to its excellent low-light detection capability. [11][12][13][14] Under normal conditions, the avalanche effect is usually realized by p-n or p-i-n photodiodes because of the realization of collision ionization requiring absorption area, transition area, and multiplication area. Therefore, achievement of the avalanche effect in the MgZnO-based MSM PDs still faces many difficulties and challenges. The only MgZnO-based avalanche photodetector (APD) with MSM structure was achieved using MgO as the multiplication area. [8] Herein, MgZnO/Au/ZnO sandwich structure PD (SSPD) based on MSM structure was proposed. Using the particularity of the sandwich structure, the avalanche effect was successfully achieved, while simultaneously improving the EQE of the PD. High EQE of the SSPD comes from the interface defect between ZnO and MgZnO. The existence of defects destroys the periodic potential field generated by the atoms strictly arranged periodically; thus, the energy level that allows electrons to be introduced into the forbidden band of semiconductor is formed. These defect energy levels freely exchange electrons with the conduction band to act as traps. [15] These traps then produce the photoconductive (PC) gain, which is attributed to the capture of holes by the traps at the interface in SSPD. [16] The avalanche effect of SSPD originates from the collision ionization process that occurs inside the MgZnO film. SSPD forms a channel owing to the contact between ZnO and MgZnO. The channel in the MgZnO layer is far away from the defect concentration, which provides a powerful condition for collision ionization. Sandwich structure easily achieves the avalanche effect compared to MSM structure.In this study, MgZnO/Au/ZnO SSPD with a low dark current was successfully fabricated. Under the 275 nm

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Tailoring the resonance wavelength and loss of highly Ga doped ZnO plasmonic materials by varied doping content and substrate temperature

Cited by 13 publications

References 46 publications

Investigation of Dual-Ion Beam Sputter-Instigated Plasmon Generation in TCOs: A Case Study of GZO

Investigation of Dual-Ion Beam Sputter-Instigated Plasmon Generation in TCOs: A Case Study of GZO

Heavily Doped Zinc Oxide with Plasma Frequencies in the Telecommunication Wavelength Range

Avalanche Effect and High External Quantum Efficiency in MgZnO/Au/ZnO Sandwich Structure Photodetector

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