Effects of Ga Doping and Substrate Temperature on Electrical Properties of ZnO Transparent Conducting Films Grown by Plasma-Assisted Deposition

Abstract

Transparent conducting ZnO films are deposited by plasma-assisted deposition on glass and plastic substrates at temperatures as low as 50 °C. The effects of Ga doping and growth temperature on electrical properties are studied using Hall measurement and X-ray diffraction. Carrier density increases with Ga doping for both 50 and 300 °C growth. For low-temperature growth, the carrier mobility in undoped ZnO films is the same as that in high-temperature-grown films, but it becomes lower as the Ga doping level becomes higher. Lattice expansion in both c and a axes directions is observed for low-temperature-grown highly Ga-doped films. The relation between the mobility reduction and the lattice expansion is discussed.

Room-Temperature Formation of a ZnO-Based Adhesion Layer for Nanoprecision Cu/Glass Metallization

“…Recently, ZnO has gained considerable attention in microelectronics as an alternative transparent conductor, 7,8) because Zn is a recyclable, abundant, and affordable element. ZnO can be deposited by various techniques such as sputtering, 9,10) sol-gel, 11) chemical vapor deposition, 12,13) and supercritical fluid chemical deposition.…”