2011
DOI: 10.1143/jjap.50.05fb13
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Effects of Ga Doping and Substrate Temperature on Electrical Properties of ZnO Transparent Conducting Films Grown by Plasma-Assisted Deposition

Abstract: Transparent conducting ZnO films are deposited by plasma-assisted deposition on glass and plastic substrates at temperatures as low as 50 °C. The effects of Ga doping and growth temperature on electrical properties are studied using Hall measurement and X-ray diffraction. Carrier density increases with Ga doping for both 50 and 300 °C growth. For low-temperature growth, the carrier mobility in undoped ZnO films is the same as that in high-temperature-grown films, but it becomes lower as the Ga doping level bec… Show more

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Cited by 2 publications
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“…Recently, ZnO has gained considerable attention in microelectronics as an alternative transparent conductor, 7,8) because Zn is a recyclable, abundant, and affordable element. ZnO can be deposited by various techniques such as sputtering, 9,10) sol-gel, 11) chemical vapor deposition, 12,13) and supercritical fluid chemical deposition.…”
Section: Introductionmentioning
confidence: 99%
“…Recently, ZnO has gained considerable attention in microelectronics as an alternative transparent conductor, 7,8) because Zn is a recyclable, abundant, and affordable element. ZnO can be deposited by various techniques such as sputtering, 9,10) sol-gel, 11) chemical vapor deposition, 12,13) and supercritical fluid chemical deposition.…”
Section: Introductionmentioning
confidence: 99%