Effects of electron-impurity scattering on density of states in silicene: Impurity bands and band-gap narrowing

Liu, S. Y.; Zeng, Yangsu; Lei, X. L.

doi:10.1103/physrevb.94.235308

Cited by 3 publications

(1 citation statement)

References 72 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The doping or functionalization of graphene was reported to enhance the capacitance considerably. Inspired by graphene, silicene which is made of two-dimensional layered nanosheets has been developed. − Through experiments, silicene sheets with different superstructures have been successfully synthesized on various substrates via epitaxial growth on the Ag(111), ZrB 2 (0001), and MoS 2 surfaces. Silicene with a buckled layer structure has high surface area .…”

Section: Introductionmentioning

confidence: 99%

Quantum Capacitance of Silicene-Based Electrodes from First-Principles Calculations

Yang

Fan

et al. 2018

J. Phys. Chem. C

View full text Add to dashboard Cite

Silicene with a buckled atomic layer has double surfaces with a high surface/volume ratio similar to nanocarbon materials and is expected to have potential applications for supercapacitors. With first-principles calculations, it is found that introduction of vacancy defects with the doping in silicene can enhance the quantum capacitance of silicene-based electrodes. The enhancement of quantum capacitance is attributed to the presence of localized states around the Fermi level. Furthermore, the quantum capacitance is observed to increase with the increase of the defect’s concentration. It is also observed that the localized states around the Fermi level lead to spin polarization in the cases of B-doping and S-doping near the vacancies.

show abstract